DE3024939C3 - Halbleiteranordnung - Google Patents

Halbleiteranordnung

Info

Publication number
DE3024939C3
DE3024939C3 DE3024939A DE3024939A DE3024939C3 DE 3024939 C3 DE3024939 C3 DE 3024939C3 DE 3024939 A DE3024939 A DE 3024939A DE 3024939 A DE3024939 A DE 3024939A DE 3024939 C3 DE3024939 C3 DE 3024939C3
Authority
DE
Germany
Prior art keywords
pair
semiconductor substrate
main
semiconductor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3024939A
Other languages
German (de)
English (en)
Other versions
DE3024939A1 (de
DE3024939C2 (Sortimente
Inventor
Atsuo Watanabe
Masayoshi Naito
Tsutomu Yatsuo
Masahiro Okamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP8265079A external-priority patent/JPS567475A/ja
Priority claimed from JP8499679A external-priority patent/JPS5610968A/ja
Priority claimed from JP2664380A external-priority patent/JPS56124265A/ja
Priority claimed from JP2664280A external-priority patent/JPS56124264A/ja
Priority claimed from JP2663880A external-priority patent/JPS56124263A/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE3024939A1 publication Critical patent/DE3024939A1/de
Application granted granted Critical
Publication of DE3024939C3 publication Critical patent/DE3024939C3/de
Publication of DE3024939C2 publication Critical patent/DE3024939C2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/118—Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers

Landscapes

  • Thyristors (AREA)
DE3024939A 1979-07-02 1980-07-01 Halbleiteranordnung Expired - Fee Related DE3024939C3 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP8265079A JPS567475A (en) 1979-07-02 1979-07-02 Semiconductor device
JP8499679A JPS5610968A (en) 1979-07-06 1979-07-06 Semiconductor device
JP2664380A JPS56124265A (en) 1980-03-05 1980-03-05 Semiconductor device
JP2664280A JPS56124264A (en) 1980-03-05 1980-03-05 Semiconductor device
JP2663880A JPS56124263A (en) 1980-03-05 1980-03-05 Semiconductor device

Publications (3)

Publication Number Publication Date
DE3024939A1 DE3024939A1 (de) 1981-01-15
DE3024939C3 true DE3024939C3 (de) 1994-08-11
DE3024939C2 DE3024939C2 (Sortimente) 1994-08-11

Family

ID=27520862

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3024939A Expired - Fee Related DE3024939C3 (de) 1979-07-02 1980-07-01 Halbleiteranordnung

Country Status (2)

Country Link
US (1) US4388635A (Sortimente)
DE (1) DE3024939C3 (Sortimente)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60250670A (ja) * 1984-05-25 1985-12-11 Mitsubishi Electric Corp 半導体装置
DE3867371D1 (en) * 1987-08-11 1992-02-13 Bbc Brown Boveri & Cie Gate-turn-off-thyristor.
JPH07118534B2 (ja) * 1990-02-22 1995-12-18 三菱電機株式会社 半導体装置の製造方法
EP0519741B1 (en) * 1991-06-21 1997-05-02 Kabushiki Kaisha Toshiba High-breakdown-voltage semiconductor element
US5371386A (en) * 1992-04-28 1994-12-06 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of assembling the same
DE4309763C1 (de) * 1993-03-25 1994-05-05 Siemens Ag GTO-Thyristor
DE4410354C2 (de) * 1994-03-25 1996-02-15 Semikron Elektronik Gmbh Leistungshalbleiterbauelement
US5453396A (en) * 1994-05-31 1995-09-26 Micron Technology, Inc. Sub-micron diffusion area isolation with SI-SEG for a DRAM array
JP3058456B2 (ja) * 1996-09-24 2000-07-04 三菱電機株式会社 半導体装置およびその製造方法
EP2447988B1 (en) * 2010-11-02 2015-05-06 GE Energy Power Conversion Technology Limited Power electronic device with edge passivation
DE102014103448B4 (de) 2013-03-15 2020-07-30 Infineon Technologies Austria Ag Metallabscheidung auf Halbleiterwafern
CN105474400B (zh) * 2013-08-28 2019-11-15 Abb瑞士股份有限公司 双极非穿通功率半导体装置
JP6833864B2 (ja) * 2015-11-05 2021-02-24 アーベーベー・シュバイツ・アーゲーＡＢＢ Ｓｃｈｗｅｉｚ ＡＧ パワー半導体装置およびパワー半導体装置を作製するための方法
CN107680907B (zh) * 2016-08-01 2020-04-17 株洲中车时代电气股份有限公司 快恢复二极管制作方法及由该方法制作的快恢复二极管
DE112018001239B4 (de) 2017-03-08 2025-03-06 Mitsubishi Electric Corporation Halbleiterbauelement, verfahren zur herstellung desselben und halbleitermodul

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA941074A (en) * 1964-04-16 1974-01-29 Northern Electric Company Limited Semiconductor devices with field electrodes
US3413527A (en) * 1964-10-02 1968-11-26 Gen Electric Conductive electrode for reducing the electric field in the region of the junction of a junction semiconductor device
DE1539877A1 (de) * 1965-11-19 1969-12-11 Itt Ind Gmbh Deutsche Schaltbares Halbleiterbauelement
IT951158B (it) * 1971-06-23 1973-06-30 Rca Corp Dispositivo semiconduttore presen tante giunzioni stabili per alte tensioni
US3783348A (en) * 1972-10-30 1974-01-01 Rca Corp Encapsulated semiconductor device assembly
US4110780A (en) * 1973-07-06 1978-08-29 Bbc Brown Boveri & Company, Limited Semiconductor power component
US4329707A (en) * 1978-09-15 1982-05-11 Westinghouse Electric Corp. Glass-sealed power thyristor
US4261001A (en) * 1980-05-23 1981-04-07 General Electric Company Partially isolated amplifying gate thyristor with controllable dv/dt compensation, high di/dt capability, and high sensitivity

Also Published As

Publication number Publication date
DE3024939A1 (de) 1981-01-15
US4388635A (en) 1983-06-14
DE3024939C2 (Sortimente) 1994-08-11

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Legal Events

Date Code Title Description
OAP Request for examination filed
OD Request for examination
8125 Change of the main classification

Ipc: H01L 29/40

D2 Grant after examination
8363 Opposition against the patent
8325 Change of the main classification

Ipc: H01L 29/40

8366 Restricted maintained after opposition proceedings
8305 Restricted maintenance of patent after opposition
D4 Patent maintained restricted
8339 Ceased/non-payment of the annual fee