DE2846486C2 - Schmelzepitaxie-Verfahren und -Vorrichtung - Google Patents
Schmelzepitaxie-Verfahren und -VorrichtungInfo
- Publication number
- DE2846486C2 DE2846486C2 DE2846486A DE2846486A DE2846486C2 DE 2846486 C2 DE2846486 C2 DE 2846486C2 DE 2846486 A DE2846486 A DE 2846486A DE 2846486 A DE2846486 A DE 2846486A DE 2846486 C2 DE2846486 C2 DE 2846486C2
- Authority
- DE
- Germany
- Prior art keywords
- melt
- substrate
- plate
- plates
- epitaxy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 20
- 238000000407 epitaxy Methods 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims description 36
- 239000000155 melt Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims 2
- 210000003298 dental enamel Anatomy 0.000 claims 1
- 238000011161 development Methods 0.000 claims 1
- 230000018109 developmental process Effects 0.000 claims 1
- 229910001338 liquidmetal Inorganic materials 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 1
- 241001235534 Graphis <ascomycete fungus> Species 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012803 melt mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/067—Boots or containers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2846486A DE2846486C2 (de) | 1978-10-25 | 1978-10-25 | Schmelzepitaxie-Verfahren und -Vorrichtung |
| IT26633/79A IT1124629B (it) | 1978-10-25 | 1979-10-19 | Dispositivo e procedimento per epitassia a fusione |
| FR7926234A FR2439827B1 (fr) | 1978-10-25 | 1979-10-23 | Dispositif et procede d'epitaxie par fusion |
| JP13752679A JPS5559717A (en) | 1978-10-25 | 1979-10-24 | Device for growing molten epitaxial growth and method of using same |
| GB7936839A GB2037181B (en) | 1978-10-25 | 1979-10-24 | Process and apparatus for melt epitaxy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2846486A DE2846486C2 (de) | 1978-10-25 | 1978-10-25 | Schmelzepitaxie-Verfahren und -Vorrichtung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2846486A1 DE2846486A1 (de) | 1980-04-30 |
| DE2846486C2 true DE2846486C2 (de) | 1981-09-24 |
Family
ID=6053104
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2846486A Expired DE2846486C2 (de) | 1978-10-25 | 1978-10-25 | Schmelzepitaxie-Verfahren und -Vorrichtung |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5559717A (enrdf_load_stackoverflow) |
| DE (1) | DE2846486C2 (enrdf_load_stackoverflow) |
| FR (1) | FR2439827B1 (enrdf_load_stackoverflow) |
| GB (1) | GB2037181B (enrdf_load_stackoverflow) |
| IT (1) | IT1124629B (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0482991U (enrdf_load_stackoverflow) * | 1990-11-29 | 1992-07-20 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3664294A (en) * | 1970-01-29 | 1972-05-23 | Fairchild Camera Instr Co | Push-pull structure for solution epitaxial growth of iii{14 v compounds |
| US3899371A (en) * | 1973-06-25 | 1975-08-12 | Rca Corp | Method of forming PN junctions by liquid phase epitaxy |
| DE2437895C2 (de) * | 1973-08-07 | 1983-01-05 | Siemens AG, 1000 Berlin und 8000 München | Flüssigphasen-Epitaxieverfahren |
| DE2354866B2 (de) * | 1973-11-02 | 1975-09-04 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum epitaktischen Abscheiden von Halbleitermaterial |
-
1978
- 1978-10-25 DE DE2846486A patent/DE2846486C2/de not_active Expired
-
1979
- 1979-10-19 IT IT26633/79A patent/IT1124629B/it active
- 1979-10-23 FR FR7926234A patent/FR2439827B1/fr not_active Expired
- 1979-10-24 JP JP13752679A patent/JPS5559717A/ja active Granted
- 1979-10-24 GB GB7936839A patent/GB2037181B/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| IT1124629B (it) | 1986-05-07 |
| JPH023292B2 (enrdf_load_stackoverflow) | 1990-01-23 |
| FR2439827B1 (fr) | 1985-06-14 |
| GB2037181B (en) | 1982-08-11 |
| FR2439827A1 (fr) | 1980-05-23 |
| DE2846486A1 (de) | 1980-04-30 |
| JPS5559717A (en) | 1980-05-06 |
| GB2037181A (en) | 1980-07-09 |
| IT7926633A0 (it) | 1979-10-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OAP | Request for examination filed | ||
| OD | Request for examination | ||
| D2 | Grant after examination | ||
| 8339 | Ceased/non-payment of the annual fee |