AU5332179A - Fabricating an electronic device having two intermixed phases - Google Patents

Fabricating an electronic device having two intermixed phases

Info

Publication number
AU5332179A
AU5332179A AU53321/79A AU5332179A AU5332179A AU 5332179 A AU5332179 A AU 5332179A AU 53321/79 A AU53321/79 A AU 53321/79A AU 5332179 A AU5332179 A AU 5332179A AU 5332179 A AU5332179 A AU 5332179A
Authority
AU
Australia
Prior art keywords
fabricating
electronic device
intermixed
phases
intermixed phases
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU53321/79A
Other languages
English (en)
Inventor
William A. Colburn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Colburn Wa
Original Assignee
Colburn Wa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Colburn Wa filed Critical Colburn Wa
Publication of AU5332179A publication Critical patent/AU5332179A/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H01L21/3242Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for the formation of PN junctions without addition of impurities
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0756Stacked arrangements of devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/043Mechanically stacked PV cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Led Devices (AREA)
  • Credit Cards Or The Like (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
AU53321/79A 1978-12-04 1979-11-29 Fabricating an electronic device having two intermixed phases Abandoned AU5332179A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US96636978A 1978-12-04 1978-12-04
US966369 1978-12-04

Publications (1)

Publication Number Publication Date
AU5332179A true AU5332179A (en) 1980-06-12

Family

ID=25511289

Family Applications (1)

Application Number Title Priority Date Filing Date
AU53321/79A Abandoned AU5332179A (en) 1978-12-04 1979-11-29 Fabricating an electronic device having two intermixed phases

Country Status (18)

Country Link
JP (1) JPS5578526A (da)
AR (1) AR220021A1 (da)
AU (1) AU5332179A (da)
BE (1) BE879975A (da)
BR (1) BR7907868A (da)
DE (1) DE2949210A1 (da)
DK (1) DK516479A (da)
ES (1) ES486540A0 (da)
FI (1) FI793805A (da)
FR (1) FR2443743A1 (da)
GB (1) GB2037485A (da)
IT (1) IT1164119B (da)
NL (1) NL7908739A (da)
NO (1) NO793923L (da)
PL (1) PL220124A1 (da)
PT (1) PT70533A (da)
SE (1) SE7909954L (da)
ZA (1) ZA796360B (da)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6356477B1 (en) * 2001-01-29 2002-03-12 Hewlett Packard Company Cross point memory array including shared devices for blocking sneak path currents

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH413975A (de) * 1962-07-31 1966-05-31 Siemens Ag Halbleiterelement und Verfahren zu seiner Herstellung
DE1439455A1 (de) * 1964-10-03 1968-12-05 Siemens Ag Halbleiterbauelement mit sperrendem Vielfach-Spitzenkontakt
DE1519868B2 (de) * 1965-03-18 1971-07-29 Siemens AG, 1000 Berlin u 8000 München Verfahren zum herstellen einer faserstruktur in einem koerper aus einer halbleitenden verbindung
US3765956A (en) * 1965-09-28 1973-10-16 C Li Solid-state device
DE1614535B2 (de) * 1967-06-01 1971-06-09 Siemens AG, 1000 Berlin u 8000 München Fotowiderstand fuer strahlungen einer wellenlaenge groesser als 8my
GB1475991A (en) * 1974-04-11 1977-06-10 Fluidfire Dev Apparatus in which combustion takes place in a fluidised bed

Also Published As

Publication number Publication date
ES8102419A1 (es) 1980-12-16
ZA796360B (en) 1980-11-26
PT70533A (en) 1980-01-01
NL7908739A (nl) 1980-06-06
SE7909954L (sv) 1980-06-05
IT7950970A0 (it) 1979-12-03
FR2443743A1 (fr) 1980-07-04
JPS5578526A (en) 1980-06-13
PL220124A1 (da) 1980-09-08
BR7907868A (pt) 1980-07-29
BE879975A (fr) 1980-03-03
DE2949210A1 (de) 1980-06-19
DK516479A (da) 1980-06-05
ES486540A0 (es) 1980-12-16
NO793923L (no) 1980-06-05
GB2037485A (en) 1980-07-09
AR220021A1 (es) 1980-09-30
IT1164119B (it) 1987-04-08
FI793805A (fi) 1980-06-05

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