JPH023292B2 - - Google Patents

Info

Publication number
JPH023292B2
JPH023292B2 JP13752679A JP13752679A JPH023292B2 JP H023292 B2 JPH023292 B2 JP H023292B2 JP 13752679 A JP13752679 A JP 13752679A JP 13752679 A JP13752679 A JP 13752679A JP H023292 B2 JPH023292 B2 JP H023292B2
Authority
JP
Japan
Prior art keywords
melt
substrate
plates
plate
gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP13752679A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5559717A (en
Inventor
Engenhaisutaa Ieruku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS5559717A publication Critical patent/JPS5559717A/ja
Publication of JPH023292B2 publication Critical patent/JPH023292B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/067—Boots or containers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
JP13752679A 1978-10-25 1979-10-24 Device for growing molten epitaxial growth and method of using same Granted JPS5559717A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2846486A DE2846486C2 (de) 1978-10-25 1978-10-25 Schmelzepitaxie-Verfahren und -Vorrichtung

Publications (2)

Publication Number Publication Date
JPS5559717A JPS5559717A (en) 1980-05-06
JPH023292B2 true JPH023292B2 (enrdf_load_stackoverflow) 1990-01-23

Family

ID=6053104

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13752679A Granted JPS5559717A (en) 1978-10-25 1979-10-24 Device for growing molten epitaxial growth and method of using same

Country Status (5)

Country Link
JP (1) JPS5559717A (enrdf_load_stackoverflow)
DE (1) DE2846486C2 (enrdf_load_stackoverflow)
FR (1) FR2439827B1 (enrdf_load_stackoverflow)
GB (1) GB2037181B (enrdf_load_stackoverflow)
IT (1) IT1124629B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0482991U (enrdf_load_stackoverflow) * 1990-11-29 1992-07-20

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3664294A (en) * 1970-01-29 1972-05-23 Fairchild Camera Instr Co Push-pull structure for solution epitaxial growth of iii{14 v compounds
US3899371A (en) * 1973-06-25 1975-08-12 Rca Corp Method of forming PN junctions by liquid phase epitaxy
DE2437895C2 (de) * 1973-08-07 1983-01-05 Siemens AG, 1000 Berlin und 8000 München Flüssigphasen-Epitaxieverfahren
DE2354866B2 (de) * 1973-11-02 1975-09-04 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum epitaktischen Abscheiden von Halbleitermaterial

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0482991U (enrdf_load_stackoverflow) * 1990-11-29 1992-07-20

Also Published As

Publication number Publication date
IT1124629B (it) 1986-05-07
FR2439827B1 (fr) 1985-06-14
GB2037181B (en) 1982-08-11
FR2439827A1 (fr) 1980-05-23
DE2846486A1 (de) 1980-04-30
DE2846486C2 (de) 1981-09-24
JPS5559717A (en) 1980-05-06
GB2037181A (en) 1980-07-09
IT7926633A0 (it) 1979-10-19

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