JPS5347286A - Method of producing polycrystalline silicon used for semiconductor - Google Patents

Method of producing polycrystalline silicon used for semiconductor

Info

Publication number
JPS5347286A
JPS5347286A JP12046877A JP12046877A JPS5347286A JP S5347286 A JPS5347286 A JP S5347286A JP 12046877 A JP12046877 A JP 12046877A JP 12046877 A JP12046877 A JP 12046877A JP S5347286 A JPS5347286 A JP S5347286A
Authority
JP
Japan
Prior art keywords
semiconductor
polycrystalline silicon
silicon used
producing polycrystalline
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12046877A
Other languages
Japanese (ja)
Inventor
Deiitsue Uorufugangu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS5347286A publication Critical patent/JPS5347286A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Photovoltaic Devices (AREA)
JP12046877A 1976-10-07 1977-10-06 Method of producing polycrystalline silicon used for semiconductor Pending JPS5347286A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762645374 DE2645374A1 (en) 1976-10-07 1976-10-07 Polycrystalline doped silicon prodn. for semiconductors - e.g. solar cells, includes tempering to reduce grain boundaries

Publications (1)

Publication Number Publication Date
JPS5347286A true JPS5347286A (en) 1978-04-27

Family

ID=5989951

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12046877A Pending JPS5347286A (en) 1976-10-07 1977-10-06 Method of producing polycrystalline silicon used for semiconductor

Country Status (3)

Country Link
JP (1) JPS5347286A (en)
DE (1) DE2645374A1 (en)
IT (1) IT1087729B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893860A (en) * 1981-11-30 1983-06-03 Nippon Telegr & Teleph Corp <Ntt> Manufacture of high strength copper alloy with high electric conductivity
JPH01147032A (en) * 1987-12-02 1989-06-08 Furukawa Electric Co Ltd:The Conductor for extra fine winding wire
JPH04177880A (en) * 1990-11-13 1992-06-25 Canon Inc Solar cell and method for manufacturing the solar cell

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2033355B (en) * 1978-09-07 1982-05-06 Standard Telephones Cables Ltd Semiconductor processing
US7914619B2 (en) * 2008-11-03 2011-03-29 International Business Machines Corporation Thick epitaxial silicon by grain reorientation annealing and applications thereof
FR2968316B1 (en) * 2010-12-01 2013-06-28 Commissariat Energie Atomique PROCESS FOR THE PREPARATION OF A CRYSTALLIZED SILICON LAYER WITH BIG GRAINS

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893860A (en) * 1981-11-30 1983-06-03 Nippon Telegr & Teleph Corp <Ntt> Manufacture of high strength copper alloy with high electric conductivity
JPH01147032A (en) * 1987-12-02 1989-06-08 Furukawa Electric Co Ltd:The Conductor for extra fine winding wire
JPH04177880A (en) * 1990-11-13 1992-06-25 Canon Inc Solar cell and method for manufacturing the solar cell

Also Published As

Publication number Publication date
IT1087729B (en) 1985-06-04
DE2645374A1 (en) 1978-04-13

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