DE2856507C2 - - Google Patents

Info

Publication number
DE2856507C2
DE2856507C2 DE2856507A DE2856507A DE2856507C2 DE 2856507 C2 DE2856507 C2 DE 2856507C2 DE 2856507 A DE2856507 A DE 2856507A DE 2856507 A DE2856507 A DE 2856507A DE 2856507 C2 DE2856507 C2 DE 2856507C2
Authority
DE
Germany
Prior art keywords
layer
strip
laser
thickness
gallium arsenide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2856507A
Other languages
German (de)
English (en)
Other versions
DE2856507A1 (de
Inventor
Markus-Christian Dipl.-Ing. 8000 Muenchen De Amann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to DE19782856507 priority Critical patent/DE2856507A1/de
Priority to GB7943609A priority patent/GB2038538B/en
Priority to US06/105,126 priority patent/US4352187A/en
Priority to FR7931266A priority patent/FR2445638B1/fr
Priority to JP17403979A priority patent/JPS5591189A/ja
Publication of DE2856507A1 publication Critical patent/DE2856507A1/de
Priority to JP1985116344U priority patent/JPS6144866U/ja
Application granted granted Critical
Publication of DE2856507C2 publication Critical patent/DE2856507C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE19782856507 1978-12-28 1978-12-28 Halbleiter-laserdiode Granted DE2856507A1 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE19782856507 DE2856507A1 (de) 1978-12-28 1978-12-28 Halbleiter-laserdiode
GB7943609A GB2038538B (en) 1978-12-28 1979-12-18 Semiconductor laser diode
US06/105,126 US4352187A (en) 1978-12-28 1979-12-19 Semiconductor laser diode
FR7931266A FR2445638B1 (fr) 1978-12-28 1979-12-20 Diode laser a semiconducteurs
JP17403979A JPS5591189A (en) 1978-12-28 1979-12-27 Semiconductor laser diode and method of fabricating same
JP1985116344U JPS6144866U (ja) 1978-12-28 1985-07-29 半導体レ−ザ−・ダイオ−ド

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19782856507 DE2856507A1 (de) 1978-12-28 1978-12-28 Halbleiter-laserdiode

Publications (2)

Publication Number Publication Date
DE2856507A1 DE2856507A1 (de) 1980-07-17
DE2856507C2 true DE2856507C2 (enExample) 1989-03-30

Family

ID=6058590

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19782856507 Granted DE2856507A1 (de) 1978-12-28 1978-12-28 Halbleiter-laserdiode

Country Status (5)

Country Link
US (1) US4352187A (enExample)
JP (2) JPS5591189A (enExample)
DE (1) DE2856507A1 (enExample)
FR (1) FR2445638B1 (enExample)
GB (1) GB2038538B (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2488049A1 (fr) * 1980-07-31 1982-02-05 Bouley Jean Source lumineuse a jonction semiconductrice, notamment source-laser, utilisant des diodes schottky, et procede de fabrication
JPS5833885A (ja) * 1981-08-24 1983-02-28 Hitachi Ltd レ−ザ−ダイオ−ド
DE3234389C2 (de) * 1982-09-16 1995-03-09 Siemens Ag Halbleiter-Laserdiode
DE3332398A1 (de) * 1983-09-08 1985-03-28 Standard Elektrik Lorenz Ag, 7000 Stuttgart Multimodenlaser
GB2156585B (en) * 1984-03-16 1987-10-21 Hitachi Ltd Light-emitting device electrode
USRE34378E (en) * 1984-03-16 1993-09-14 Hitachi, Ltd. Light emitting device with improved electrode structure to minimize short circuiting
US4615032A (en) * 1984-07-13 1986-09-30 At&T Bell Laboratories Self-aligned rib-waveguide high power laser
DE3437209A1 (de) * 1984-10-10 1986-04-17 Siemens AG, 1000 Berlin und 8000 München Verbesserung zu einem monomoden-diodenlaser
DE3531734A1 (de) * 1985-09-05 1987-03-12 Siemens Ag Einrichtung zur positionierung eines halbleiterlasers mit selbstjustierender wirkung fuer eine anzukoppelnde glasfaser
DE3534744A1 (de) * 1985-09-28 1987-04-09 Standard Elektrik Lorenz Ag Laservorrichtung mit stabilisierter ausgangsleistung
EP0236713A3 (de) * 1986-02-10 1988-06-29 Siemens Aktiengesellschaft Laserdiode
EP0237812A3 (de) * 1986-03-20 1988-06-29 Siemens Aktiengesellschaft Halbleiterlaser-Array mit gebündelter Abstrahlung
DE3612695A1 (de) * 1986-04-15 1987-10-22 Siemens Ag Halbleiter-laserdiode mit qualitativ verbesserter resonator-spiegelflaeche
FR2606223B1 (fr) * 1986-10-29 1996-03-01 Seiko Epson Corp Laser a semiconducteur et son procede de fabrication
JPS63306689A (ja) * 1987-05-22 1988-12-14 シーメンス、アクチエンゲゼルシヤフト 横結合レーザーダイオードアレー
JPH0231487A (ja) * 1988-07-20 1990-02-01 Mitsubishi Electric Corp 半導体レーザ装置とその製造方法
EP0383958B1 (de) * 1989-02-15 1993-06-02 Siemens Aktiengesellschaft Abstimmbarer Halbleiterlaser
NL8900748A (nl) * 1989-03-28 1990-10-16 Philips Nv Straling-emitterende halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting.
US6859277B2 (en) * 2002-08-27 2005-02-22 Particle Measuring Systems, Inc. Particle counter with strip laser diode
DE102004052857B4 (de) * 2004-10-26 2006-09-07 Forschungsverbund Berlin E.V. Optisches Element und Verfahren zu dessen Herstellung
DE102015116865B4 (de) 2015-10-05 2025-07-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Halbleiterchips und Halbleiterchip

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5071281A (enExample) * 1973-10-26 1975-06-13
JPS5286093A (en) * 1976-01-12 1977-07-16 Hitachi Ltd Striped semiconductor laser
US4206468A (en) * 1976-05-11 1980-06-03 Thomson-Csf Contacting structure on a semiconductor arrangement
FR2351504A1 (fr) * 1976-05-11 1977-12-09 Thomson Csf Nouveau dispositif de prise de contact sur un ensemble semi-conducteur
US4099305A (en) * 1977-03-14 1978-07-11 Bell Telephone Laboratories, Incorporated Fabrication of mesa devices by MBE growth over channeled substrates
US4169997A (en) * 1977-05-06 1979-10-02 Bell Telephone Laboratories, Incorporated Lateral current confinement in junction lasers
JPH0571281A (ja) * 1991-09-12 1993-03-23 Naka Ind Ltd 避難用梯子

Also Published As

Publication number Publication date
DE2856507A1 (de) 1980-07-17
FR2445638A1 (fr) 1980-07-25
US4352187A (en) 1982-09-28
FR2445638B1 (fr) 1986-02-21
GB2038538A (en) 1980-07-23
GB2038538B (en) 1983-02-16
JPS5591189A (en) 1980-07-10
JPS6144866U (ja) 1986-03-25

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8125 Change of the main classification

Ipc: H01S 3/19

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee