JPS5240966A - Method of making semiconductor single crystal having adjustable density of doping materials - Google Patents

Method of making semiconductor single crystal having adjustable density of doping materials

Info

Publication number
JPS5240966A
JPS5240966A JP8737476A JP8737476A JPS5240966A JP S5240966 A JPS5240966 A JP S5240966A JP 8737476 A JP8737476 A JP 8737476A JP 8737476 A JP8737476 A JP 8737476A JP S5240966 A JPS5240966 A JP S5240966A
Authority
JP
Japan
Prior art keywords
single crystal
semiconductor single
making semiconductor
doping materials
adjustable density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8737476A
Other languages
Japanese (ja)
Inventor
Eruburannaa Adarubaato
Jiyorujiyu Furendoritsuchi
Buriewatsusaa Jiyorujiyu
Sutotsuku Horusuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Wacker Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic AG filed Critical Wacker Siltronic AG
Publication of JPS5240966A publication Critical patent/JPS5240966A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP8737476A 1975-09-25 1976-07-23 Method of making semiconductor single crystal having adjustable density of doping materials Pending JPS5240966A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752542867 DE2542867A1 (en) 1975-09-25 1975-09-25 PROCESS FOR MANUFACTURING SEMICONDUCTOR SINGLE CRYSTALS WITH ADJUSTABLE DOPENANT CONCENTRATION

Publications (1)

Publication Number Publication Date
JPS5240966A true JPS5240966A (en) 1977-03-30

Family

ID=5957446

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8737476A Pending JPS5240966A (en) 1975-09-25 1976-07-23 Method of making semiconductor single crystal having adjustable density of doping materials

Country Status (7)

Country Link
JP (1) JPS5240966A (en)
BE (1) BE846557A (en)
DE (1) DE2542867A1 (en)
DK (1) DK381276A (en)
FR (1) FR2325425A1 (en)
IT (1) IT1066181B (en)
NL (1) NL7609300A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59156993A (en) * 1983-02-23 1984-09-06 Komatsu Denshi Kinzoku Kk Method and device for doping cz single crystal
JPS61227986A (en) * 1985-03-30 1986-10-11 Shin Etsu Handotai Co Ltd Production of single crystal silicon rod

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19936838A1 (en) * 1999-08-05 2001-02-15 Wacker Siltronic Halbleitermat Production of a single crystal doped with nitrogen comprises using a dopant in powdered form containing nitride-bound silicon
KR20030015239A (en) * 2000-05-10 2003-02-20 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 Method and device for feeding arsenic dopant into a silicon crystal growing process
US7132091B2 (en) 2001-09-28 2006-11-07 Memc Electronic Materials, Inc. Single crystal silicon ingot having a high arsenic concentration
US7922817B2 (en) 2008-04-24 2011-04-12 Memc Electronic Materials, Inc. Method and device for feeding arsenic dopant into a silicon crystal growing apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59156993A (en) * 1983-02-23 1984-09-06 Komatsu Denshi Kinzoku Kk Method and device for doping cz single crystal
JPS61227986A (en) * 1985-03-30 1986-10-11 Shin Etsu Handotai Co Ltd Production of single crystal silicon rod
JPH037637B2 (en) * 1985-03-30 1991-02-04 Shinetsu Handotai Kk

Also Published As

Publication number Publication date
DK381276A (en) 1977-03-26
NL7609300A (en) 1977-03-29
IT1066181B (en) 1985-03-04
BE846557A (en) 1977-03-24
FR2325425A1 (en) 1977-04-22
DE2542867A1 (en) 1977-03-31

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