NL7900668A - Inrichting voor het opwekken of versterken van coheren- te electromagnetische straling, en werkwijze voor het vervaardigen van de inrichting. - Google Patents

Inrichting voor het opwekken of versterken van coheren- te electromagnetische straling, en werkwijze voor het vervaardigen van de inrichting. Download PDF

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Publication number
NL7900668A
NL7900668A NL7900668A NL7900668A NL7900668A NL 7900668 A NL7900668 A NL 7900668A NL 7900668 A NL7900668 A NL 7900668A NL 7900668 A NL7900668 A NL 7900668A NL 7900668 A NL7900668 A NL 7900668A
Authority
NL
Netherlands
Prior art keywords
active region
semiconductor
semiconductor device
gain
layer
Prior art date
Application number
NL7900668A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL7900668A priority Critical patent/NL7900668A/nl
Priority to IT23273/79A priority patent/IT1121253B/it
Priority to AU47799/79A priority patent/AU4779979A/en
Priority to GB7919893A priority patent/GB2033647A/en
Priority to US06/049,778 priority patent/US4359776A/en
Priority to DE19792925648 priority patent/DE2925648A1/de
Priority to FR7924173A priority patent/FR2441935A1/fr
Priority to SE7909119A priority patent/SE7909119L/xx
Publication of NL7900668A publication Critical patent/NL7900668A/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0654—Single longitudinal mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Light Receiving Elements (AREA)
NL7900668A 1978-11-08 1979-01-29 Inrichting voor het opwekken of versterken van coheren- te electromagnetische straling, en werkwijze voor het vervaardigen van de inrichting. NL7900668A (nl)

Priority Applications (8)

Application Number Priority Date Filing Date Title
NL7900668A NL7900668A (nl) 1978-11-08 1979-01-29 Inrichting voor het opwekken of versterken van coheren- te electromagnetische straling, en werkwijze voor het vervaardigen van de inrichting.
IT23273/79A IT1121253B (it) 1978-11-08 1979-06-04 Dispositivo per la generazione o l'amplificazione di radiazione elettromagnetica coerente e metodo di fabbricazione dello stesso
AU47799/79A AU4779979A (en) 1978-11-08 1979-06-06 Semiconductor device for generating and amplifying coherent radiation
GB7919893A GB2033647A (en) 1978-11-08 1979-06-07 Semiconductor lasers
US06/049,778 US4359776A (en) 1978-11-08 1979-06-18 Device for generating or amplifying coherent electromagnetic radiation, and method of manufacturing the device
DE19792925648 DE2925648A1 (de) 1978-11-08 1979-06-26 Anordnung zum erzeugen oder verstaerken kohaerenter elektromagnetischer strahlung und verfahren zur herstellung der anordnung
FR7924173A FR2441935A1 (fr) 1978-11-08 1979-09-28 Dispositif pour engendrer ou intensifier un rayonnement electromagnetique coherent, et procede pour la fabrication de ce dispositif
SE7909119A SE7909119L (sv) 1978-11-08 1979-11-05 Anordning for alstring eller forsterkning av koherent elektromagnetisk stralning och metod for dess tillverkning

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
NL7811085 1978-11-08
NL7811085 1978-11-08
NL7900668 1979-01-29
NL7900668A NL7900668A (nl) 1978-11-08 1979-01-29 Inrichting voor het opwekken of versterken van coheren- te electromagnetische straling, en werkwijze voor het vervaardigen van de inrichting.

Publications (1)

Publication Number Publication Date
NL7900668A true NL7900668A (nl) 1980-05-12

Family

ID=26645465

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7900668A NL7900668A (nl) 1978-11-08 1979-01-29 Inrichting voor het opwekken of versterken van coheren- te electromagnetische straling, en werkwijze voor het vervaardigen van de inrichting.

Country Status (8)

Country Link
US (1) US4359776A (en, 2012)
AU (1) AU4779979A (en, 2012)
DE (1) DE2925648A1 (en, 2012)
FR (1) FR2441935A1 (en, 2012)
GB (1) GB2033647A (en, 2012)
IT (1) IT1121253B (en, 2012)
NL (1) NL7900668A (en, 2012)
SE (1) SE7909119L (en, 2012)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7908969A (nl) * 1979-12-13 1981-07-16 Philips Nv Halfgeleiderlaser.
JPS5967677A (ja) * 1982-07-01 1984-04-17 Semiconductor Res Found 光集積回路
US4573163A (en) * 1982-09-13 1986-02-25 At&T Bell Laboratories Longitudinal mode stabilized laser
JPH0666509B2 (ja) * 1983-12-14 1994-08-24 株式会社日立製作所 分布帰還型半導体レ−ザ装置
JPS61113293A (ja) * 1984-11-07 1986-05-31 Sharp Corp 半導体レ−ザアレイ装置
US4794346A (en) * 1984-11-21 1988-12-27 Bell Communications Research, Inc. Broadband semiconductor optical amplifier structure
US4689797A (en) * 1985-08-19 1987-08-25 Gte Laboratories Incorporated High power single spatial mode semiconductor laser
US4824747A (en) * 1985-10-21 1989-04-25 General Electric Company Method of forming a variable width channel
US4845014A (en) * 1985-10-21 1989-07-04 Rca Corporation Method of forming a channel
US4837775A (en) * 1985-10-21 1989-06-06 General Electric Company Electro-optic device having a laterally varying region
US4783788A (en) * 1985-12-16 1988-11-08 Lytel Incorporated High power semiconductor lasers
JPS62194237A (ja) * 1986-02-20 1987-08-26 Kyohei Sakuta 光増幅機能を有する３結合導波路光タツプ
US4791648A (en) * 1987-02-04 1988-12-13 Amoco Corporation Laser having a substantially planar waveguide
CA1330242C (en) * 1987-11-30 1994-06-14 Gte Laboratories Incorporated Subcarrier-multiplexed optical transmission systems using optical channel selection
DE3923354A1 (de) * 1989-07-14 1991-01-24 Licentia Gmbh Halbleiterlaser
JPH04155988A (ja) * 1990-10-19 1992-05-28 Rohm Co Ltd 半導体レーザ
US5627668A (en) * 1992-02-10 1997-05-06 Gte Laboratories Incorporated Subcarrier-multiplexed optical transmission systems using optical channel selection
EP1066666B1 (de) * 1999-02-03 2008-08-06 TRUMPF LASERTECHNIK GmbH Laser mit einer einrichtung zur veränderung der verteilung der intensität des laserlichtes über den laserstrahlquerschnitt
US7359113B2 (en) * 2005-02-02 2008-04-15 Covega Corp. Semiconductor optical amplifier having a non-uniform injection current density
US20090089168A1 (en) * 2007-01-10 2009-04-02 Phyllis Adele Schneck ACE (Alternative Currency Exchange): Alternative Currency Tracking and Mapping System and Method
US8890324B2 (en) * 2010-09-28 2014-11-18 Freescale Semiconductor, Inc. Semiconductor structure having a through substrate via (TSV) and method for forming
DE102019102499A1 (de) * 2019-01-31 2020-08-06 Forschungsverbund Berlin E.V. Vorrichtung zur Erzeugung von Laserstrahlung

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4251780A (en) * 1978-07-03 1981-02-17 Xerox Corporation Stripe offset geometry in injection lasers to achieve transverse mode control

Also Published As

Publication number Publication date
GB2033647A (en) 1980-05-21
IT7923273A0 (it) 1979-06-04
DE2925648A1 (de) 1980-05-22
AU4779979A (en) 1980-05-15
IT1121253B (it) 1986-04-02
FR2441935A1 (fr) 1980-06-13
SE7909119L (sv) 1980-05-09
US4359776A (en) 1982-11-16
DE2925648C2 (en, 2012) 1987-12-10

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