JPS5296864A - Method of transforming slice of polycrystal semiconductor into slice of huge crystal semiconductor - Google Patents
Method of transforming slice of polycrystal semiconductor into slice of huge crystal semiconductorInfo
- Publication number
- JPS5296864A JPS5296864A JP981077A JP981077A JPS5296864A JP S5296864 A JPS5296864 A JP S5296864A JP 981077 A JP981077 A JP 981077A JP 981077 A JP981077 A JP 981077A JP S5296864 A JPS5296864 A JP S5296864A
- Authority
- JP
- Japan
- Prior art keywords
- slice
- semiconductor
- transforming
- polycrystal
- huge crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US65655676A | 1976-02-09 | 1976-02-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5296864A true JPS5296864A (en) | 1977-08-15 |
Family
ID=24633553
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP981077A Pending JPS5296864A (en) | 1976-02-09 | 1977-02-02 | Method of transforming slice of polycrystal semiconductor into slice of huge crystal semiconductor |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS5296864A (en) |
DE (1) | DE2704549A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52143755A (en) * | 1976-05-26 | 1977-11-30 | Hitachi Ltd | Laser, zone melting device |
JPS6289367A (en) * | 1985-10-15 | 1987-04-23 | シ−メンス、アクチエンゲゼルシヤフト | Manufacture of large area silicon crystal for solar battery |
JP2002057166A (en) * | 2000-06-02 | 2002-02-22 | Semiconductor Energy Lab Co Ltd | Manufacturing method of semiconductor device |
-
1977
- 1977-02-02 JP JP981077A patent/JPS5296864A/en active Pending
- 1977-02-03 DE DE19772704549 patent/DE2704549A1/en not_active Withdrawn
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52143755A (en) * | 1976-05-26 | 1977-11-30 | Hitachi Ltd | Laser, zone melting device |
JPS541613B2 (en) * | 1976-05-26 | 1979-01-26 | ||
JPS6289367A (en) * | 1985-10-15 | 1987-04-23 | シ−メンス、アクチエンゲゼルシヤフト | Manufacture of large area silicon crystal for solar battery |
JP2002057166A (en) * | 2000-06-02 | 2002-02-22 | Semiconductor Energy Lab Co Ltd | Manufacturing method of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
DE2704549A1 (en) | 1977-08-11 |
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