DE2951349A1 - Naphthalintetracarbonsaeurediimide als elektrische halbleiter und photoleiter - Google Patents

Naphthalintetracarbonsaeurediimide als elektrische halbleiter und photoleiter

Info

Publication number
DE2951349A1
DE2951349A1 DE19792951349 DE2951349A DE2951349A1 DE 2951349 A1 DE2951349 A1 DE 2951349A1 DE 19792951349 DE19792951349 DE 19792951349 DE 2951349 A DE2951349 A DE 2951349A DE 2951349 A1 DE2951349 A1 DE 2951349A1
Authority
DE
Germany
Prior art keywords
hydrogen
naphthalintetracarbonsaeurediimides
ladders
photo
semiconductors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19792951349
Other languages
German (de)
English (en)
Inventor
Hans-Georg Dr. 5068 Odenthal Fitzky
Jürgen Dr. 5060 Bergisch-Gladbach Hocker
Rudolf Dr. 5090 Leverkusen Merten
Hans-Klaus Dr. 5060 Bergisch-Gladbach Müller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bayer AG
Original Assignee
Bayer AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bayer AG filed Critical Bayer AG
Priority to DE19792951349 priority Critical patent/DE2951349A1/de
Priority to EP80107719A priority patent/EP0031065B1/de
Priority to DE8080107719T priority patent/DE3065326D1/de
Priority to JP17731280A priority patent/JPS5695241A/ja
Publication of DE2951349A1 publication Critical patent/DE2951349A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/06—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being organic
    • G03G5/0622—Heterocyclic compounds
    • G03G5/0644—Heterocyclic compounds containing two or more hetero rings
    • G03G5/0646—Heterocyclic compounds containing two or more hetero rings in the same ring system
    • G03G5/0651—Heterocyclic compounds containing two or more hetero rings in the same ring system containing four relevant rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
  • Photoreceptors In Electrophotography (AREA)
DE19792951349 1979-12-20 1979-12-20 Naphthalintetracarbonsaeurediimide als elektrische halbleiter und photoleiter Withdrawn DE2951349A1 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE19792951349 DE2951349A1 (de) 1979-12-20 1979-12-20 Naphthalintetracarbonsaeurediimide als elektrische halbleiter und photoleiter
EP80107719A EP0031065B1 (de) 1979-12-20 1980-12-08 Naphthalintetracarbonsäurediimide als elektrische Halbleiter und Photoleiter
DE8080107719T DE3065326D1 (en) 1979-12-20 1980-12-08 Naphthaline-tetracarbonic acid diimides as electrical semiconductors and photoconductors
JP17731280A JPS5695241A (en) 1979-12-20 1980-12-17 Naphthalene tetracarbonic acid diimide as semicondctor and photoconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19792951349 DE2951349A1 (de) 1979-12-20 1979-12-20 Naphthalintetracarbonsaeurediimide als elektrische halbleiter und photoleiter

Publications (1)

Publication Number Publication Date
DE2951349A1 true DE2951349A1 (de) 1981-07-02

Family

ID=6089043

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19792951349 Withdrawn DE2951349A1 (de) 1979-12-20 1979-12-20 Naphthalintetracarbonsaeurediimide als elektrische halbleiter und photoleiter
DE8080107719T Expired DE3065326D1 (en) 1979-12-20 1980-12-08 Naphthaline-tetracarbonic acid diimides as electrical semiconductors and photoconductors

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE8080107719T Expired DE3065326D1 (en) 1979-12-20 1980-12-08 Naphthaline-tetracarbonic acid diimides as electrical semiconductors and photoconductors

Country Status (3)

Country Link
EP (1) EP0031065B1 (enExample)
JP (1) JPS5695241A (enExample)
DE (2) DE2951349A1 (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0224779A1 (de) * 1985-11-30 1987-06-10 Bayer Ag Radikalanionensalze von Derivaten der 1.4.5.8-Naphthalin-tetracarbonsäure, Verfahren zu ihrer Herstellung und ihre Verwendung
US7569693B2 (en) 2006-06-12 2009-08-04 Northwestern University Naphthalene-based semiconductor materials and methods of preparing and use thereof
US7671202B2 (en) 2004-01-26 2010-03-02 Northwestern University Perylene n-type semiconductors and related devices
US7893265B2 (en) 2007-01-08 2011-02-22 Polyera Corporation Methods for preparing arene-BIS (dicarboximide)-based semiconducting materials and related intermediates for preparing same
US7902363B2 (en) 2006-11-17 2011-03-08 Polyera Corporation Diimide-based semiconductor materials and methods of preparing and using the same
US7947837B2 (en) 2006-10-25 2011-05-24 Polyera Corporation Organic semiconductor materials and methods of preparing and use thereof
US8022214B2 (en) 2007-01-24 2011-09-20 Polyera Corporation Organic semiconductor materials and precursors thereof

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02244058A (ja) * 1988-10-05 1990-09-28 Minolta Camera Co Ltd 感光体
JPH02305886A (ja) * 1989-05-19 1990-12-19 Nec Corp 有機薄膜ｅｌ素子
JPH0380887A (ja) * 1989-08-23 1991-04-05 Akira Ishikawa 敷ぶとんの製造方法
US5468583A (en) * 1994-12-28 1995-11-21 Eastman Kodak Company Cyclic bis-dicarboximide electron transport compounds for electrophotography
US20040116493A1 (en) * 2000-11-14 2004-06-17 Giichi Sugimori Anti-helicobacterial agents
WO2003095453A1 (en) * 2002-05-13 2003-11-20 Shionogi & Co., Ltd. Compounds against helicobacter activity
US7579619B2 (en) * 2005-04-20 2009-08-25 Eastman Kodak Company N,N′-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
US7629605B2 (en) 2005-10-31 2009-12-08 Eastman Kodak Company N-type semiconductor materials for thin film transistors
US7422777B2 (en) 2005-11-22 2008-09-09 Eastman Kodak Company N,N′-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
DE102005061997A1 (de) * 2005-12-23 2007-07-05 Basf Ag Naphthalintetracarbonsäurederivate und deren Verwendung
US7804087B2 (en) * 2006-12-07 2010-09-28 Eastman Kodak Company Configurationally controlled N,N'-Dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors
US7858970B2 (en) 2007-06-29 2010-12-28 Eastman Kodak Company Heterocycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors
JP5392461B2 (ja) * 2008-01-17 2014-01-22 株式会社リコー 電子写真装置
US8380109B2 (en) * 2008-01-11 2013-02-19 Ricoh Company, Ltd. Image forming apparatus and process cartridge
JP5733612B2 (ja) * 2011-03-08 2015-06-10 国立大学法人信州大学 有機半導体薄膜用材料、該材料を用いた有機半導体薄膜の形成方法および有機薄膜トランジスタ
KR102282494B1 (ko) 2014-08-28 2021-07-26 삼성전자주식회사 유기 광전 소자 및 이미지 센서

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1230031B (de) * 1964-06-05 1966-12-08 Bayer Ag Verfahren zur Herstellung von Derivaten des Naphthalin-1, 4, 5, 8-tetracarbonsaeurediimids
DE2059540C3 (de) * 1970-12-03 1985-05-15 Hoechst Ag, 6230 Frankfurt Elektrophotographisches Aufzeichnungsmaterial mit einer photoleitfähigen Schicht
DE2636421A1 (de) * 1976-08-13 1978-02-16 Basf Ag Elektrisch leitfaehige perylenderivate

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0224779A1 (de) * 1985-11-30 1987-06-10 Bayer Ag Radikalanionensalze von Derivaten der 1.4.5.8-Naphthalin-tetracarbonsäure, Verfahren zu ihrer Herstellung und ihre Verwendung
US4841073A (en) * 1985-11-30 1989-06-20 Bayer Aktiengesellschaft Radical anion salts of derivatives of 1,4,5,8-naphthalenetetracarboxylic acid and their use
US7671202B2 (en) 2004-01-26 2010-03-02 Northwestern University Perylene n-type semiconductors and related devices
US7982039B2 (en) 2004-01-26 2011-07-19 Northwestern University N-type semiconductors and related devices
US7569693B2 (en) 2006-06-12 2009-08-04 Northwestern University Naphthalene-based semiconductor materials and methods of preparing and use thereof
US7947837B2 (en) 2006-10-25 2011-05-24 Polyera Corporation Organic semiconductor materials and methods of preparing and use thereof
US7902363B2 (en) 2006-11-17 2011-03-08 Polyera Corporation Diimide-based semiconductor materials and methods of preparing and using the same
US7893265B2 (en) 2007-01-08 2011-02-22 Polyera Corporation Methods for preparing arene-BIS (dicarboximide)-based semiconducting materials and related intermediates for preparing same
US8022214B2 (en) 2007-01-24 2011-09-20 Polyera Corporation Organic semiconductor materials and precursors thereof

Also Published As

Publication number Publication date
EP0031065A3 (en) 1982-01-20
DE3065326D1 (en) 1983-11-17
JPS5695241A (en) 1981-08-01
EP0031065B1 (de) 1983-10-12
JPH0139098B2 (enExample) 1989-08-18
EP0031065A2 (de) 1981-07-01

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