DE2949210A1 - Elektronische bauteile und verfahren zu ihrer herstellung - Google Patents
Elektronische bauteile und verfahren zu ihrer herstellungInfo
- Publication number
- DE2949210A1 DE2949210A1 DE19792949210 DE2949210A DE2949210A1 DE 2949210 A1 DE2949210 A1 DE 2949210A1 DE 19792949210 DE19792949210 DE 19792949210 DE 2949210 A DE2949210 A DE 2949210A DE 2949210 A1 DE2949210 A1 DE 2949210A1
- Authority
- DE
- Germany
- Prior art keywords
- phases
- component
- substances
- composite
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000000463 material Substances 0.000 claims description 44
- 230000005496 eutectics Effects 0.000 claims description 34
- 239000000126 substance Substances 0.000 claims description 24
- 239000002131 composite material Substances 0.000 claims description 20
- 239000010408 film Substances 0.000 claims description 16
- 239000007787 solid Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 11
- 239000000155 melt Substances 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- 230000001747 exhibiting effect Effects 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 239000011888 foil Substances 0.000 description 18
- 239000000203 mixture Substances 0.000 description 10
- 241000446313 Lamella Species 0.000 description 9
- 239000013078 crystal Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000007704 transition Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 230000008014 freezing Effects 0.000 description 3
- 238000007710 freezing Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000005274 electronic transitions Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 230000002528 anti-freeze Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010410 dusting Methods 0.000 description 1
- -1 e.g. Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000013742 energy transducer activity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3242—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for the formation of PN junctions without addition of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0756—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/043—Mechanically stacked PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Led Devices (AREA)
- Credit Cards Or The Like (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US96636978A | 1978-12-04 | 1978-12-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE2949210A1 true DE2949210A1 (de) | 1980-06-19 |
Family
ID=25511289
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19792949210 Withdrawn DE2949210A1 (de) | 1978-12-04 | 1979-12-04 | Elektronische bauteile und verfahren zu ihrer herstellung |
Country Status (18)
Country | Link |
---|---|
JP (1) | JPS5578526A (da) |
AR (1) | AR220021A1 (da) |
AU (1) | AU5332179A (da) |
BE (1) | BE879975A (da) |
BR (1) | BR7907868A (da) |
DE (1) | DE2949210A1 (da) |
DK (1) | DK516479A (da) |
ES (1) | ES486540A0 (da) |
FI (1) | FI793805A (da) |
FR (1) | FR2443743A1 (da) |
GB (1) | GB2037485A (da) |
IT (1) | IT1164119B (da) |
NL (1) | NL7908739A (da) |
NO (1) | NO793923L (da) |
PL (1) | PL220124A1 (da) |
PT (1) | PT70533A (da) |
SE (1) | SE7909954L (da) |
ZA (1) | ZA796360B (da) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6356477B1 (en) * | 2001-01-29 | 2002-03-12 | Hewlett Packard Company | Cross point memory array including shared devices for blocking sneak path currents |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH413975A (de) * | 1962-07-31 | 1966-05-31 | Siemens Ag | Halbleiterelement und Verfahren zu seiner Herstellung |
DE1255199B (de) * | 1964-10-03 | 1967-11-30 | Siemens Ag | Elektrolumineszenter Leuchtstoffkoerper |
DE1519868B2 (de) * | 1965-03-18 | 1971-07-29 | Siemens AG, 1000 Berlin u 8000 München | Verfahren zum herstellen einer faserstruktur in einem koerper aus einer halbleitenden verbindung |
US3765956A (en) * | 1965-09-28 | 1973-10-16 | C Li | Solid-state device |
DE1614535B2 (de) * | 1967-06-01 | 1971-06-09 | Siemens AG, 1000 Berlin u 8000 München | Fotowiderstand fuer strahlungen einer wellenlaenge groesser als 8my |
GB1475991A (en) * | 1974-04-11 | 1977-06-10 | Fluidfire Dev | Apparatus in which combustion takes place in a fluidised bed |
-
1979
- 1979-11-12 BE BE0/198074A patent/BE879975A/fr unknown
- 1979-11-12 FR FR7927855A patent/FR2443743A1/fr not_active Withdrawn
- 1979-11-23 ZA ZA00796360A patent/ZA796360B/xx unknown
- 1979-11-28 GB GB7941003A patent/GB2037485A/en not_active Withdrawn
- 1979-11-29 AU AU53321/79A patent/AU5332179A/en not_active Abandoned
- 1979-12-03 NL NL7908739A patent/NL7908739A/nl not_active Application Discontinuation
- 1979-12-03 ES ES486540A patent/ES486540A0/es active Granted
- 1979-12-03 IT IT50970/79A patent/IT1164119B/it active
- 1979-12-03 BR BR7907868A patent/BR7907868A/pt unknown
- 1979-12-03 SE SE7909954A patent/SE7909954L/xx unknown
- 1979-12-03 JP JP15571579A patent/JPS5578526A/ja active Pending
- 1979-12-03 NO NO793923A patent/NO793923L/no unknown
- 1979-12-03 PT PT70533A patent/PT70533A/pt unknown
- 1979-12-04 PL PL22012479A patent/PL220124A1/xx unknown
- 1979-12-04 AR AR279162A patent/AR220021A1/es active
- 1979-12-04 FI FI793805A patent/FI793805A/fi not_active Application Discontinuation
- 1979-12-04 DE DE19792949210 patent/DE2949210A1/de not_active Withdrawn
- 1979-12-04 DK DK516479A patent/DK516479A/da unknown
Also Published As
Publication number | Publication date |
---|---|
FR2443743A1 (fr) | 1980-07-04 |
ES8102419A1 (es) | 1980-12-16 |
ES486540A0 (es) | 1980-12-16 |
JPS5578526A (en) | 1980-06-13 |
AR220021A1 (es) | 1980-09-30 |
NO793923L (no) | 1980-06-05 |
AU5332179A (en) | 1980-06-12 |
DK516479A (da) | 1980-06-05 |
SE7909954L (sv) | 1980-06-05 |
FI793805A (fi) | 1980-06-05 |
PL220124A1 (da) | 1980-09-08 |
ZA796360B (en) | 1980-11-26 |
IT1164119B (it) | 1987-04-08 |
BE879975A (fr) | 1980-03-03 |
PT70533A (en) | 1980-01-01 |
IT7950970A0 (it) | 1979-12-03 |
BR7907868A (pt) | 1980-07-29 |
NL7908739A (nl) | 1980-06-06 |
GB2037485A (en) | 1980-07-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE68918362T2 (de) | Elektrolumineszierende Anordnung von Verbindungshalbleitern. | |
DE2932043C2 (de) | Feldgesteuerter Thyristor und Verfahren zu seiner Herstellung | |
DE2125303A1 (de) | Verfahren zur Herstellung einer Halbleiteranordnung und durch dieses Verfahren hergestellte Halbleiteranordnung | |
DE2246115A1 (de) | Photovoltazelle mit feingitterkontakt und verfahren zur herstellung | |
DE2702860A1 (de) | Solarzelle und verfahren zu ihrer herstellung | |
DE1933547B2 (de) | Traeger fuer halbleiterbauelemente | |
DE3214070A1 (de) | Thermoelement und thermoelektrische wandlervorrichtung | |
DE1084381B (de) | Legierungsverfahren zur Herstellung von pn-UEbergaengen an der Oberflaeche eines Halbleiterkoerpers | |
DE1764155C3 (de) | Verfahren zum Herstellen eines Halbleiterbauelementes aus einem Siliciumkörper | |
DE1808928C2 (de) | Halbleiterbauelement mit polykristallinen Bereichen und Verfahren zum Herstellen | |
EP0557318B1 (de) | Verfahren zur herstellung von halbleiterelementen, insbesondere von dioden | |
DE2062041C3 (de) | Verfahren zur Herstellung von Halbleiterübergängen durch Flüssigphasenepitaxie von festen Lösungen aus n/IV- und IV/Vl-Halbleiterverbindungen | |
DE1041161B (de) | Flaechentransistoranordnung | |
DE1130522B (de) | Flaechentransistor mit anlegierten Emitter- und Kollektorelektroden und Legierungs-verfahren zu seiner Herstellung | |
DE2949210A1 (de) | Elektronische bauteile und verfahren zu ihrer herstellung | |
DE1439316C3 (de) | Anordnung zur Erzeugung und/oder Verstärkung elektromagnetischer Strahlung | |
DE69009820T2 (de) | Halbleiteranordnung mit eindimensionalen Dotierungsleitern und Verfahren zur Herstellung einer derartigen Halbleiteranordnung. | |
DE1292758B (de) | Elektrisches Halbleiterbauelement | |
DE2855972C2 (de) | Halbleiteranordnung mit zwei integrierten und antiparallel geschalteten Dioden sowie Verfahren zu ihrer Herstellung | |
DE1464305A1 (de) | Halbleitervorrichtung und Verfahren zu ihrer Herstellung | |
DE1944416C2 (de) | Verfahren zum Herstellen von flächenhaften Transistoren lateraler Struktur und geringer Kapazität | |
DE2207057A1 (de) | Monolithische Halbleiter-Anzeigevorrichtung | |
DE3235412A1 (de) | Integrierte halbleiterschaltungsvorrichtung und verfahren zu ihrer herstellung | |
DE1544224B2 (de) | Siliziumdiode und verfahren zu ihrer herstellung | |
DE2709628A1 (de) | Verfahren zum herstellen von halbleitern |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8139 | Disposal/non-payment of the annual fee |