JPS5860534A - 半導体結晶の製造方法 - Google Patents

半導体結晶の製造方法

Info

Publication number
JPS5860534A
JPS5860534A JP56159589A JP15958981A JPS5860534A JP S5860534 A JPS5860534 A JP S5860534A JP 56159589 A JP56159589 A JP 56159589A JP 15958981 A JP15958981 A JP 15958981A JP S5860534 A JPS5860534 A JP S5860534A
Authority
JP
Japan
Prior art keywords
growth
solution
substrate
compound
liquid phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56159589A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0322052B2 (enrdf_load_stackoverflow
Inventor
Kazuo Nakajima
一雄 中嶋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56159589A priority Critical patent/JPS5860534A/ja
Publication of JPS5860534A publication Critical patent/JPS5860534A/ja
Publication of JPH0322052B2 publication Critical patent/JPH0322052B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP56159589A 1981-10-06 1981-10-06 半導体結晶の製造方法 Granted JPS5860534A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56159589A JPS5860534A (ja) 1981-10-06 1981-10-06 半導体結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56159589A JPS5860534A (ja) 1981-10-06 1981-10-06 半導体結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS5860534A true JPS5860534A (ja) 1983-04-11
JPH0322052B2 JPH0322052B2 (enrdf_load_stackoverflow) 1991-03-26

Family

ID=15697004

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56159589A Granted JPS5860534A (ja) 1981-10-06 1981-10-06 半導体結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS5860534A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112825349A (zh) * 2019-11-20 2021-05-21 郑州宇通集团有限公司 复合正极极片、锂二次电池

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4870473A (enrdf_load_stackoverflow) * 1971-12-23 1973-09-25

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4870473A (enrdf_load_stackoverflow) * 1971-12-23 1973-09-25

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112825349A (zh) * 2019-11-20 2021-05-21 郑州宇通集团有限公司 复合正极极片、锂二次电池
CN112825349B (zh) * 2019-11-20 2022-05-17 郑州宇通集团有限公司 复合正极极片、锂二次电池

Also Published As

Publication number Publication date
JPH0322052B2 (enrdf_load_stackoverflow) 1991-03-26

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