DE2806492A1 - Halbleiterbauelement und verfahren zu dessen herstellung - Google Patents

Halbleiterbauelement und verfahren zu dessen herstellung

Info

Publication number
DE2806492A1
DE2806492A1 DE19782806492 DE2806492A DE2806492A1 DE 2806492 A1 DE2806492 A1 DE 2806492A1 DE 19782806492 DE19782806492 DE 19782806492 DE 2806492 A DE2806492 A DE 2806492A DE 2806492 A1 DE2806492 A1 DE 2806492A1
Authority
DE
Germany
Prior art keywords
layer
passivation
silicon dioxide
particles
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19782806492
Other languages
German (de)
English (en)
Inventor
Walter Arthur Hicinbothem
Ming Liang Tarng
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE2806492A1 publication Critical patent/DE2806492A1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3

Landscapes

  • Formation Of Insulating Films (AREA)
  • Photovoltaic Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE19782806492 1977-02-24 1978-02-16 Halbleiterbauelement und verfahren zu dessen herstellung Ceased DE2806492A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US77174977A 1977-02-24 1977-02-24

Publications (1)

Publication Number Publication Date
DE2806492A1 true DE2806492A1 (de) 1978-08-31

Family

ID=25092854

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19782806492 Ceased DE2806492A1 (de) 1977-02-24 1978-02-16 Halbleiterbauelement und verfahren zu dessen herstellung

Country Status (10)

Country Link
JP (1) JPS53105979A (https=)
BE (1) BE864271A (https=)
DE (1) DE2806492A1 (https=)
FR (1) FR2382095B1 (https=)
GB (1) GB1552760A (https=)
IN (1) IN147578B (https=)
IT (1) IT1092729B (https=)
PL (1) PL117841B1 (https=)
SE (1) SE7801092L (https=)
YU (1) YU42276B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3021175A1 (de) * 1980-06-04 1981-12-10 Siemens AG, 1000 Berlin und 8000 München Verfahren zum passivieren von siliciumbauelementen
FR2487576A1 (fr) * 1980-07-24 1982-01-29 Thomson Csf Procede de fabrication de diodes mesa glassivees
US4344985A (en) 1981-03-27 1982-08-17 Rca Corporation Method of passivating a semiconductor device with a multi-layer passivant system by thermally growing a layer of oxide on an oxygen doped polycrystalline silicon layer
US4420765A (en) 1981-05-29 1983-12-13 Rca Corporation Multi-layer passivant system
JPS60208886A (ja) * 1984-03-31 1985-10-21 株式会社東芝 電子部品の製造方法
US4826733A (en) * 1986-12-03 1989-05-02 Dow Corning Corporation Sin-containing coatings for electronic devices
FR2625839B1 (fr) * 1988-01-13 1991-04-26 Sgs Thomson Microelectronics Procede de passivation d'un circuit integre

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2513459A1 (de) * 1974-03-30 1975-10-09 Sony Corp Halbleiteranordnung und verfahren zu ihrer herstellung
DE2513945A1 (de) * 1974-04-19 1975-10-30 Rca Corp Verfahren zum passivieren der oberflaechen von halbleiterbauteilen
DE2600321A1 (de) * 1975-01-16 1976-07-22 Philips Nv Verfahren zur herstellung von halbleiteranordnungen, bei dem auf eine halbleiterscheibe ein glasueberzug angebracht wird, und durch dieses verfahren hergestellte halbleiteranordnungen

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1250099A (https=) * 1969-04-14 1971-10-20
JPS6022497B2 (ja) * 1974-10-26 1985-06-03 ソニー株式会社 半導体装置
JPS6041458B2 (ja) * 1975-04-21 1985-09-17 ソニー株式会社 半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2513459A1 (de) * 1974-03-30 1975-10-09 Sony Corp Halbleiteranordnung und verfahren zu ihrer herstellung
DE2513945A1 (de) * 1974-04-19 1975-10-30 Rca Corp Verfahren zum passivieren der oberflaechen von halbleiterbauteilen
DE2600321A1 (de) * 1975-01-16 1976-07-22 Philips Nv Verfahren zur herstellung von halbleiteranordnungen, bei dem auf eine halbleiterscheibe ein glasueberzug angebracht wird, und durch dieses verfahren hergestellte halbleiteranordnungen

Also Published As

Publication number Publication date
BE864271A (fr) 1978-06-16
GB1552760A (en) 1979-09-19
FR2382095B1 (fr) 1985-10-18
JPS53105979A (en) 1978-09-14
IT1092729B (it) 1985-07-12
PL117841B1 (en) 1981-08-31
SE7801092L (sv) 1978-08-25
IT7819175A0 (it) 1978-01-11
IN147578B (https=) 1980-04-19
PL204821A1 (pl) 1978-11-06
YU19278A (en) 1982-06-30
FR2382095A1 (fr) 1978-09-22
JPS5626981B2 (https=) 1981-06-22
YU42276B (en) 1988-08-31

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8131 Rejection