DE68909361T2 - Verfahren und vorrichtung zur herstellung einer werkstoffschicht mittels einer laser-ionenquelle. - Google Patents

Verfahren und vorrichtung zur herstellung einer werkstoffschicht mittels einer laser-ionenquelle.

Info

Publication number
DE68909361T2
DE68909361T2 DE89905838T DE68909361T DE68909361T2 DE 68909361 T2 DE68909361 T2 DE 68909361T2 DE 89905838 T DE89905838 T DE 89905838T DE 68909361 T DE68909361 T DE 68909361T DE 68909361 T2 DE68909361 T2 DE 68909361T2
Authority
DE
Germany
Prior art keywords
producing
material layer
ion source
laser ion
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89905838T
Other languages
English (en)
Other versions
DE68909361D1 (de
Inventor
Suhas Wagel
Carl Collins
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Texas System
Original Assignee
University of Texas System
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Texas System filed Critical University of Texas System
Application granted granted Critical
Publication of DE68909361D1 publication Critical patent/DE68909361D1/de
Publication of DE68909361T2 publication Critical patent/DE68909361T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
DE89905838T 1988-04-18 1989-04-17 Verfahren und vorrichtung zur herstellung einer werkstoffschicht mittels einer laser-ionenquelle. Expired - Fee Related DE68909361T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/183,022 US4987007A (en) 1988-04-18 1988-04-18 Method and apparatus for producing a layer of material from a laser ion source
PCT/US1989/001607 WO1989010427A1 (en) 1988-04-18 1989-04-17 Method and apparatus for producing a layer of material from a laser ion source

Publications (2)

Publication Number Publication Date
DE68909361D1 DE68909361D1 (de) 1993-10-28
DE68909361T2 true DE68909361T2 (de) 1994-04-28

Family

ID=22671095

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89905838T Expired - Fee Related DE68909361T2 (de) 1988-04-18 1989-04-17 Verfahren und vorrichtung zur herstellung einer werkstoffschicht mittels einer laser-ionenquelle.

Country Status (6)

Country Link
US (1) US4987007A (de)
EP (1) EP0363476B1 (de)
JP (1) JP2973407B2 (de)
AU (1) AU3543289A (de)
DE (1) DE68909361T2 (de)
WO (1) WO1989010427A1 (de)

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Also Published As

Publication number Publication date
EP0363476B1 (de) 1993-09-22
US4987007A (en) 1991-01-22
JPH03500066A (ja) 1991-01-10
JP2973407B2 (ja) 1999-11-08
DE68909361D1 (de) 1993-10-28
EP0363476A1 (de) 1990-04-18
WO1989010427A1 (en) 1989-11-02
AU3543289A (en) 1989-11-24

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Free format text: BARZ, P., DIPL.-CHEM. DR.RER.NAT., PAT.-ANW., 80803 MUENCHEN

8339 Ceased/non-payment of the annual fee