DE69418421D1 - Vielfachlaser mit gestapelten aktiven Gebieten für mehrfarbige Emission - Google Patents

Vielfachlaser mit gestapelten aktiven Gebieten für mehrfarbige Emission

Info

Publication number
DE69418421D1
DE69418421D1 DE69418421T DE69418421T DE69418421D1 DE 69418421 D1 DE69418421 D1 DE 69418421D1 DE 69418421 T DE69418421 T DE 69418421T DE 69418421 T DE69418421 T DE 69418421T DE 69418421 D1 DE69418421 D1 DE 69418421D1
Authority
DE
Germany
Prior art keywords
active areas
multiple laser
stacked active
colored emission
colored
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69418421T
Other languages
English (en)
Other versions
DE69418421T2 (de
Inventor
Robert L Thornton
Kevin J Beernink
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Application granted granted Critical
Publication of DE69418421D1 publication Critical patent/DE69418421D1/de
Publication of DE69418421T2 publication Critical patent/DE69418421T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/209—Methods of obtaining the confinement using special etching techniques special etch stop layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32316—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm comprising only (Al)GaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3428—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer orientation perpendicular to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69418421T 1993-11-02 1994-11-02 Vielfachlaser mit gestapelten aktiven Gebieten für mehrfarbige Emission Expired - Lifetime DE69418421T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/146,651 US5386428A (en) 1993-11-02 1993-11-02 Stacked active region laser array for multicolor emissions

Publications (2)

Publication Number Publication Date
DE69418421D1 true DE69418421D1 (de) 1999-06-17
DE69418421T2 DE69418421T2 (de) 1999-10-28

Family

ID=22518350

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69418421T Expired - Lifetime DE69418421T2 (de) 1993-11-02 1994-11-02 Vielfachlaser mit gestapelten aktiven Gebieten für mehrfarbige Emission

Country Status (4)

Country Link
US (1) US5386428A (de)
EP (1) EP0651478B1 (de)
JP (1) JP3386251B2 (de)
DE (1) DE69418421T2 (de)

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TW291585B (de) * 1994-07-04 1996-11-21 Mitsubishi Chem Corp
US5610095A (en) * 1994-08-31 1997-03-11 Lucent Technologies Inc. Monolithically integrated circuits having dielectrically isolated, electrically controlled optical devices and process for fabricating the same
JPH08222815A (ja) * 1994-12-13 1996-08-30 Mitsubishi Electric Corp 半導体レーザ装置の製造方法、及び半導体レーザ装置
US5778077A (en) * 1995-09-13 1998-07-07 Davidson; Dennis M. Automatic volume adjusting device and method
US5740190A (en) * 1996-05-23 1998-04-14 Schwartz Electro-Optics, Inc. Three-color coherent light system
AU4643697A (en) * 1996-06-13 1998-01-14 Board Of Regents, The University Of Texas System Vertical-cavity surface-emitting laser diode array with wavelength control through lateral index-confinement and longitudinal resonance
US5963568A (en) * 1996-07-01 1999-10-05 Xerox Corporation Multiple wavelength, surface emitting laser with broad bandwidth distributed Bragg reflectors
US5699375A (en) * 1996-07-08 1997-12-16 Xerox Corporation Multiple wavelength, surface emitting laser with broad bandwidth distributed Bragg reflectors
US5742631A (en) * 1996-07-26 1998-04-21 Xerox Corporation Independently-addressable monolithic laser arrays
JPH10154852A (ja) * 1996-09-24 1998-06-09 Minolta Co Ltd 積層型マルチ半導体レーザ素子及びこの半導体レーザ素子を用いたレーザビーム走査光学装置
US5764676A (en) * 1996-09-26 1998-06-09 Xerox Corporation Transversely injected multiple wavelength diode laser array formed by layer disordering
KR100195137B1 (ko) * 1996-10-24 1999-06-15 윤종용 호환형 광픽업장치
US5886370A (en) * 1997-05-29 1999-03-23 Xerox Corporation Edge-emitting semiconductor lasers
JP4117854B2 (ja) * 1997-06-20 2008-07-16 シャープ株式会社 導波路型光集積回路素子及びその製造方法
US5917847A (en) * 1997-09-26 1999-06-29 Xerox Corporation Independently addressable semiconductor laser arrays with buried selectively oxidized native oxide apertures
US5999553A (en) * 1997-11-25 1999-12-07 Xerox Corporation Monolithic red/ir side by side laser fabricated from a stacked dual laser structure by ion implantation channel
US6058124A (en) * 1997-11-25 2000-05-02 Xerox Corporation Monolithic independently addressable Red/IR side by side laser
US5915165A (en) * 1997-12-15 1999-06-22 Xerox Corporation Method of manufacturing vertical cavity surface emitting semiconductor lasers using intermixing and oxidation
JP4902044B2 (ja) * 1999-09-24 2012-03-21 シャープ株式会社 半導体レーザ装置、光伝送装置、光伝送システム、電子機器、制御装置、接続コネクタ、通信装置、ならびに光伝送方法、データ送受信方法
JP2001244570A (ja) * 2000-02-29 2001-09-07 Sony Corp 半導体レーザ、レーザカプラおよびデータ再生装置、データ記録装置ならびに半導体レーザの製造方法
DE10108079A1 (de) * 2000-05-30 2002-09-12 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
US6649940B2 (en) 2001-06-29 2003-11-18 The Board Of Trustees Of The University Of Illinois Separate lateral confinement quantum well laser
US6690698B2 (en) * 2001-12-25 2004-02-10 Fuji Photo Film Co., Ltd. Semiconductor laser device including arrow structure precisely formed to suppress P-As interdiffusion and Al oxidation
US6845116B2 (en) * 2002-10-24 2005-01-18 Wisconsin Alumni Research Foundation Narrow lateral waveguide laser
KR100541110B1 (ko) * 2004-06-25 2006-01-11 삼성전기주식회사 다파장 반도체 레이저 제조방법
KR100541111B1 (ko) * 2004-06-25 2006-01-11 삼성전기주식회사 다파장 반도체 레이저 제조방법
JP4327679B2 (ja) * 2004-07-30 2009-09-09 パナソニック株式会社 半導体レーザ装置およびその製造方法
JP2008515201A (ja) * 2004-09-23 2008-05-08 セミネックス・コーポレーション 高エネルギー赤外半導体ダイオード発光デバイス
US7310358B2 (en) * 2004-12-17 2007-12-18 Palo Alto Research Center Incorporated Semiconductor lasers
DE102007026925A1 (de) * 2007-02-28 2008-09-04 Osram Opto Semiconductors Gmbh Integrierte Trapezlaseranordnung und Verfahren zu deren Herstellung
US7623560B2 (en) 2007-09-27 2009-11-24 Ostendo Technologies, Inc. Quantum photonic imagers and methods of fabrication thereof
JP2018516466A (ja) 2015-06-05 2018-06-21 オステンド・テクノロジーズ・インコーポレーテッド 多重活性層へのキャリア注入を選定した発光構造
US10396240B2 (en) 2015-10-08 2019-08-27 Ostendo Technologies, Inc. III-nitride semiconductor light emitting device having amber-to-red light emission (>600 nm) and a method for making same
GB2586580B (en) * 2019-08-06 2022-01-12 Plessey Semiconductors Ltd LED array and method of forming a LED array
KR102440071B1 (ko) * 2020-10-16 2022-09-05 (주)큐에스아이 반도체 레이저 다이오드 소자 및 그 제조 방법

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FR2605801B1 (fr) * 1986-10-23 1989-03-03 Menigaux Louis Procede de fabrication d'une structure semi-conductrice susceptible d'effet laser multi-longueurs d'onde, et dispositif obtenu
DE3850139T2 (de) * 1987-02-27 1994-10-06 Canon Kk Halbleiterlaser mit variabler Oszillationswellenlänge.
JPH01304793A (ja) * 1988-06-01 1989-12-08 Mitsubishi Electric Corp 半導体レーザ装置の製造方法
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US5212706A (en) * 1991-12-03 1993-05-18 University Of Connecticut Laser diode assembly with tunnel junctions and providing multiple beams

Also Published As

Publication number Publication date
EP0651478A1 (de) 1995-05-03
US5386428A (en) 1995-01-31
EP0651478B1 (de) 1999-05-12
DE69418421T2 (de) 1999-10-28
JPH07162102A (ja) 1995-06-23
JP3386251B2 (ja) 2003-03-17

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