DE2925648C2 - - Google Patents
Info
- Publication number
- DE2925648C2 DE2925648C2 DE2925648A DE2925648A DE2925648C2 DE 2925648 C2 DE2925648 C2 DE 2925648C2 DE 2925648 A DE2925648 A DE 2925648A DE 2925648 A DE2925648 A DE 2925648A DE 2925648 C2 DE2925648 C2 DE 2925648C2
- Authority
- DE
- Germany
- Prior art keywords
- gain
- semiconductor laser
- laser according
- active region
- heterostructure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 53
- 230000000737 periodic effect Effects 0.000 claims description 27
- 230000005855 radiation Effects 0.000 claims description 24
- 230000008859 change Effects 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 11
- 230000002787 reinforcement Effects 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 230000000873 masking effect Effects 0.000 claims description 5
- 230000001427 coherent effect Effects 0.000 claims description 4
- 230000003321 amplification Effects 0.000 description 13
- 238000003199 nucleic acid amplification method Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 210000001015 abdomen Anatomy 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
- H01S5/0653—Mode suppression, e.g. specific multimode
- H01S5/0654—Single longitudinal mode emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7811085 | 1978-11-08 | ||
| NL7900668A NL7900668A (nl) | 1978-11-08 | 1979-01-29 | Inrichting voor het opwekken of versterken van coheren- te electromagnetische straling, en werkwijze voor het vervaardigen van de inrichting. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2925648A1 DE2925648A1 (de) | 1980-05-22 |
| DE2925648C2 true DE2925648C2 (en, 2012) | 1987-12-10 |
Family
ID=26645465
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19792925648 Granted DE2925648A1 (de) | 1978-11-08 | 1979-06-26 | Anordnung zum erzeugen oder verstaerken kohaerenter elektromagnetischer strahlung und verfahren zur herstellung der anordnung |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4359776A (en, 2012) |
| AU (1) | AU4779979A (en, 2012) |
| DE (1) | DE2925648A1 (en, 2012) |
| FR (1) | FR2441935A1 (en, 2012) |
| GB (1) | GB2033647A (en, 2012) |
| IT (1) | IT1121253B (en, 2012) |
| NL (1) | NL7900668A (en, 2012) |
| SE (1) | SE7909119L (en, 2012) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7908969A (nl) * | 1979-12-13 | 1981-07-16 | Philips Nv | Halfgeleiderlaser. |
| JPS5967677A (ja) * | 1982-07-01 | 1984-04-17 | Semiconductor Res Found | 光集積回路 |
| US4573163A (en) * | 1982-09-13 | 1986-02-25 | At&T Bell Laboratories | Longitudinal mode stabilized laser |
| JPH0666509B2 (ja) * | 1983-12-14 | 1994-08-24 | 株式会社日立製作所 | 分布帰還型半導体レ−ザ装置 |
| JPS61113293A (ja) * | 1984-11-07 | 1986-05-31 | Sharp Corp | 半導体レ−ザアレイ装置 |
| US4794346A (en) * | 1984-11-21 | 1988-12-27 | Bell Communications Research, Inc. | Broadband semiconductor optical amplifier structure |
| US4689797A (en) * | 1985-08-19 | 1987-08-25 | Gte Laboratories Incorporated | High power single spatial mode semiconductor laser |
| US4824747A (en) * | 1985-10-21 | 1989-04-25 | General Electric Company | Method of forming a variable width channel |
| US4845014A (en) * | 1985-10-21 | 1989-07-04 | Rca Corporation | Method of forming a channel |
| US4837775A (en) * | 1985-10-21 | 1989-06-06 | General Electric Company | Electro-optic device having a laterally varying region |
| US4783788A (en) * | 1985-12-16 | 1988-11-08 | Lytel Incorporated | High power semiconductor lasers |
| JPS62194237A (ja) * | 1986-02-20 | 1987-08-26 | Kyohei Sakuta | 光増幅機能を有する３結合導波路光タツプ |
| US4791648A (en) * | 1987-02-04 | 1988-12-13 | Amoco Corporation | Laser having a substantially planar waveguide |
| CA1330242C (en) * | 1987-11-30 | 1994-06-14 | Gte Laboratories Incorporated | Subcarrier-multiplexed optical transmission systems using optical channel selection |
| DE3923354A1 (de) * | 1989-07-14 | 1991-01-24 | Licentia Gmbh | Halbleiterlaser |
| JPH04155988A (ja) * | 1990-10-19 | 1992-05-28 | Rohm Co Ltd | 半導体レーザ |
| US5627668A (en) * | 1992-02-10 | 1997-05-06 | Gte Laboratories Incorporated | Subcarrier-multiplexed optical transmission systems using optical channel selection |
| EP1066666B1 (de) * | 1999-02-03 | 2008-08-06 | TRUMPF LASERTECHNIK GmbH | Laser mit einer einrichtung zur veränderung der verteilung der intensität des laserlichtes über den laserstrahlquerschnitt |
| US7359113B2 (en) * | 2005-02-02 | 2008-04-15 | Covega Corp. | Semiconductor optical amplifier having a non-uniform injection current density |
| US20090089168A1 (en) * | 2007-01-10 | 2009-04-02 | Phyllis Adele Schneck | ACE (Alternative Currency Exchange): Alternative Currency Tracking and Mapping System and Method |
| US8890324B2 (en) * | 2010-09-28 | 2014-11-18 | Freescale Semiconductor, Inc. | Semiconductor structure having a through substrate via (TSV) and method for forming |
| DE102019102499A1 (de) * | 2019-01-31 | 2020-08-06 | Forschungsverbund Berlin E.V. | Vorrichtung zur Erzeugung von Laserstrahlung |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4251780A (en) * | 1978-07-03 | 1981-02-17 | Xerox Corporation | Stripe offset geometry in injection lasers to achieve transverse mode control |
-
1979
- 1979-01-29 NL NL7900668A patent/NL7900668A/nl not_active Application Discontinuation
- 1979-06-04 IT IT23273/79A patent/IT1121253B/it active
- 1979-06-06 AU AU47799/79A patent/AU4779979A/en not_active Abandoned
- 1979-06-07 GB GB7919893A patent/GB2033647A/en not_active Withdrawn
- 1979-06-18 US US06/049,778 patent/US4359776A/en not_active Expired - Lifetime
- 1979-06-26 DE DE19792925648 patent/DE2925648A1/de active Granted
- 1979-09-28 FR FR7924173A patent/FR2441935A1/fr not_active Withdrawn
- 1979-11-05 SE SE7909119A patent/SE7909119L/xx not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| GB2033647A (en) | 1980-05-21 |
| IT7923273A0 (it) | 1979-06-04 |
| NL7900668A (nl) | 1980-05-12 |
| DE2925648A1 (de) | 1980-05-22 |
| AU4779979A (en) | 1980-05-15 |
| IT1121253B (it) | 1986-04-02 |
| FR2441935A1 (fr) | 1980-06-13 |
| SE7909119L (sv) | 1980-05-09 |
| US4359776A (en) | 1982-11-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |