KR880005701A - 이종접합 p-i-n 광전지 - Google Patents

이종접합 p-i-n 광전지 Download PDF

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KR880005701A
KR880005701A KR870011658A KR870011658A KR880005701A KR 880005701 A KR880005701 A KR 880005701A KR 870011658 A KR870011658 A KR 870011658A KR 870011658 A KR870011658 A KR 870011658A KR 880005701 A KR880005701 A KR 880005701A
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브이. 메이어즈 피터
리우 정-흥
제이. 프레이 티모씨
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원본미기재
아메텍, 아이엔시
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/077—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells the devices comprising monocrystalline or polycrystalline materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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Abstract

내용 없음

Description

이종접합 p-i-n 광전지
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본발명의 이종접합 p-i-n광전지에 관한 개략적인 에너지밴드도.
제2도는 본발명에 따른 이종접합 p-i-n광전지의 제1실시예에 관한 개략적인 측면도.
제3도는 본발명에 따른 이종접합 P-i-n광전지의 제2실시예에 관한 개략적인 측면도.

Claims (21)

  1. p-형의 비교적 넓은 밴드갭 반도체층, n-형의 비교적 넓은 밴드갭 반도체층, 상기-p형층과 한측면 상에서 전기적으로 전도성 접촉을 하고 상기 n-형층과 반대 측면상에서 전기적으로 전도성 접촉을 하는,광방사 흡수제로서 사용되는 고저항율의 진성 반도체층, 및 상기 P-형층과 상기n-형층 각각과 전기적으로 전도성접촉을 하는 제1과 제2오믹 접촉들을 포함하는 최소한 네개의 상이한 원소들로 함께 이루어진 최소한 세개의 상이한 반도체층들을 갖는 이종접합 p-i-n광전지.
  2. 제1항에 있어서, 하나 또는 그 이상의 중간 반도체층 들이 상기 진성층과 상기 P-형 및 n~형층들중의 한층 사이에 배치되어, 상기 전성층의 상기 하나 또는 그이상의 중간층들을 통하여 상기 한충과 전기적으로 전도성 접촉을 하는 광전지.
  3. 제2항에 있어서, 하나 또는 그 이상의 중간 반도체 층들이 상기 n-형충과 진성층 사이와 상기 진성층과 상기 P-형사이에 배치되는 광전지.
  4. 제1항에 있어서, 상기 반도체층들의 조성물이 상기 진성층과 상기 n-형층 사이의 공유영역에서 전도대 엣지의 스파이크(spike)와 상기 진성층과 상기 P-형층 사이의 공유영역에서 가전자대엣지의 스파이크를 최소화시키도록 선택되는 광전지.
  5. 제4항에 있어서, 상가 진성층과 p-형층의 조성물이 공통 음이온을 갖고 상기 진성층과 n-형층이 공통 양이온을 가져서, 공통 음이온들과 공통 양이온들을 지니을 화합물들을 사용함으로써 각각 가전자대와 전도대의 스파이크들을 최소화시키는 광전지.
  6. 제1항에 있어서, 상기 반도체층들중 최소한 하나가 다결정질인 광전지.
  7. 제6항에 있어서, 상기 반도체층들의 각각이 다결정질인 광전지.
  8. 제1항에 있어서, 상기 반도체층들중 최소한 하나가 Ⅱ -Vl 화합물인 광전지.
  9. 제8항에 있어서, 상기 반도체 층들의 각각의 Ⅲ -Ⅵ 화합물인 광전지.
  10. 제1항에 있어서. 상기 P-형충이 ZnTe이며, 상기 진성층이 CdTe이고 상기 n-형층이 CdS인 광전지.
  11. 제10항에 있어서, 상기 반도체층들의 각각이 다결정질인 광전지.
  12. 제10항에 있어서, 상기 진성층이 전착된 CdTe인 광전지.
  13. 제10항에 있어서, 상기 n-형층이 좁은 갭반응기로 부착된 CdS 인 광전지.
  14. 제12항에 있어서, 상기 n-형층이 진공증착된 CdS이고,상기 p-형층이 진공증착된 CdS이고, 상기 p-형층이 진공증착된 ZnTe인 광전지.
  15. 제13항에 있어서, 상기 진성층이 전착된 CdTe이고 상기 p-형층이 진공증착된 ZnTe인 광전지.
  16. 제1항에 있어서, 상기 n-형층이, 상기 n-형층과 상기 제2오믹 접촉을 전기적으로 연결시키는 투명한 전도산화물층과 상기 산화물층을 지지하는 유리판을 포함하는 투명한 기판상으로 부착되는 광전지.
  17. 제10항에 있어서, 상기 CdS가 상기 n-형층과 상기 제2오믹접촉을 전기적으로 연결시키는 투명한 전도산화물층과 상기 산화물층을 지지하는 유리판을 포함하는 투명한 기판상으로 부착되는 광전지.
  18. 제13항에 있어서, 상기 CdS 가 상기 n-형층과 상기 제2오믹접촉을 전기적으로 연결시키는 투명한 전도산화물충과 상기 산화물층을 지지하는 유리판을 포함하는 투명한 기판상으로 부착되는 광전지.
  19. 제1항에 있어서, 상기 n-형층과 p-형층이 공통음이온들과 공통 양이온들이 없는 광전지.
  20. 제1항에 있어서, 10%보다큰 효율을 특징으로하는 광전지.
  21. 다결정질 Ⅱ -Ⅵ화합물로된 p-형의 비교적 넓은 밴드갭 반도체층, 다결정질 Ⅱ -Ⅵ화합물로된 n-형의 비교적 넓은 밴드갭 반도체층, 상기 p-형층과 한측면상에서 전기적으로 전도성접촉을 하고 상기 n-형층과 반대측면상에서 전기적으로 전도성 접촉을 하는,· 광방사 흡수제로서 사용되는 다결정질 Ⅱ -Ⅵ화합물로된 고저항을의 진성 반도체층, 및 상기 p-형층과 상기 n-형층 각각과 전기적으로 전도성 접촉을 하는 제1과 제2 오믹 접촉들을 포함하는 최소한 네개의 상이한 원소들로 함께 이루어진 최소한 세개의 상이한 반 도체층들을 갖는 이종접합 p-i-n광전지.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870011658A 1986-10-21 1987-10-20 이종접합 p-i-n 광전지 KR960004097B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US922,122 1986-10-21
US06/922,122 US4710589A (en) 1986-10-21 1986-10-21 Heterojunction p-i-n photovoltaic cell
US922122 1992-07-29

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KR880005701A true KR880005701A (ko) 1988-06-30
KR960004097B1 KR960004097B1 (ko) 1996-03-26

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US (1) US4710589A (ko)
EP (1) EP0265251B1 (ko)
JP (1) JP2702129B2 (ko)
KR (1) KR960004097B1 (ko)
AT (1) ATE119712T1 (ko)
AU (1) AU604509B2 (ko)
CA (1) CA1299715C (ko)
DE (1) DE3751133D1 (ko)
IL (1) IL84217A (ko)
ZA (1) ZA877875B (ko)

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KR960004097B1 (ko) 1996-03-26
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AU604509B2 (en) 1990-12-20
AU8001487A (en) 1988-04-28
IL84217A0 (en) 1988-03-31
JPS63110777A (ja) 1988-05-16
US4710589A (en) 1987-12-01
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ZA877875B (en) 1988-06-29

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