JPH0139098B2 - - Google Patents

Info

Publication number
JPH0139098B2
JPH0139098B2 JP55177312A JP17731280A JPH0139098B2 JP H0139098 B2 JPH0139098 B2 JP H0139098B2 JP 55177312 A JP55177312 A JP 55177312A JP 17731280 A JP17731280 A JP 17731280A JP H0139098 B2 JPH0139098 B2 JP H0139098B2
Authority
JP
Japan
Prior art keywords
group
hydrogen
ohm
alkyl group
conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55177312A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5695241A (en
Inventor
Hotsukaa Yurugen
Meruten Ruudorufu
Georuku Fuitsuki Hansu
Kurausu Myuraa Hansu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bayer AG
Original Assignee
Bayer AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bayer AG filed Critical Bayer AG
Publication of JPS5695241A publication Critical patent/JPS5695241A/ja
Publication of JPH0139098B2 publication Critical patent/JPH0139098B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/06Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being organic
    • G03G5/0622Heterocyclic compounds
    • G03G5/0644Heterocyclic compounds containing two or more hetero rings
    • G03G5/0646Heterocyclic compounds containing two or more hetero rings in the same ring system
    • G03G5/0651Heterocyclic compounds containing two or more hetero rings in the same ring system containing four relevant rings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/111Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/615Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
  • Photoreceptors In Electrophotography (AREA)
JP17731280A 1979-12-20 1980-12-17 Naphthalene tetracarbonic acid diimide as semicondctor and photoconductor Granted JPS5695241A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19792951349 DE2951349A1 (de) 1979-12-20 1979-12-20 Naphthalintetracarbonsaeurediimide als elektrische halbleiter und photoleiter

Publications (2)

Publication Number Publication Date
JPS5695241A JPS5695241A (en) 1981-08-01
JPH0139098B2 true JPH0139098B2 (enExample) 1989-08-18

Family

ID=6089043

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17731280A Granted JPS5695241A (en) 1979-12-20 1980-12-17 Naphthalene tetracarbonic acid diimide as semicondctor and photoconductor

Country Status (3)

Country Link
EP (1) EP0031065B1 (enExample)
JP (1) JPS5695241A (enExample)
DE (2) DE2951349A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0380887A (ja) * 1989-08-23 1991-04-05 Akira Ishikawa 敷ぶとんの製造方法

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4841073A (en) * 1985-11-30 1989-06-20 Bayer Aktiengesellschaft Radical anion salts of derivatives of 1,4,5,8-naphthalenetetracarboxylic acid and their use
JPH02244058A (ja) * 1988-10-05 1990-09-28 Minolta Camera Co Ltd 感光体
JPH02305886A (ja) * 1989-05-19 1990-12-19 Nec Corp 有機薄膜el素子
US5468583A (en) * 1994-12-28 1995-11-21 Eastman Kodak Company Cyclic bis-dicarboximide electron transport compounds for electrophotography
US20040116493A1 (en) * 2000-11-14 2004-06-17 Giichi Sugimori Anti-helicobacterial agents
WO2003095453A1 (en) * 2002-05-13 2003-11-20 Shionogi & Co., Ltd. Compounds against helicobacter activity
JP4921982B2 (ja) 2004-01-26 2012-04-25 ノースウエスタン ユニバーシティ ペリレンn型半導体及び関連装置
US7579619B2 (en) * 2005-04-20 2009-08-25 Eastman Kodak Company N,N′-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
US7629605B2 (en) 2005-10-31 2009-12-08 Eastman Kodak Company N-type semiconductor materials for thin film transistors
US7422777B2 (en) 2005-11-22 2008-09-09 Eastman Kodak Company N,N′-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
DE102005061997A1 (de) * 2005-12-23 2007-07-05 Basf Ag Naphthalintetracarbonsäurederivate und deren Verwendung
WO2007146250A2 (en) * 2006-06-12 2007-12-21 Northwestern University Naphthalene-based semiconductor materials and methods of preparing and use thereof
US7947837B2 (en) 2006-10-25 2011-05-24 Polyera Corporation Organic semiconductor materials and methods of preparing and use thereof
JP5380296B2 (ja) 2006-11-17 2014-01-08 ポリエラ コーポレイション ジイミド系半導体材料ならびにジイミド系半導体材料を調製および使用する方法
US7804087B2 (en) * 2006-12-07 2010-09-28 Eastman Kodak Company Configurationally controlled N,N'-Dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors
EP2104676A2 (en) 2007-01-08 2009-09-30 Polyera Corporation Methods for preparing arene-bis(dicarboximide)-based semiconducting materials and related intermediates for preparing same
US8022214B2 (en) 2007-01-24 2011-09-20 Polyera Corporation Organic semiconductor materials and precursors thereof
US7858970B2 (en) 2007-06-29 2010-12-28 Eastman Kodak Company Heterocycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors
JP5392461B2 (ja) * 2008-01-17 2014-01-22 株式会社リコー 電子写真装置
US8380109B2 (en) * 2008-01-11 2013-02-19 Ricoh Company, Ltd. Image forming apparatus and process cartridge
JP5733612B2 (ja) * 2011-03-08 2015-06-10 国立大学法人信州大学 有機半導体薄膜用材料、該材料を用いた有機半導体薄膜の形成方法および有機薄膜トランジスタ
KR102282494B1 (ko) 2014-08-28 2021-07-26 삼성전자주식회사 유기 광전 소자 및 이미지 센서

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1230031B (de) * 1964-06-05 1966-12-08 Bayer Ag Verfahren zur Herstellung von Derivaten des Naphthalin-1, 4, 5, 8-tetracarbonsaeurediimids
DE2059540C3 (de) * 1970-12-03 1985-05-15 Hoechst Ag, 6230 Frankfurt Elektrophotographisches Aufzeichnungsmaterial mit einer photoleitfähigen Schicht
DE2636421A1 (de) * 1976-08-13 1978-02-16 Basf Ag Elektrisch leitfaehige perylenderivate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0380887A (ja) * 1989-08-23 1991-04-05 Akira Ishikawa 敷ぶとんの製造方法

Also Published As

Publication number Publication date
EP0031065A3 (en) 1982-01-20
DE3065326D1 (en) 1983-11-17
JPS5695241A (en) 1981-08-01
EP0031065B1 (de) 1983-10-12
EP0031065A2 (de) 1981-07-01
DE2951349A1 (de) 1981-07-02

Similar Documents

Publication Publication Date Title
JPH0139098B2 (enExample)
Li et al. Non-fullerene acceptors based on fused-ring oligomers for efficient polymer solar cells via complementary light-absorption
Kumar et al. Synthesis, optical and electrochemical properties of the A–π-D–π-A porphyrin and its application as an electron donor in efficient solution processed bulk heterojunction solar cells
áM Lui et al. Preparation, solution behaviour and electrical properties of octasubstituted phthalocyaninato and 2, 3-naphthalocyaninato oxotitanium (IV) complexes
WO2011047624A1 (zh) 硫杂环稠合的萘四羧酸二酰亚胺衍生物、制法和应用
EP3372581B1 (en) FULLERENE DERIVATIVE AND n-TYPE SEMICONDUCTOR MATERIAL
CN115057857B (zh) 一种基于苝二酰亚胺结构的电子型小分子及其制备方法和应用
LeGoff et al. Synthesis of a [1, 5, 1, 5] platyrin, a 26. pi.-electron tetrapyrrolic annulene
Nabasov et al. 2-Difluoroboryl-3-(quinolin-2-ylmethylene) isoindolin-1-one: Efficient Synthesis Method, TD-DFT Analysis and Electrical Properties of Thin Films
DE69020534T2 (de) Polysilanzusammensetzung.
Frenzel et al. A tetrathiafulvalene-based conjugated donor-acceptor-donor system
Frimer et al. Reinvestigation of the Photocyclization of 1, 4-Phenylenebis [phenylmaleic anhydride]: Preparation and Structure of [5] Helicene 5, 6: 9, 10-Dianhydride
CN114014873B (zh) 一类基于C2v对称氮杂稠环的化合物及其制备方法与应用
Simón Marqués et al. Indeno [1, 2-b] thiophene End-capped Perylene Diimide: Should the 1, 6-Regioisomers be systematically considered as a byproduct?
Haas et al. Carbon-carbon bond homolysis in hexakis (trifluoromethylmercapto) ethane at room temperature. Thermodynamic, kinetic, and electron spin resonance results
CN113651825A (zh) 一种富勒烯衍生物及其制备方法和钙钛矿太阳能电池
EP4624481A1 (en) Functional material, passivation film, solar cell, photovoltaic module, and photovoltaic system
CN108794511B (zh) 基于苯并二噻吩的衍生物、宽带隙小分子给体及其制备方法和应用
CN118955562A (zh) 空穴传输材料及其制备方法和钙钛矿太阳能电池
CN114933605A (zh) 一种基于苝二酰亚胺-芴结构的电子型小分子及其制备方法和应用
CN117320461A (zh) 一类芘基苯胺衍生物在有机电子器件中的应用
EP0346770B1 (en) Curable fluorine containing polyimide
CN115050892A (zh) 一种化合物、钙钛矿薄膜太阳能电池及其制备方法
Suh et al. Photoconductivity of 3, 5‐dinitrobenzoate of poly [1‐phenyl‐1‐penten‐3‐yn‐5‐ol](DN‐PPPYO) blended with poly [4‐(p‐N, N‐diphenylaminophenyl)‐1‐phenyl‐1‐buten‐3‐yne](PPAPBEY) as a hole transporting polymer
JPH0519564B2 (enExample)