JPS5559717A - Device for growing molten epitaxial growth and method of using same - Google Patents

Device for growing molten epitaxial growth and method of using same

Info

Publication number
JPS5559717A
JPS5559717A JP13752679A JP13752679A JPS5559717A JP S5559717 A JPS5559717 A JP S5559717A JP 13752679 A JP13752679 A JP 13752679A JP 13752679 A JP13752679 A JP 13752679A JP S5559717 A JPS5559717 A JP S5559717A
Authority
JP
Japan
Prior art keywords
same
epitaxial growth
growing
molten
growing molten
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13752679A
Other languages
Japanese (ja)
Other versions
JPH023292B2 (en
Inventor
Engenhaisutaa Ieruku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS5559717A publication Critical patent/JPS5559717A/en
Publication of JPH023292B2 publication Critical patent/JPH023292B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/067—Boots or containers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
JP13752679A 1978-10-25 1979-10-24 Device for growing molten epitaxial growth and method of using same Granted JPS5559717A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2846486A DE2846486C2 (en) 1978-10-25 1978-10-25 Melt epitaxy method and apparatus

Publications (2)

Publication Number Publication Date
JPS5559717A true JPS5559717A (en) 1980-05-06
JPH023292B2 JPH023292B2 (en) 1990-01-23

Family

ID=6053104

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13752679A Granted JPS5559717A (en) 1978-10-25 1979-10-24 Device for growing molten epitaxial growth and method of using same

Country Status (5)

Country Link
JP (1) JPS5559717A (en)
DE (1) DE2846486C2 (en)
FR (1) FR2439827B1 (en)
GB (1) GB2037181B (en)
IT (1) IT1124629B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0482991U (en) * 1990-11-29 1992-07-20

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3664294A (en) * 1970-01-29 1972-05-23 Fairchild Camera Instr Co Push-pull structure for solution epitaxial growth of iii{14 v compounds
US3899371A (en) * 1973-06-25 1975-08-12 Rca Corp Method of forming PN junctions by liquid phase epitaxy
DE2437895C2 (en) * 1973-08-07 1983-01-05 Siemens AG, 1000 Berlin und 8000 München Liquid phase epitaxy process
DE2354866B2 (en) * 1973-11-02 1975-09-04 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Process for the epitaxial deposition of semiconductor material

Also Published As

Publication number Publication date
IT7926633A0 (en) 1979-10-19
DE2846486A1 (en) 1980-04-30
IT1124629B (en) 1986-05-07
JPH023292B2 (en) 1990-01-23
FR2439827A1 (en) 1980-05-23
GB2037181A (en) 1980-07-09
DE2846486C2 (en) 1981-09-24
FR2439827B1 (en) 1985-06-14
GB2037181B (en) 1982-08-11

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