FR2441935A1 - Dispositif pour engendrer ou intensifier un rayonnement electromagnetique coherent, et procede pour la fabrication de ce dispositif - Google Patents

Dispositif pour engendrer ou intensifier un rayonnement electromagnetique coherent, et procede pour la fabrication de ce dispositif

Info

Publication number
FR2441935A1
FR2441935A1 FR7924173A FR7924173A FR2441935A1 FR 2441935 A1 FR2441935 A1 FR 2441935A1 FR 7924173 A FR7924173 A FR 7924173A FR 7924173 A FR7924173 A FR 7924173A FR 2441935 A1 FR2441935 A1 FR 2441935A1
Authority
FR
France
Prior art keywords
intensifying
generating
electromagnetic radiation
coherent electromagnetic
intensification
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7924173A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2441935A1 publication Critical patent/FR2441935A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0654—Single longitudinal mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Light Receiving Elements (AREA)

Abstract

DISPOSITIF SEMI-CONDUCTEUR PERMETTANT D'ENGENDRER OU D'INTENSIFIER UN RAYONNEMENT ELECTROMAGNETIQUE COHERENT ET COMPRENANT UN CORPS SEMI-CONDUCTEUR QUI COMPORTE UNE REGION ACTIVE EN FORME DE BANDE AVEC UNE JONCTION PN PRATIQUEMENT PARALLELE A UNE SURFACE AINSI QUE DES ORGANES DE CONTACT. CE DISPOSITIF EST REMARQUABLE EN CE QUE LA REGION ACTIVE DANS LAQUELLE A LIEU L'INTENSIFICATION DU RAYONNEMENT COMPORTE, LE LONG D'UNE COUPE SUIVANT LA DIRECTION DE SA LONGUEUR ET SUR AU MOINS UNE PARTIE DE CETTE LONGUEUR UNE REGION AVEC UNE VARIATION D'INTENSIFICATION PERIODIQUE DANS LA GAMME DE LONGUEURS D'ONDE DUDIT RAYONNEMENT, ALORS QUE LA PERIODE DE LA VARIATION D'INTENSIFICATION EST AU MOINS EGALE A DIX FOIS LA LONGUEUR D'ONDE DU RAYONNEMENT EMIS OU INTENSIFIE DANS LE MATERIAU SEMI-CONDUCTEUR.
FR7924173A 1978-11-08 1979-09-28 Dispositif pour engendrer ou intensifier un rayonnement electromagnetique coherent, et procede pour la fabrication de ce dispositif Withdrawn FR2441935A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7811085 1978-11-08
NL7900668A NL7900668A (nl) 1978-11-08 1979-01-29 Inrichting voor het opwekken of versterken van coheren- te electromagnetische straling, en werkwijze voor het vervaardigen van de inrichting.

Publications (1)

Publication Number Publication Date
FR2441935A1 true FR2441935A1 (fr) 1980-06-13

Family

ID=26645465

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7924173A Withdrawn FR2441935A1 (fr) 1978-11-08 1979-09-28 Dispositif pour engendrer ou intensifier un rayonnement electromagnetique coherent, et procede pour la fabrication de ce dispositif

Country Status (8)

Country Link
US (1) US4359776A (fr)
AU (1) AU4779979A (fr)
DE (1) DE2925648A1 (fr)
FR (1) FR2441935A1 (fr)
GB (1) GB2033647A (fr)
IT (1) IT1121253B (fr)
NL (1) NL7900668A (fr)
SE (1) SE7909119L (fr)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7908969A (nl) * 1979-12-13 1981-07-16 Philips Nv Halfgeleiderlaser.
JPS5967677A (ja) * 1982-07-01 1984-04-17 Semiconductor Res Found 光集積回路
US4573163A (en) * 1982-09-13 1986-02-25 At&T Bell Laboratories Longitudinal mode stabilized laser
JPH0666509B2 (ja) * 1983-12-14 1994-08-24 株式会社日立製作所 分布帰還型半導体レ−ザ装置
JPS61113293A (ja) * 1984-11-07 1986-05-31 Sharp Corp 半導体レ−ザアレイ装置
US4794346A (en) * 1984-11-21 1988-12-27 Bell Communications Research, Inc. Broadband semiconductor optical amplifier structure
US4689797A (en) * 1985-08-19 1987-08-25 Gte Laboratories Incorporated High power single spatial mode semiconductor laser
US4824747A (en) * 1985-10-21 1989-04-25 General Electric Company Method of forming a variable width channel
US4845014A (en) * 1985-10-21 1989-07-04 Rca Corporation Method of forming a channel
US4837775A (en) * 1985-10-21 1989-06-06 General Electric Company Electro-optic device having a laterally varying region
US4783788A (en) * 1985-12-16 1988-11-08 Lytel Incorporated High power semiconductor lasers
JPS62194237A (ja) * 1986-02-20 1987-08-26 Kyohei Sakuta 光増幅機能を有する３結合導波路光タツプ
US4791648A (en) * 1987-02-04 1988-12-13 Amoco Corporation Laser having a substantially planar waveguide
CA1330242C (fr) * 1987-11-30 1994-06-14 Gte Laboratories Incorporated Systemes de transmission optiques multiplexes a sous-porteuses utilisant la selection des canaux optiques
DE3923354A1 (de) * 1989-07-14 1991-01-24 Licentia Gmbh Halbleiterlaser
JPH04155988A (ja) * 1990-10-19 1992-05-28 Rohm Co Ltd 半導体レーザ
US5627668A (en) * 1992-02-10 1997-05-06 Gte Laboratories Incorporated Subcarrier-multiplexed optical transmission systems using optical channel selection
WO2000046891A1 (fr) * 1999-02-03 2000-08-10 Trumpf Lasertechnik Gmbh Laser muni d'un dispositif pour modifier la repartition de l'intensite de la lumiere laser sur la section transversale du faisceau laser
JP2008529316A (ja) 2005-02-02 2008-07-31 コヴェガ・インコーポレーテッド 不均一な注入電流密度を有する半導体光増幅器
US20090089168A1 (en) * 2007-01-10 2009-04-02 Phyllis Adele Schneck ACE (Alternative Currency Exchange): Alternative Currency Tracking and Mapping System and Method
US8890324B2 (en) * 2010-09-28 2014-11-18 Freescale Semiconductor, Inc. Semiconductor structure having a through substrate via (TSV) and method for forming
DE102019102499A1 (de) * 2019-01-31 2020-08-06 Forschungsverbund Berlin E.V. Vorrichtung zur Erzeugung von Laserstrahlung

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4251780A (en) * 1978-07-03 1981-02-17 Xerox Corporation Stripe offset geometry in injection lasers to achieve transverse mode control

Also Published As

Publication number Publication date
GB2033647A (en) 1980-05-21
DE2925648A1 (de) 1980-05-22
IT7923273A0 (it) 1979-06-04
DE2925648C2 (fr) 1987-12-10
AU4779979A (en) 1980-05-15
IT1121253B (it) 1986-04-02
US4359776A (en) 1982-11-16
SE7909119L (sv) 1980-05-09
NL7900668A (nl) 1980-05-12

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Legal Events

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ST Notification of lapse