DE2723915B2 - Verfahren und Vorrichtung zum Zonenschmelzen einer Dünnschicht - Google Patents
Verfahren und Vorrichtung zum Zonenschmelzen einer DünnschichtInfo
- Publication number
- DE2723915B2 DE2723915B2 DE2723915A DE2723915A DE2723915B2 DE 2723915 B2 DE2723915 B2 DE 2723915B2 DE 2723915 A DE2723915 A DE 2723915A DE 2723915 A DE2723915 A DE 2723915A DE 2723915 B2 DE2723915 B2 DE 2723915B2
- Authority
- DE
- Germany
- Prior art keywords
- thin film
- zone
- laser
- melting
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000010409 thin film Substances 0.000 title claims description 63
- 238000004857 zone melting Methods 0.000 title claims description 38
- 238000000034 method Methods 0.000 title claims description 32
- 238000002844 melting Methods 0.000 claims description 22
- 230000008018 melting Effects 0.000 claims description 22
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 21
- 239000013078 crystal Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 16
- 230000007547 defect Effects 0.000 claims description 10
- 238000002955 isolation Methods 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- 239000000155 melt Substances 0.000 claims description 2
- 108090000623 proteins and genes Proteins 0.000 claims 1
- 238000000746 purification Methods 0.000 claims 1
- 238000005204 segregation Methods 0.000 claims 1
- 230000008569 process Effects 0.000 description 18
- 239000000758 substrate Substances 0.000 description 14
- 239000000523 sample Substances 0.000 description 13
- 230000000875 corresponding effect Effects 0.000 description 8
- 238000001816 cooling Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 4
- 230000037303 wrinkles Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000009529 body temperature measurement Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010309 melting process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- SMZOGRDCAXLAAR-UHFFFAOYSA-N aluminium isopropoxide Chemical group [Al+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] SMZOGRDCAXLAAR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000003534 oscillatory effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
- C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/903—Dendrite or web or cage technique
- Y10S117/904—Laser beam
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/09—Laser anneal
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Hall/Mr Elements (AREA)
- Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6001276A JPS52143755A (en) | 1976-05-26 | 1976-05-26 | Laser, zone melting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2723915A1 DE2723915A1 (de) | 1977-12-01 |
| DE2723915B2 true DE2723915B2 (de) | 1979-01-25 |
Family
ID=13129720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2723915A Withdrawn DE2723915B2 (de) | 1976-05-26 | 1977-05-26 | Verfahren und Vorrichtung zum Zonenschmelzen einer Dünnschicht |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4177372A (en:Method) |
| JP (1) | JPS52143755A (en:Method) |
| DE (1) | DE2723915B2 (en:Method) |
| GB (1) | GB1575440A (en:Method) |
| NL (1) | NL7705780A (en:Method) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19702109A1 (de) * | 1996-03-04 | 1997-09-11 | Mitsubishi Electric Corp | Verfahren zur Erzeugung eines Bauteils aus rekristallisiertem Material und dazugehöriges Gerät und Aufheizverfahren |
Families Citing this family (47)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USRE32056E (en) * | 1977-10-19 | 1985-12-24 | Baxter Travenol Laboratories, Inc. | Method of forming a connection between two sealed conduits using radiant energy |
| JPS55100295A (en) * | 1979-01-24 | 1980-07-31 | Nippon Telegr & Teleph Corp <Ntt> | Production of single crystal thin film |
| CA1171030A (en) | 1979-11-05 | 1984-07-17 | David Bellamy | Fluid transfer assembly |
| JPS56108231A (en) * | 1980-02-01 | 1981-08-27 | Ushio Inc | Annealing method of semiconductor wafer |
| US5217564A (en) * | 1980-04-10 | 1993-06-08 | Massachusetts Institute Of Technology | Method of producing sheets of crystalline material and devices made therefrom |
| LU82690A1 (fr) * | 1980-08-05 | 1982-05-10 | Lucien D Laude | Procede de preparation de films polycristallins semiconducteurs composes ou elementaires et films ainsi obtenus |
| US4374678A (en) * | 1981-06-01 | 1983-02-22 | Texas Instruments Incorporated | Process for forming HgCoTe alloys selectively by IR illumination |
| JPS5839012A (ja) * | 1981-08-31 | 1983-03-07 | Fujitsu Ltd | 非単結晶半導体層の単結晶化方法 |
| JPS58176929A (ja) * | 1982-04-09 | 1983-10-17 | Fujitsu Ltd | 半導体装置の製造方法 |
| US4468279A (en) * | 1982-08-16 | 1984-08-28 | Avco Everett Research Laboratory, Inc. | Method for laser melting of silicon |
| US4853076A (en) * | 1983-12-29 | 1989-08-01 | Massachusetts Institute Of Technology | Semiconductor thin films |
| US4725709A (en) * | 1984-09-25 | 1988-02-16 | Siemens Aktiengesellschaft | Apparatus having a sweep arrangement for non-contacting modification of an article |
| JPS61131524A (ja) * | 1984-11-30 | 1986-06-19 | Yokogawa Electric Corp | 半導体基板 |
| JPS61136985A (ja) * | 1984-12-05 | 1986-06-24 | Nec Corp | レ−ザアニ−ル法 |
| DE3445613C1 (de) * | 1984-12-14 | 1985-07-11 | Jürgen 6074 Rödermark Wisotzki | Verfahren und Vorrichtung zur spanlosen Herstellung schmaler,laenglicher Werkstuecke aus Metall mittels Laserstrahls |
| AU6563986A (en) * | 1985-12-06 | 1987-06-11 | Hughes Technology Pty. Ltd. | Laser sawmill |
| WO1990007789A1 (en) * | 1986-04-01 | 1990-07-12 | Masahide Oshita | Thin film of intermetallic compound semiconductor and process for its production |
| FR2604190B1 (fr) * | 1986-09-19 | 1988-12-30 | Carre Remy | Machine de recristallisation d'une couche mince par zone fondue |
| FR2610450A1 (fr) * | 1987-01-29 | 1988-08-05 | France Etat | Dispositif de traitement thermique de plaquettes semi-conductrices |
| US5322589A (en) * | 1989-02-09 | 1994-06-21 | Fujitsu Limited | Process and apparatus for recrystallization of semiconductor layer |
| JPH02290014A (ja) * | 1989-02-09 | 1990-11-29 | Fujitsu Ltd | ビームアニール方法及び装置並びに半導体装置の製造方法 |
| JP3213338B2 (ja) * | 1991-05-15 | 2001-10-02 | 株式会社リコー | 薄膜半導体装置の製法 |
| US6975296B1 (en) * | 1991-06-14 | 2005-12-13 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
| US5424244A (en) * | 1992-03-26 | 1995-06-13 | Semiconductor Energy Laboratory Co., Ltd. | Process for laser processing and apparatus for use in the same |
| US5359172A (en) * | 1992-12-30 | 1994-10-25 | Westinghouse Electric Corporation | Direct tube repair by laser welding |
| US5789720A (en) * | 1992-12-30 | 1998-08-04 | Westinghouse Electric Corporation | Method of repairing a discontinuity on a tube by welding |
| US5664497A (en) * | 1994-02-18 | 1997-09-09 | Texas Instruments Incorporated | Laser symbolization on copper heat slugs |
| US6242289B1 (en) | 1995-09-08 | 2001-06-05 | Semiconductor Energy Laboratories Co., Ltd. | Method for producing semiconductor device |
| US5712191A (en) * | 1994-09-16 | 1998-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device |
| US6902616B1 (en) * | 1995-07-19 | 2005-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Method and apparatus for producing semiconductor device |
| JP2001185503A (ja) * | 1999-12-24 | 2001-07-06 | Nec Corp | 半導体薄膜改質装置 |
| US6567541B1 (en) * | 2000-02-25 | 2003-05-20 | Ahbee 1, L.P. | Method and apparatus for adhesion testing of thin film materials |
| US6531681B1 (en) * | 2000-03-27 | 2003-03-11 | Ultratech Stepper, Inc. | Apparatus having line source of radiant energy for exposing a substrate |
| US7050878B2 (en) | 2001-11-22 | 2006-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductror fabricating apparatus |
| US7133737B2 (en) | 2001-11-30 | 2006-11-07 | Semiconductor Energy Laboratory Co., Ltd. | Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer |
| KR100967824B1 (ko) | 2001-11-30 | 2010-07-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치의 제작방법 |
| US7214573B2 (en) | 2001-12-11 | 2007-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device that includes patterning sub-islands |
| JP3992976B2 (ja) * | 2001-12-21 | 2007-10-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4030758B2 (ja) * | 2001-12-28 | 2008-01-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| ES2285121T3 (es) * | 2002-04-15 | 2007-11-16 | Siemens Aktiengesellschaft | Procedimiento para la produccion de estructuras monocristalinas. |
| US6932865B2 (en) * | 2003-04-11 | 2005-08-23 | Lockheed Martin Corporation | System and method of making single-crystal structures through free-form fabrication techniques |
| US7301149B2 (en) * | 2004-05-06 | 2007-11-27 | The Board Of Trustees Of The University Of Illinois | Apparatus and method for determining a thickness of a deposited material |
| ES2294919B1 (es) * | 2006-03-07 | 2009-02-16 | Consejo Superior Investig. Cientificas | Horno continuo con laser acoplado para el tratamiento superficial de materiales. |
| JP4549996B2 (ja) * | 2006-03-30 | 2010-09-22 | 株式会社日本製鋼所 | レーザ照射装置 |
| TW201001624A (en) * | 2008-01-24 | 2010-01-01 | Soligie Inc | Silicon thin film transistors, systems, and methods of making same |
| US20090191348A1 (en) * | 2008-01-25 | 2009-07-30 | Henry Hieslmair | Zone melt recrystallization for inorganic films |
| WO2015035165A1 (en) | 2013-09-06 | 2015-03-12 | Ormco Corporation | Orthodontic appliances and methods of making and using same |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB963843A (en) * | 1960-08-22 | 1964-07-15 | Ass Elect Ind | Improvements relating to zone melting by electron beam furnaces |
| US3699649A (en) * | 1969-11-05 | 1972-10-24 | Donald A Mcwilliams | Method of and apparatus for regulating the resistance of film resistors |
| US3848104A (en) * | 1973-04-09 | 1974-11-12 | Avco Everett Res Lab Inc | Apparatus for heat treating a surface |
| JPS50110272A (en:Method) * | 1974-02-06 | 1975-08-30 | ||
| US3986391A (en) * | 1975-09-22 | 1976-10-19 | Western Electric Company, Inc. | Method and apparatus for the real-time monitoring of a continuous weld using stress-wave emission techniques |
| JPS5296864A (en) * | 1976-02-09 | 1977-08-15 | Motorola Inc | Method of transforming slice of polycrystal semiconductor into slice of huge crystal semiconductor |
-
1976
- 1976-05-26 JP JP6001276A patent/JPS52143755A/ja active Granted
-
1977
- 1977-05-24 US US05/799,928 patent/US4177372A/en not_active Expired - Lifetime
- 1977-05-25 NL NL7705780A patent/NL7705780A/xx not_active Application Discontinuation
- 1977-05-25 GB GB22047/77A patent/GB1575440A/en not_active Expired
- 1977-05-26 DE DE2723915A patent/DE2723915B2/de not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19702109A1 (de) * | 1996-03-04 | 1997-09-11 | Mitsubishi Electric Corp | Verfahren zur Erzeugung eines Bauteils aus rekristallisiertem Material und dazugehöriges Gerät und Aufheizverfahren |
| US6235110B1 (en) | 1996-03-04 | 2001-05-22 | Mitsubishi Denki Kabushiki Kaisha | Method of producing recrystallized-material-member, and apparatus and heating method therefor |
| DE19702109C2 (de) * | 1996-03-04 | 2001-08-09 | Mitsubishi Electric Corp | Verfahren zur Erzeugung eines Bauteils aus rekristallisiertem Material, dazugehöriges Heizgerät und dessen Verwendung |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2723915A1 (de) | 1977-12-01 |
| JPS52143755A (en) | 1977-11-30 |
| JPS541613B2 (en:Method) | 1979-01-26 |
| US4177372A (en) | 1979-12-04 |
| NL7705780A (nl) | 1977-11-29 |
| GB1575440A (en) | 1980-09-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| BHN | Withdrawal |