DE2737521B2 - Verfahren zur Herstellung eines Pulvers von - Google Patents
Verfahren zur Herstellung eines Pulvers vonInfo
- Publication number
- DE2737521B2 DE2737521B2 DE2737521A DE2737521A DE2737521B2 DE 2737521 B2 DE2737521 B2 DE 2737521B2 DE 2737521 A DE2737521 A DE 2737521A DE 2737521 A DE2737521 A DE 2737521A DE 2737521 B2 DE2737521 B2 DE 2737521B2
- Authority
- DE
- Germany
- Prior art keywords
- powder
- silicon
- carbon
- product
- particle size
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000000034 method Methods 0.000 title claims description 17
- 239000000843 powder Substances 0.000 title description 11
- 230000008569 process Effects 0.000 title description 7
- 239000002245 particle Substances 0.000 claims description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 28
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 25
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- 238000006243 chemical reaction Methods 0.000 claims description 19
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 19
- 229910052799 carbon Inorganic materials 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 14
- 230000002269 spontaneous effect Effects 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 239000011863 silicon-based powder Substances 0.000 claims description 7
- 230000001590 oxidative effect Effects 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims 1
- 239000010439 graphite Substances 0.000 claims 1
- 239000000047 product Substances 0.000 description 29
- 238000010438 heat treatment Methods 0.000 description 17
- 229910010271 silicon carbide Inorganic materials 0.000 description 14
- 239000007858 starting material Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000006229 carbon black Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000003575 carbonaceous material Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000010298 pulverizing process Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 2
- 239000000571 coke Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 230000000391 smoking effect Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 229910021431 alpha silicon carbide Inorganic materials 0.000 description 1
- 229910021383 artificial graphite Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000010327 methods by industry Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910021382 natural graphite Inorganic materials 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
- C01B32/963—Preparation from compounds containing silicon
- C01B32/984—Preparation from elemental silicon
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Composite Materials (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Structural Engineering (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9928176A JPS5325300A (en) | 1976-08-20 | 1976-08-20 | Process for preparing betaatype silicon carbide particle |
Publications (2)
Publication Number | Publication Date |
---|---|
DE2737521A1 DE2737521A1 (de) | 1978-02-23 |
DE2737521B2 true DE2737521B2 (de) | 1979-05-17 |
Family
ID=14243266
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE2737521A Ceased DE2737521B2 (de) | 1976-08-20 | 1977-08-19 | Verfahren zur Herstellung eines Pulvers von |
Country Status (5)
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0034328B1 (de) * | 1980-02-15 | 1984-08-01 | Forschungszentrum Jülich Gmbh | Verfahren zur Herstellung von Formkörpern auf der Basis von Siliziumkarbid |
EP0198608A3 (en) * | 1985-04-11 | 1987-02-04 | Kennecott Corporation | Vibratory grinding of silicon carbide |
EP0272777A3 (en) * | 1986-12-22 | 1989-03-15 | Dow Corning Corporation | Addition of calcium compounds to the carbothermic reduction of silica |
DE3838178A1 (de) * | 1987-11-12 | 1989-05-24 | Toyota Motor Co Ltd | Verfahren zur herstellung von kurzen siliciumcarbidfasern |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS606908B2 (ja) * | 1977-08-04 | 1985-02-21 | 日本坩堝株式会社 | 硼素成分を含有する活性な炭化珪素質粉末の製造方法 |
US4166841A (en) * | 1978-05-03 | 1979-09-04 | Ford Motor Company | Method for making pure beta silicon carbide |
GB2039787B (en) * | 1978-11-13 | 1982-12-08 | Res Inst For Special Inorganic | Producing corrosion resistant articles |
DE2922280C2 (de) * | 1979-05-31 | 1982-07-22 | Nippon Crucible Co., Ltd., Tokyo | Verfahren zum Herstellen von pulverförmigem ß-Siliziumcarbid |
US4217335A (en) * | 1979-06-14 | 1980-08-12 | Nippon Crucible Co., Ltd. | Process for producing β-silicon carbide fine powder |
US5306677A (en) * | 1984-03-16 | 1994-04-26 | Lanxide Technology Company, Lp | Ceramic materials |
US4713360A (en) * | 1984-03-16 | 1987-12-15 | Lanxide Technology Company, Lp | Novel ceramic materials and methods for making same |
US4853352A (en) * | 1984-07-20 | 1989-08-01 | Lanxide Technology Company, Lp | Method of making self-supporting ceramic materials and materials made thereby |
US5073527A (en) * | 1984-07-20 | 1991-12-17 | Lanxide Technology Company, Lp | Self-supporting ceramic materials |
JPS62167212A (ja) * | 1986-01-21 | 1987-07-23 | Osamu Yamada | β型炭化珪素粉末の製造法 |
US5340655A (en) * | 1986-05-08 | 1994-08-23 | Lanxide Technology Company, Lp | Method of making shaped ceramic composites with the use of a barrier and articles produced thereby |
US5017526A (en) * | 1986-05-08 | 1991-05-21 | Lanxide Technology Company, Lp | Methods of making shaped ceramic composites |
US5162273A (en) * | 1986-05-08 | 1992-11-10 | Lanxide Technology Company, Lp | Shaped ceramic composites and methods of making the same |
US5236786A (en) * | 1986-05-08 | 1993-08-17 | Lanxide Technology Company, Lp | Shaped ceramic composites with a barrier |
US4923832A (en) * | 1986-05-08 | 1990-05-08 | Lanxide Technology Company, Lp | Method of making shaped ceramic composites with the use of a barrier |
US4859640A (en) * | 1986-08-13 | 1989-08-22 | Lanxide Technology Company, Lp | Method of making ceramic composite articles with shape replicated surfaces |
US5212124A (en) * | 1986-08-13 | 1993-05-18 | Lanxide Technology Company, Lp | Ceramic composite articles with shape replicated surfaces |
US5021230A (en) * | 1987-04-22 | 1991-06-04 | Krstic Vladimir D | Method of making silicon carbide |
SU1706963A1 (ru) * | 1988-04-28 | 1992-01-23 | Институт структурной макрокинетики АН СССР | Способ получени @ -карбида кремни |
FR2638733B1 (fr) * | 1988-11-10 | 1991-12-20 | Pechiney Electrometallurgie | Procede de production de carbure de silicium micr onique |
JPH04507285A (ja) * | 1988-12-09 | 1992-12-17 | セントコー・インコーポレーテッド | 抗イディオトープ免疫検定法 |
JPH0354111A (ja) * | 1989-07-19 | 1991-03-08 | Kansai Coke & Chem Co Ltd | SiC微粉末の製造方法 |
US5395572A (en) * | 1990-01-04 | 1995-03-07 | Brotz; Gregory R. | Process for making cellular silicon carbide |
US5306676A (en) * | 1993-03-09 | 1994-04-26 | Lanxide Technology Company, Lp | Silicon carbide bodies and methods of making the same |
RU2169701C2 (ru) * | 1999-08-18 | 2001-06-27 | ЗАО НПП "Шунгитовые технологии" | Способ получения бета-карбида кремния |
RU2484017C2 (ru) * | 2009-02-27 | 2013-06-10 | Сергей Константинович Гордеев | Способ получения пористого наноструктурного карбида кремния |
CN103058192B (zh) * | 2013-01-06 | 2016-05-25 | 河北同光晶体有限公司 | 一种用于碳化硅晶体生长的碳化硅微粉的制备方法 |
US20250162882A1 (en) * | 2022-02-24 | 2025-05-22 | Tokuyama Corporation | Silicon Carbide Powder, and Production Method Thereof |
CN115259161B (zh) * | 2022-08-10 | 2023-05-05 | 航天特种材料及工艺技术研究所 | 一种套环状碳化硅纳米纤维气凝胶材料及其制备方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3368871A (en) * | 1966-12-05 | 1968-02-13 | Ionics | Fluidized bed process for the preparation of colloidal silicon carbide |
-
1976
- 1976-08-20 JP JP9928176A patent/JPS5325300A/ja active Granted
-
1977
- 1977-08-18 GB GB34665/77A patent/GB1551665A/en not_active Expired
- 1977-08-18 US US05/825,733 patent/US4117096A/en not_active Expired - Lifetime
- 1977-08-19 DE DE2737521A patent/DE2737521B2/de not_active Ceased
- 1977-08-19 FR FR7725456A patent/FR2362080A1/fr active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0034328B1 (de) * | 1980-02-15 | 1984-08-01 | Forschungszentrum Jülich Gmbh | Verfahren zur Herstellung von Formkörpern auf der Basis von Siliziumkarbid |
EP0198608A3 (en) * | 1985-04-11 | 1987-02-04 | Kennecott Corporation | Vibratory grinding of silicon carbide |
EP0272777A3 (en) * | 1986-12-22 | 1989-03-15 | Dow Corning Corporation | Addition of calcium compounds to the carbothermic reduction of silica |
DE3838178A1 (de) * | 1987-11-12 | 1989-05-24 | Toyota Motor Co Ltd | Verfahren zur herstellung von kurzen siliciumcarbidfasern |
Also Published As
Publication number | Publication date |
---|---|
JPS5325300A (en) | 1978-03-08 |
DE2737521A1 (de) | 1978-02-23 |
GB1551665A (en) | 1979-08-30 |
FR2362080A1 (fr) | 1978-03-17 |
JPS5529005B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1980-07-31 |
US4117096A (en) | 1978-09-26 |
FR2362080B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1981-07-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OAP | Request for examination filed | ||
OD | Request for examination | ||
8235 | Patent refused |