JPH0322052B2 - - Google Patents
Info
- Publication number
- JPH0322052B2 JPH0322052B2 JP56159589A JP15958981A JPH0322052B2 JP H0322052 B2 JPH0322052 B2 JP H0322052B2 JP 56159589 A JP56159589 A JP 56159589A JP 15958981 A JP15958981 A JP 15958981A JP H0322052 B2 JPH0322052 B2 JP H0322052B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- growth
- solution
- compound
- boat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56159589A JPS5860534A (ja) | 1981-10-06 | 1981-10-06 | 半導体結晶の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56159589A JPS5860534A (ja) | 1981-10-06 | 1981-10-06 | 半導体結晶の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5860534A JPS5860534A (ja) | 1983-04-11 |
JPH0322052B2 true JPH0322052B2 (enrdf_load_stackoverflow) | 1991-03-26 |
Family
ID=15697004
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56159589A Granted JPS5860534A (ja) | 1981-10-06 | 1981-10-06 | 半導体結晶の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5860534A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112825349B (zh) * | 2019-11-20 | 2022-05-17 | 郑州宇通集团有限公司 | 复合正极极片、锂二次电池 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4870473A (enrdf_load_stackoverflow) * | 1971-12-23 | 1973-09-25 |
-
1981
- 1981-10-06 JP JP56159589A patent/JPS5860534A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5860534A (ja) | 1983-04-11 |
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