ES8102419A1 - Un metodo de fabricar un dispositivo electronico tal como u-na celula fotovoltaica, un diodo luminiscente o un rectifi- cador. - Google Patents

Un metodo de fabricar un dispositivo electronico tal como u-na celula fotovoltaica, un diodo luminiscente o un rectifi- cador.

Info

Publication number
ES8102419A1
ES8102419A1 ES486540A ES486540A ES8102419A1 ES 8102419 A1 ES8102419 A1 ES 8102419A1 ES 486540 A ES486540 A ES 486540A ES 486540 A ES486540 A ES 486540A ES 8102419 A1 ES8102419 A1 ES 8102419A1
Authority
ES
Spain
Prior art keywords
lamellae
type
materials
devices
alternately
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES486540A
Other languages
English (en)
Other versions
ES486540A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of ES8102419A1 publication Critical patent/ES8102419A1/es
Publication of ES486540A0 publication Critical patent/ES486540A0/es
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H01L21/3242—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for the formation of PN junctions without addition of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/043—Mechanically stacked PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

METODO DE FABRICACION DE COMPONENTES ELECTRONICOS. BASANDOSE EN LA PROPIEDAD DE LAS SUSTANCIAS EUTETICAS O EUTECTOIDES DE CONFORMARSE SUS DOS COMPONENTES EN PEQUEÑAS LAMINAS ESTRATIFICADAS, USANDO PARA LA MEZCLA UNA SUSTANCIA P Y OTRA N, SE CONSIGUEN LAS UNIONES PN NECESARIAS PARA LA FORMACION DE COMPONENTES ELECTRONICOS. ESTE METODO SE COMPLETA CON TECNICAS PARA LA ORIENTACION DE LAS LAMINAS. PARA PROPORCIONAR LAS CONEXIONES ELECTRICAS SE FORMAN, A TRAVES DEL COMPUESTO, UNAS CAPAS DE SUSTANCIAS RESPECTIVAS ELECTRONICAMENTE SIMILARES A CADA UNA DE LAS FASES DONDE SE DISPONEN LOS CONTACTOS ELECTRICOS PARA LOS TERMINALES DEL DISPOSITIVO. D
ES486540A 1978-12-04 1979-12-03 Un metodo de fabricar un dispositivo electronico tal como u-na celula fotovoltaica, un diodo luminiscente o un rectifi- cador. Granted ES486540A0 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US96636978A 1978-12-04 1978-12-04

Publications (2)

Publication Number Publication Date
ES8102419A1 true ES8102419A1 (es) 1980-12-16
ES486540A0 ES486540A0 (es) 1980-12-16

Family

ID=25511289

Family Applications (1)

Application Number Title Priority Date Filing Date
ES486540A Granted ES486540A0 (es) 1978-12-04 1979-12-03 Un metodo de fabricar un dispositivo electronico tal como u-na celula fotovoltaica, un diodo luminiscente o un rectifi- cador.

Country Status (18)

Country Link
JP (1) JPS5578526A (es)
AR (1) AR220021A1 (es)
AU (1) AU5332179A (es)
BE (1) BE879975A (es)
BR (1) BR7907868A (es)
DE (1) DE2949210A1 (es)
DK (1) DK516479A (es)
ES (1) ES486540A0 (es)
FI (1) FI793805A (es)
FR (1) FR2443743A1 (es)
GB (1) GB2037485A (es)
IT (1) IT1164119B (es)
NL (1) NL7908739A (es)
NO (1) NO793923L (es)
PL (1) PL220124A1 (es)
PT (1) PT70533A (es)
SE (1) SE7909954L (es)
ZA (1) ZA796360B (es)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6356477B1 (en) * 2001-01-29 2002-03-12 Hewlett Packard Company Cross point memory array including shared devices for blocking sneak path currents

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH413975A (de) * 1962-07-31 1966-05-31 Siemens Ag Halbleiterelement und Verfahren zu seiner Herstellung
DE1439455A1 (de) * 1964-10-03 1968-12-05 Siemens Ag Halbleiterbauelement mit sperrendem Vielfach-Spitzenkontakt
DE1519869B1 (de) * 1965-03-18 1970-01-15 Siemens Ag Verfahren zum Herstellen einer Faserstruktur in einem Koerper aus einer halbleitenden Verbindung
US3765956A (en) * 1965-09-28 1973-10-16 C Li Solid-state device
DE1614535B2 (de) * 1967-06-01 1971-06-09 Siemens AG, 1000 Berlin u 8000 München Fotowiderstand fuer strahlungen einer wellenlaenge groesser als 8my
GB1475991A (en) * 1974-04-11 1977-06-10 Fluidfire Dev Apparatus in which combustion takes place in a fluidised bed

Also Published As

Publication number Publication date
NL7908739A (nl) 1980-06-06
DE2949210A1 (de) 1980-06-19
BE879975A (fr) 1980-03-03
FI793805A (fi) 1980-06-05
DK516479A (da) 1980-06-05
PL220124A1 (es) 1980-09-08
ES486540A0 (es) 1980-12-16
SE7909954L (sv) 1980-06-05
BR7907868A (pt) 1980-07-29
NO793923L (no) 1980-06-05
IT7950970A0 (it) 1979-12-03
PT70533A (en) 1980-01-01
FR2443743A1 (fr) 1980-07-04
IT1164119B (it) 1987-04-08
JPS5578526A (en) 1980-06-13
AR220021A1 (es) 1980-09-30
AU5332179A (en) 1980-06-12
ZA796360B (en) 1980-11-26
GB2037485A (en) 1980-07-09

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