GB2037181B - Process and apparatus for melt epitaxy - Google Patents

Process and apparatus for melt epitaxy

Info

Publication number
GB2037181B
GB2037181B GB7936839A GB7936839A GB2037181B GB 2037181 B GB2037181 B GB 2037181B GB 7936839 A GB7936839 A GB 7936839A GB 7936839 A GB7936839 A GB 7936839A GB 2037181 B GB2037181 B GB 2037181B
Authority
GB
United Kingdom
Prior art keywords
epitaxy
melt
melt epitaxy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7936839A
Other languages
English (en)
Other versions
GB2037181A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB2037181A publication Critical patent/GB2037181A/en
Application granted granted Critical
Publication of GB2037181B publication Critical patent/GB2037181B/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/067—Boots or containers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
GB7936839A 1978-10-25 1979-10-24 Process and apparatus for melt epitaxy Expired GB2037181B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2846486A DE2846486C2 (de) 1978-10-25 1978-10-25 Schmelzepitaxie-Verfahren und -Vorrichtung

Publications (2)

Publication Number Publication Date
GB2037181A GB2037181A (en) 1980-07-09
GB2037181B true GB2037181B (en) 1982-08-11

Family

ID=6053104

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7936839A Expired GB2037181B (en) 1978-10-25 1979-10-24 Process and apparatus for melt epitaxy

Country Status (5)

Country Link
JP (1) JPS5559717A (enrdf_load_stackoverflow)
DE (1) DE2846486C2 (enrdf_load_stackoverflow)
FR (1) FR2439827B1 (enrdf_load_stackoverflow)
GB (1) GB2037181B (enrdf_load_stackoverflow)
IT (1) IT1124629B (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0482991U (enrdf_load_stackoverflow) * 1990-11-29 1992-07-20

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3664294A (en) * 1970-01-29 1972-05-23 Fairchild Camera Instr Co Push-pull structure for solution epitaxial growth of iii{14 v compounds
US3899371A (en) * 1973-06-25 1975-08-12 Rca Corp Method of forming PN junctions by liquid phase epitaxy
DE2437895C2 (de) * 1973-08-07 1983-01-05 Siemens AG, 1000 Berlin und 8000 München Flüssigphasen-Epitaxieverfahren
DE2354866B2 (de) * 1973-11-02 1975-09-04 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum epitaktischen Abscheiden von Halbleitermaterial

Also Published As

Publication number Publication date
FR2439827A1 (fr) 1980-05-23
DE2846486A1 (de) 1980-04-30
DE2846486C2 (de) 1981-09-24
FR2439827B1 (fr) 1985-06-14
GB2037181A (en) 1980-07-09
IT1124629B (it) 1986-05-07
IT7926633A0 (it) 1979-10-19
JPS5559717A (en) 1980-05-06
JPH023292B2 (enrdf_load_stackoverflow) 1990-01-23

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GB2037181B (en) Process and apparatus for melt epitaxy

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee