DE69404367T2 - Planar-Vergrabene-Heterostruktur-Laserdiode mit zwei Kanälen und niedrigem Leckstrom - Google Patents

Planar-Vergrabene-Heterostruktur-Laserdiode mit zwei Kanälen und niedrigem Leckstrom

Info

Publication number
DE69404367T2
DE69404367T2 DE69404367T DE69404367T DE69404367T2 DE 69404367 T2 DE69404367 T2 DE 69404367T2 DE 69404367 T DE69404367 T DE 69404367T DE 69404367 T DE69404367 T DE 69404367T DE 69404367 T2 DE69404367 T2 DE 69404367T2
Authority
DE
Germany
Prior art keywords
channels
laser diode
leakage current
low leakage
buried heterostructure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69404367T
Other languages
English (en)
Other versions
DE69404367D1 (de
Inventor
Tomoko Ishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP5066369A external-priority patent/JP2793464B2/ja
Priority claimed from JP6634393A external-priority patent/JPH06283799A/ja
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69404367D1 publication Critical patent/DE69404367D1/de
Application granted granted Critical
Publication of DE69404367T2 publication Critical patent/DE69404367T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3434—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer comprising at least both As and P as V-compounds

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE69404367T 1993-03-25 1994-03-21 Planar-Vergrabene-Heterostruktur-Laserdiode mit zwei Kanälen und niedrigem Leckstrom Expired - Fee Related DE69404367T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5066369A JP2793464B2 (ja) 1993-03-25 1993-03-25 半導体レーザ
JP6634393A JPH06283799A (ja) 1993-03-25 1993-03-25 半導体レーザ

Publications (2)

Publication Number Publication Date
DE69404367D1 DE69404367D1 (de) 1997-08-28
DE69404367T2 true DE69404367T2 (de) 1998-02-26

Family

ID=26407545

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69404367T Expired - Fee Related DE69404367T2 (de) 1993-03-25 1994-03-21 Planar-Vergrabene-Heterostruktur-Laserdiode mit zwei Kanälen und niedrigem Leckstrom

Country Status (3)

Country Link
US (1) US5400355A (de)
EP (1) EP0621665B1 (de)
DE (1) DE69404367T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5966396A (en) * 1996-07-26 1999-10-12 Kabushiki Kaisha Toshiba Gallium nitride-based compound semiconductor laser and method of manufacturing the same
GB2320610A (en) * 1996-12-21 1998-06-24 Sharp Kk laser device
JP2000323789A (ja) * 1999-05-11 2000-11-24 Nec Corp 窓型半導体レーザおよびその製造方法
EP1271722A1 (de) * 2001-06-25 2003-01-02 Agilent Technologies, Inc. (a Delaware corporation) Halbleiterlaserstruktur und Herstellungsverfahren
JP4627132B2 (ja) * 2001-09-13 2011-02-09 シャープ株式会社 半導体レーザ装置および光ディスク記録再生装置
GB0126642D0 (en) * 2001-11-06 2002-01-02 Denselight Semiconductors Pte Design of current blocking structure to improve semiconductor laser performance

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0083697B1 (de) * 1981-10-19 1987-09-09 Nec Corporation Zweikanaliger Planar-vergrabene-Heterostruktur-Laser
JPS59200484A (ja) * 1983-04-28 1984-11-13 Nec Corp 半導体レ−ザ
US4805178A (en) * 1986-03-28 1989-02-14 American Telephone And Telegraph Company, At&T Bell Laboratories Preservation of surface features on semiconductor surfaces
NL8602204A (nl) * 1986-09-01 1988-04-05 Philips Nv Dfb laser met anti-reflectielaag.
NL8603009A (nl) * 1986-11-27 1988-06-16 Philips Nv Halfgeleiderlaser en werkwijze ter vervaardiging daarvan.
JPS63144589A (ja) * 1986-12-09 1988-06-16 Sharp Corp 半導体レ−ザ素子
NL8702233A (nl) * 1987-09-18 1989-04-17 Philips Nv Dcpbh laser met goede temperatuurstabiliteit.
JPH027488A (ja) * 1988-06-24 1990-01-11 Nec Corp 埋め込みヘテロ構造半導体レーザ

Also Published As

Publication number Publication date
EP0621665B1 (de) 1997-07-23
DE69404367D1 (de) 1997-08-28
US5400355A (en) 1995-03-21
EP0621665A2 (de) 1994-10-26
EP0621665A3 (de) 1995-01-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee