DE2939490C2 - - Google Patents

Info

Publication number
DE2939490C2
DE2939490C2 DE2939490A DE2939490A DE2939490C2 DE 2939490 C2 DE2939490 C2 DE 2939490C2 DE 2939490 A DE2939490 A DE 2939490A DE 2939490 A DE2939490 A DE 2939490A DE 2939490 C2 DE2939490 C2 DE 2939490C2
Authority
DE
Germany
Prior art keywords
capacitors
read
charge
line
column
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2939490A
Other languages
German (de)
English (en)
Other versions
DE2939490A1 (de
Inventor
Frank Dipl.-Phys. 4619 Bergkamen De Endlicher
Rudolf Dipl.-Ing. 8034 Germering De Koch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19792939490 priority Critical patent/DE2939490A1/de
Priority to US06/164,300 priority patent/US4380755A/en
Priority to EP80105482A priority patent/EP0027881B1/de
Priority to JP13367380A priority patent/JPS5657364A/ja
Priority to CA000361132A priority patent/CA1157954A/en
Publication of DE2939490A1 publication Critical patent/DE2939490A1/de
Application granted granted Critical
Publication of DE2939490C2 publication Critical patent/DE2939490C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/767—Horizontal readout lines, multiplexers or registers

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)
DE19792939490 1979-09-28 1979-09-28 Monolithisch integrierter zweidimensionaler bildsensor mit einer differenzbildenden stufe Granted DE2939490A1 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE19792939490 DE2939490A1 (de) 1979-09-28 1979-09-28 Monolithisch integrierter zweidimensionaler bildsensor mit einer differenzbildenden stufe
US06/164,300 US4380755A (en) 1979-09-28 1980-06-30 Monolithically integrated two-dimensional image sensor with a difference forming stage
EP80105482A EP0027881B1 (de) 1979-09-28 1980-09-12 Monolithisch integrierter, zweidimensionaler Bildsensor mit einer differenzbildenden Stufe und Verfahren zu dessen Betrieb
JP13367380A JPS5657364A (en) 1979-09-28 1980-09-25 Monolithic integrated twoodimensional image sensor and method of driving same
CA000361132A CA1157954A (en) 1979-09-28 1980-09-26 Monolithically integrated two-dimensional image sensor with a difference forming stage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19792939490 DE2939490A1 (de) 1979-09-28 1979-09-28 Monolithisch integrierter zweidimensionaler bildsensor mit einer differenzbildenden stufe

Publications (2)

Publication Number Publication Date
DE2939490A1 DE2939490A1 (de) 1981-04-16
DE2939490C2 true DE2939490C2 (en, 2012) 1987-08-06

Family

ID=6082201

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19792939490 Granted DE2939490A1 (de) 1979-09-28 1979-09-28 Monolithisch integrierter zweidimensionaler bildsensor mit einer differenzbildenden stufe

Country Status (5)

Country Link
US (1) US4380755A (en, 2012)
EP (1) EP0027881B1 (en, 2012)
JP (1) JPS5657364A (en, 2012)
CA (1) CA1157954A (en, 2012)
DE (1) DE2939490A1 (en, 2012)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5848577A (ja) * 1981-09-18 1983-03-22 Semiconductor Res Found 固体撮像装置の画像信号読出し方法
DE3138294A1 (de) * 1981-09-25 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Zweidimensionaler halbleiter-bildsensor mit steuerung oder regelung der integrationszeit
DE3138240A1 (de) * 1981-09-25 1983-04-07 Siemens AG, 1000 Berlin und 8000 München Zweidimensionaler halbleiter-bildsensor mit steuerung oder regelung der integrationszeit
JPS58136179A (ja) * 1982-02-05 1983-08-13 Sony Corp 固体撮像装置
JPS58137371A (ja) * 1982-02-10 1983-08-15 Hitachi Ltd 固体撮像装置
JPS58169965A (ja) * 1982-03-31 1983-10-06 Hitachi Ltd 固体撮像装置
JPS5928772A (ja) * 1982-08-11 1984-02-15 Sony Corp 固体撮像装置の駆動方法
JPS5952974A (ja) * 1982-09-20 1984-03-27 Hitachi Ltd 固体撮像装置
DE3236146A1 (de) * 1982-09-29 1984-03-29 Siemens AG, 1000 Berlin und 8000 München Zweidimensionaler halbleiter-bildsensor und verfahren zu seinem betrieb
JPS59108463A (ja) * 1982-12-14 1984-06-22 Olympus Optical Co Ltd 固体撮像装置
US4729030A (en) * 1983-12-05 1988-03-01 New York Institute Of Technology Noise reduction in video display apparatus
JPH0831991B2 (ja) * 1984-04-17 1996-03-27 オリンパス光学工業株式会社 固体撮像装置
US4622587A (en) * 1984-08-07 1986-11-11 Texas Instruments Incorporated Monolithic delta frame circuit
DE3588227T2 (de) * 1984-12-26 2001-08-09 Canon K.K., Tokio/Tokyo Bildsensoranordnung
USRE34309E (en) * 1984-12-26 1993-07-13 Canon Kabushiki Kaisha Image sensor device having plural photoelectric converting elements
EP0576104B1 (en) * 1985-11-15 1998-02-25 Canon Kabushiki Kaisha Photoelectric transducer apparatus
US5737016A (en) * 1985-11-15 1998-04-07 Canon Kabushiki Kaisha Solid state image pickup apparatus for reducing noise
JPH084127B2 (ja) * 1986-09-30 1996-01-17 キヤノン株式会社 光電変換装置
US5771070A (en) * 1985-11-15 1998-06-23 Canon Kabushiki Kaisha Solid state image pickup apparatus removing noise from the photoelectric converted signal
US4914519A (en) * 1986-09-19 1990-04-03 Canon Kabushiki Kaisha Apparatus for eliminating noise in a solid-state image pickup device
US4682236A (en) * 1985-12-20 1987-07-21 General Electric Company Read and clear readout circuit and method of operation of an IR sensing charge injection device
US4661854A (en) * 1985-12-26 1987-04-28 Rca Corporation Transfer smear reduction for charge sweep device imagers
FR2593987B1 (fr) * 1986-01-24 1989-08-04 Thomson Csf Dispositif photosensible a l'etat solide
US4956686A (en) * 1986-02-04 1990-09-11 Texas Instruments Incorporated Two color infrared focal plane array
JPH0824352B2 (ja) * 1986-02-10 1996-03-06 株式会社日立製作所 固体撮像素子
US4727259A (en) * 1986-02-24 1988-02-23 The United States Of America As Represented By The Secretary Of The Air Force Monolithic area array with shutter operable to only transmit light between the minimum and maximum ranges for laser rangefinding
JPS6328167A (ja) * 1986-07-22 1988-02-05 Fuji Xerox Co Ltd イメ−ジセンサの駆動装置
US4752829A (en) * 1986-12-29 1988-06-21 Fairchild Weston Systems, Inc. Multipacket charge transfer image sensor and method
US4819070A (en) * 1987-04-10 1989-04-04 Texas Instruments Incorporated Image sensor array
DE3889603T2 (de) * 1987-08-05 1994-09-15 Canon Kk Photoelektrisches Umwandlungsgerät.
US4843473A (en) * 1988-03-21 1989-06-27 Polaroid Corporation Charge injection device with low noise readout
US5144684A (en) * 1989-04-03 1992-09-01 Ricoh Company, Ltd. Parallel image processing apparatus using edge detection layer
US5146339A (en) * 1989-11-21 1992-09-08 Canon Kabushiki Kaisha Photoelectric converting apparatus employing Darlington transistor readout
US5317407A (en) * 1991-03-11 1994-05-31 General Electric Company Fixed-pattern noise correction circuitry for solid-state imager
AU4375393A (en) * 1992-05-22 1993-12-30 Indiana University Foundation Area-efficient implication circuits for very dense lukasiewicz logic arrays
JPH0661465A (ja) * 1992-08-11 1994-03-04 Mitsubishi Electric Corp 赤外線撮像素子
US5386128A (en) * 1994-01-21 1995-01-31 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output
US6515285B1 (en) 1995-10-24 2003-02-04 Lockheed-Martin Ir Imaging Systems, Inc. Method and apparatus for compensating a radiation sensor for ambient temperature variations
JP3774499B2 (ja) 1996-01-24 2006-05-17 キヤノン株式会社 光電変換装置
US6249002B1 (en) 1996-08-30 2001-06-19 Lockheed-Martin Ir Imaging Systems, Inc. Bolometric focal plane array
US6791610B1 (en) 1996-10-24 2004-09-14 Lockheed Martin Ir Imaging Systems, Inc. Uncooled focal plane array sensor
JP2000188723A (ja) * 1998-12-22 2000-07-04 Mitsubishi Electric Corp 画像処理装置
US6730909B2 (en) 2000-05-01 2004-05-04 Bae Systems, Inc. Methods and apparatus for compensating a radiation sensor for temperature variations of the sensor
US7030378B2 (en) * 2003-08-05 2006-04-18 Bae Systems Information And Electronic Systems Integration, Inc. Real-time radiation sensor calibration
KR100710202B1 (ko) * 2005-07-14 2007-04-20 동부일렉트로닉스 주식회사 반도체 소자의 캐패시터 제조방법 및 이를 이용한 이미지센서
KR101225060B1 (ko) * 2006-03-08 2013-01-23 삼성전자주식회사 이미지 센서에서 노이즈 판단 기준을 추정하는 방법 및장치

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1437328A (en) * 1972-09-25 1976-05-26 Rca Corp Sensors having recycling means
JPS5226974B2 (en, 2012) * 1973-02-14 1977-07-18
US4001501A (en) * 1973-05-02 1977-01-04 Rca Corporation Signal processing circuits for charge-transfer, image-sensing arrays
US3876952A (en) * 1973-05-02 1975-04-08 Rca Corp Signal processing circuits for charge-transfer, image-sensing arrays
DE2344513C3 (de) * 1973-09-04 1978-08-24 Siemens Ag, 1000 Berlin Und 8000 Muenchen Matrix mit Ein-Transistor-Speicherelementen
US3949162A (en) * 1974-02-25 1976-04-06 Actron Industries, Inc. Detector array fixed-pattern noise compensation
JPS5619786B2 (en, 2012) * 1975-02-20 1981-05-09
JPS5310433B2 (en, 2012) * 1975-03-10 1978-04-13
US4010319A (en) * 1975-11-20 1977-03-01 Rca Corporation Smear reduction in ccd imagers
JPS5373915A (en) * 1976-12-14 1978-06-30 Sony Corp Noise eliminating circuit for solid image pickup unit
DE2611771C3 (de) * 1976-03-19 1978-09-07 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Betrieb einer CID-Sensormatrix
FR2356328A1 (fr) * 1976-06-24 1978-01-20 Ibm France Dispositif d'elimination du bruit dans les reseaux photosensibles a auto-balayage
DE2642209A1 (de) * 1976-09-20 1978-03-23 Siemens Ag Auslesevorrichtung fuer einen cid- bzw. bcid-sensor und verfahren zu deren betrieb
DE2642166A1 (de) 1976-09-20 1978-03-23 Siemens Ag Auslesevorrichtung fuer einen cid-sensor bzw. bcid-sensor und verfahren zu ihrem betrieb
DE2702024A1 (de) * 1977-01-19 1978-07-20 Siemens Ag Ausleseverfahren fuer eine cid-sensormatrix
CA1099409A (en) * 1977-04-07 1981-04-14 Lawrence G. Heller Charge transfer device differencing circuit
JPS583630B2 (ja) * 1977-09-16 1983-01-22 松下電子工業株式会社 固体光像検出装置
DE2813254C2 (de) * 1978-03-28 1979-12-06 Siemens Ag, 1000 Berlin Und 8000 Muenchen Eindimensionaler CCD-Sensor mit Überlaufvorrichtung
US4169273A (en) * 1978-06-26 1979-09-25 Honeywell Inc. Photodetector signal processing
GB2045574B (en) * 1979-03-22 1983-04-20 Quantel Ltd Video movement detection
US4317134A (en) * 1980-05-12 1982-02-23 Eastman Kodak Company Method and apparatus for pattern noise correction

Also Published As

Publication number Publication date
DE2939490A1 (de) 1981-04-16
EP0027881A1 (de) 1981-05-06
JPS5657364A (en) 1981-05-19
CA1157954A (en) 1983-11-29
EP0027881B1 (de) 1983-08-17
US4380755A (en) 1983-04-19

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Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee