IT1121253B - Dispositivo per la generazione o l'amplificazione di radiazione elettromagnetica coerente e metodo di fabbricazione dello stesso - Google Patents

Dispositivo per la generazione o l'amplificazione di radiazione elettromagnetica coerente e metodo di fabbricazione dello stesso

Info

Publication number
IT1121253B
IT1121253B IT23273/79A IT2327379A IT1121253B IT 1121253 B IT1121253 B IT 1121253B IT 23273/79 A IT23273/79 A IT 23273/79A IT 2327379 A IT2327379 A IT 2327379A IT 1121253 B IT1121253 B IT 1121253B
Authority
IT
Italy
Prior art keywords
amplification
generation
manufacturing
electromagnetic radiation
coherent electromagnetic
Prior art date
Application number
IT23273/79A
Other languages
English (en)
Other versions
IT7923273A0 (it
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of IT7923273A0 publication Critical patent/IT7923273A0/it
Application granted granted Critical
Publication of IT1121253B publication Critical patent/IT1121253B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0654—Single longitudinal mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
IT23273/79A 1978-11-08 1979-06-04 Dispositivo per la generazione o l'amplificazione di radiazione elettromagnetica coerente e metodo di fabbricazione dello stesso IT1121253B (it)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7811085 1978-11-08
NL7900668A NL7900668A (nl) 1978-11-08 1979-01-29 Inrichting voor het opwekken of versterken van coheren- te electromagnetische straling, en werkwijze voor het vervaardigen van de inrichting.

Publications (2)

Publication Number Publication Date
IT7923273A0 IT7923273A0 (it) 1979-06-04
IT1121253B true IT1121253B (it) 1986-04-02

Family

ID=26645465

Family Applications (1)

Application Number Title Priority Date Filing Date
IT23273/79A IT1121253B (it) 1978-11-08 1979-06-04 Dispositivo per la generazione o l'amplificazione di radiazione elettromagnetica coerente e metodo di fabbricazione dello stesso

Country Status (8)

Country Link
US (1) US4359776A (it)
AU (1) AU4779979A (it)
DE (1) DE2925648A1 (it)
FR (1) FR2441935A1 (it)
GB (1) GB2033647A (it)
IT (1) IT1121253B (it)
NL (1) NL7900668A (it)
SE (1) SE7909119L (it)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7908969A (nl) * 1979-12-13 1981-07-16 Philips Nv Halfgeleiderlaser.
JPS5967677A (ja) * 1982-07-01 1984-04-17 Semiconductor Res Found 光集積回路
US4573163A (en) * 1982-09-13 1986-02-25 At&T Bell Laboratories Longitudinal mode stabilized laser
JPH0666509B2 (ja) * 1983-12-14 1994-08-24 株式会社日立製作所 分布帰還型半導体レ−ザ装置
JPS61113293A (ja) * 1984-11-07 1986-05-31 Sharp Corp 半導体レ−ザアレイ装置
US4794346A (en) * 1984-11-21 1988-12-27 Bell Communications Research, Inc. Broadband semiconductor optical amplifier structure
US4689797A (en) * 1985-08-19 1987-08-25 Gte Laboratories Incorporated High power single spatial mode semiconductor laser
US4845014A (en) * 1985-10-21 1989-07-04 Rca Corporation Method of forming a channel
US4824747A (en) * 1985-10-21 1989-04-25 General Electric Company Method of forming a variable width channel
US4837775A (en) * 1985-10-21 1989-06-06 General Electric Company Electro-optic device having a laterally varying region
US4783788A (en) * 1985-12-16 1988-11-08 Lytel Incorporated High power semiconductor lasers
JPS62194237A (ja) * 1986-02-20 1987-08-26 Kyohei Sakuta 光増幅機能を有する３結合導波路光タツプ
US4791648A (en) * 1987-02-04 1988-12-13 Amoco Corporation Laser having a substantially planar waveguide
CA1330242C (en) * 1987-11-30 1994-06-14 Gte Laboratories Incorporated Subcarrier-multiplexed optical transmission systems using optical channel selection
DE3923354A1 (de) * 1989-07-14 1991-01-24 Licentia Gmbh Halbleiterlaser
JPH04155988A (ja) * 1990-10-19 1992-05-28 Rohm Co Ltd 半導体レーザ
US5627668A (en) * 1992-02-10 1997-05-06 Gte Laboratories Incorporated Subcarrier-multiplexed optical transmission systems using optical channel selection
US6539045B1 (en) * 1999-02-03 2003-03-25 Trumpf Lasertechnik Gmbh Laser with device for modifying the distribution of laser light intensity across the laser beam cross-section
US7359113B2 (en) 2005-02-02 2008-04-15 Covega Corp. Semiconductor optical amplifier having a non-uniform injection current density
US20090089168A1 (en) * 2007-01-10 2009-04-02 Phyllis Adele Schneck ACE (Alternative Currency Exchange): Alternative Currency Tracking and Mapping System and Method
US8890324B2 (en) * 2010-09-28 2014-11-18 Freescale Semiconductor, Inc. Semiconductor structure having a through substrate via (TSV) and method for forming

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4251780A (en) * 1978-07-03 1981-02-17 Xerox Corporation Stripe offset geometry in injection lasers to achieve transverse mode control

Also Published As

Publication number Publication date
NL7900668A (nl) 1980-05-12
FR2441935A1 (fr) 1980-06-13
IT7923273A0 (it) 1979-06-04
US4359776A (en) 1982-11-16
DE2925648A1 (de) 1980-05-22
DE2925648C2 (it) 1987-12-10
SE7909119L (sv) 1980-05-09
AU4779979A (en) 1980-05-15
GB2033647A (en) 1980-05-21

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