DE3032461A1 - Verfahren zum herstellen von legierten metallkontaktschichten auf kristallorientierten halbleiteroberflaechen mittels energiepulsbestrahlung - Google Patents

Verfahren zum herstellen von legierten metallkontaktschichten auf kristallorientierten halbleiteroberflaechen mittels energiepulsbestrahlung

Info

Publication number
DE3032461A1
DE3032461A1 DE19803032461 DE3032461A DE3032461A1 DE 3032461 A1 DE3032461 A1 DE 3032461A1 DE 19803032461 DE19803032461 DE 19803032461 DE 3032461 A DE3032461 A DE 3032461A DE 3032461 A1 DE3032461 A1 DE 3032461A1
Authority
DE
Germany
Prior art keywords
oriented
alloyed
metal contact
semiconductor
laser light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19803032461
Other languages
German (de)
English (en)
Other versions
DE3032461C2 (enrdf_load_stackoverflow
Inventor
Eberhard F. Dipl.-Phys. Dr. 8023 Pullach Krimmel
Hubert Dr.-Ing. 8000 München Patalong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Priority to DE19803032461 priority Critical patent/DE3032461A1/de
Priority to US06/289,880 priority patent/US4359486A/en
Priority to EP81106341A priority patent/EP0046914B1/de
Priority to JP56132549A priority patent/JPS5772322A/ja
Publication of DE3032461A1 publication Critical patent/DE3032461A1/de
Application granted granted Critical
Publication of DE3032461C2 publication Critical patent/DE3032461C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Thyristors (AREA)
DE19803032461 1980-08-28 1980-08-28 Verfahren zum herstellen von legierten metallkontaktschichten auf kristallorientierten halbleiteroberflaechen mittels energiepulsbestrahlung Granted DE3032461A1 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE19803032461 DE3032461A1 (de) 1980-08-28 1980-08-28 Verfahren zum herstellen von legierten metallkontaktschichten auf kristallorientierten halbleiteroberflaechen mittels energiepulsbestrahlung
US06/289,880 US4359486A (en) 1980-08-28 1981-08-04 Method of producing alloyed metal contact layers on crystal-orientated semiconductor surfaces by energy pulse irradiation
EP81106341A EP0046914B1 (de) 1980-08-28 1981-08-14 Verfahren zum Herstellen von legierten Metallkontaktschichten auf kristallorientierten Halbleiteroberflächen mittels Energiepulsbestrahlung
JP56132549A JPS5772322A (en) 1980-08-28 1981-08-24 Method of generating alloyed metallic contact layer to surface of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19803032461 DE3032461A1 (de) 1980-08-28 1980-08-28 Verfahren zum herstellen von legierten metallkontaktschichten auf kristallorientierten halbleiteroberflaechen mittels energiepulsbestrahlung

Publications (2)

Publication Number Publication Date
DE3032461A1 true DE3032461A1 (de) 1982-04-01
DE3032461C2 DE3032461C2 (enrdf_load_stackoverflow) 1989-04-13

Family

ID=6110613

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19803032461 Granted DE3032461A1 (de) 1980-08-28 1980-08-28 Verfahren zum herstellen von legierten metallkontaktschichten auf kristallorientierten halbleiteroberflaechen mittels energiepulsbestrahlung

Country Status (2)

Country Link
JP (1) JPS5772322A (enrdf_load_stackoverflow)
DE (1) DE3032461A1 (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003282478A (ja) 2002-01-17 2003-10-03 Sony Corp 合金化方法及び配線形成方法、表示素子の形成方法、画像表示装置の製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1540991A1 (de) * 1964-11-19 1970-02-19 Philips Nv Verfahren zur Herstellung eines Koerpers mit einem UEbergang zwischen zwei verschiedenen Materialien,insbesondere Halbleitermaterialien und durch dieses Verfahren hergestellte Koerper
DE1514288B2 (de) * 1964-12-11 1974-10-31 N.V. Philips' Gloeilampenfabrieken, Eindhoven (Niederlande) Verfahren zum Befestigen eines Halbleiterkörpers an einer Trägerplatte
US4059461A (en) * 1975-12-10 1977-11-22 Massachusetts Institute Of Technology Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof
DE2625917B2 (de) * 1975-06-19 1979-04-12 Asea Ab, Vaesteraas (Schweden) Halbleiteranordnung
DE2825212B1 (de) * 1978-06-08 1979-07-12 Siemens Ag Verfahren zur Herstellung von Halbleiterbauelementen mittels eines kurzen,intensiven Laserlichtpulses
GB2035690A (en) * 1978-11-17 1980-06-18 Keller R Semiconductor device and a method of contacting a partial region of a semiconductor surface

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51111061A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Electrode forming method
JPS5723223A (en) * 1980-07-18 1982-02-06 Fujitsu Ltd Manufacture of compound semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1540991A1 (de) * 1964-11-19 1970-02-19 Philips Nv Verfahren zur Herstellung eines Koerpers mit einem UEbergang zwischen zwei verschiedenen Materialien,insbesondere Halbleitermaterialien und durch dieses Verfahren hergestellte Koerper
DE1514288B2 (de) * 1964-12-11 1974-10-31 N.V. Philips' Gloeilampenfabrieken, Eindhoven (Niederlande) Verfahren zum Befestigen eines Halbleiterkörpers an einer Trägerplatte
DE2625917B2 (de) * 1975-06-19 1979-04-12 Asea Ab, Vaesteraas (Schweden) Halbleiteranordnung
US4059461A (en) * 1975-12-10 1977-11-22 Massachusetts Institute Of Technology Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof
DE2825212B1 (de) * 1978-06-08 1979-07-12 Siemens Ag Verfahren zur Herstellung von Halbleiterbauelementen mittels eines kurzen,intensiven Laserlichtpulses
GB2035690A (en) * 1978-11-17 1980-06-18 Keller R Semiconductor device and a method of contacting a partial region of a semiconductor surface

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
US-Z.: IEEE Journal of Solid-State Circuits, Vol. SC-10, Nr. 4, August 1974, S. 219-228 *

Also Published As

Publication number Publication date
JPS5772322A (en) 1982-05-06
DE3032461C2 (enrdf_load_stackoverflow) 1989-04-13

Similar Documents

Publication Publication Date Title
EP0046914B1 (de) Verfahren zum Herstellen von legierten Metallkontaktschichten auf kristallorientierten Halbleiteroberflächen mittels Energiepulsbestrahlung
DE1933690C3 (de) Verfahren zum Herstellen eines mindestens bereichsweise einkristallinen Films auf einem Substrat
DE68910864T2 (de) Selektive Plattierung durch Abtragen mittels eines Lasers.
DE69032824T2 (de) Verfahren zum Laseraufdampfen
DE2412102C2 (de) Verfahren und Vorrichtung zum Herstellen einer dotierten Halbleiterzone und einer ohmschen Kontaktdoppelschicht hierauf
DE3541587C2 (de) Verfahren zur Herstellung eines dünnen Halbleiterfilms
DE10205323B4 (de) Verfahren zur Herstellung eines Halbleiterbauelements
DE112019006396B4 (de) Freistehendes polykristallines diamantsubstrat und verfahren zur herstellung desselben
DE3731742A1 (de) Silizium-auf-isolator-halbleiterbauelement und verfahren zum herstellen des bauelements
DE2258444A1 (de) Verfahren und herstellung von elektrischisolierenden zonen in optischen bauelementen
DE102004030268A1 (de) Verfahren zum Herstellen eines Halbleiterelements
DE69225881T2 (de) Verfahren zur Herstellung eines Substrates vom SOI-Typ mit einer uniformen dünnen Silizium-Schicht
DE112011100451T5 (de) Verfahren zur Herstellung einer Halbleitervorrichtung und Vorrichtung zur Herstellung einer Halbleitervorrichtung
DE1544275C3 (de) Verfahren zur Ausbildung von Zonen unterschiedlicher Leitfähigkeit in Halbleiterkristallen durch Ionenimplantation
DE2917654A1 (de) Anordnung und verfahren zum selektiven, elektrochemischen aetzen
DE3240162C2 (de) Verfahren zum Herstellen eines doppelt-diffundierten Leistungs-MOSFET mit Source-Basis-Kurzschluß
DE3123949A1 (de) Verfahren zur herstellung von halbleiteranordnungen durch ionenimplantation
DE3217026A1 (de) Halbleitervorrichtung
DE3032461A1 (de) Verfahren zum herstellen von legierten metallkontaktschichten auf kristallorientierten halbleiteroberflaechen mittels energiepulsbestrahlung
DE1963131A1 (de) Verfahren zur Herstellung von Halbleiterelementen
DE19633183A1 (de) Halbleiterbauelement mit durch Ionenimplantation eingebrachten Fremdatomen und Verfahren zu dessen Herstellung
DE2837750A1 (de) Verfahhren zum herstellen von halbleiterbauelementen
DE2731221A1 (de) Verfahren zum herstellen von halbleiterkoerpern
DE19825635C1 (de) Verfahren zur Herstellung polykristalliner Siliciumdünnschichten für mikroelektronische Bauelemente, insbesondere Dünnschichttransistoren, auf Glassubstraten
DE3824127C2 (de) Vorrichtung zur Wärmebehandlung der Oberfläche eines Substrates, insbesondere zum Kristallisieren von polykristallinem oder amorphem Substratmaterial

Legal Events

Date Code Title Description
AG Has addition no.

Ref country code: DE

Ref document number: 3045784

Format of ref document f/p: P

OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
AG Has addition no.

Ref country code: DE

Ref document number: 3045784

Format of ref document f/p: P

8110 Request for examination paragraph 44
AG Has addition no.

Ref country code: DE

Ref document number: 3045784

Format of ref document f/p: P

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee