GB2155042B - Laser induced ion beam generator - Google Patents

Laser induced ion beam generator

Info

Publication number
GB2155042B
GB2155042B GB08504480A GB8504480A GB2155042B GB 2155042 B GB2155042 B GB 2155042B GB 08504480 A GB08504480 A GB 08504480A GB 8504480 A GB8504480 A GB 8504480A GB 2155042 B GB2155042 B GB 2155042B
Authority
GB
United Kingdom
Prior art keywords
ion beam
beam generator
laser induced
induced ion
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08504480A
Other versions
GB8504480D0 (en
GB2155042A (en
Inventor
John Leonard Hughes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hughes Technology Pty Ltd
Original Assignee
Hughes Technology Pty Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Technology Pty Ltd filed Critical Hughes Technology Pty Ltd
Publication of GB8504480D0 publication Critical patent/GB8504480D0/en
Publication of GB2155042A publication Critical patent/GB2155042A/en
Application granted granted Critical
Publication of GB2155042B publication Critical patent/GB2155042B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
    • H05K3/4076—Through-connections; Vertical interconnect access [VIA] connections by thin-film techniques
GB08504480A 1984-02-21 1985-02-21 Laser induced ion beam generator Expired GB2155042B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AUPG372684 1984-02-21
AUPG372584 1984-02-21

Publications (3)

Publication Number Publication Date
GB8504480D0 GB8504480D0 (en) 1985-03-27
GB2155042A GB2155042A (en) 1985-09-18
GB2155042B true GB2155042B (en) 1987-12-31

Family

ID=25642762

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08504480A Expired GB2155042B (en) 1984-02-21 1985-02-21 Laser induced ion beam generator

Country Status (1)

Country Link
GB (1) GB2155042B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4987007A (en) * 1988-04-18 1991-01-22 Board Of Regents, The University Of Texas System Method and apparatus for producing a layer of material from a laser ion source
US5098737A (en) * 1988-04-18 1992-03-24 Board Of Regents The University Of Texas System Amorphic diamond material produced by laser plasma deposition
US5411797A (en) * 1988-04-18 1995-05-02 Board Of Regents, The University Of Texas System Nanophase diamond films
EP0406871B1 (en) * 1989-07-06 1996-09-25 Kabushiki Kaisha Toyota Chuo Kenkyusho Laser deposition method and apparatus
JP2742631B2 (en) * 1990-07-24 1998-04-22 トヨタ自動車株式会社 Manufacturing method of amorphous magnetic film
DE19513566A1 (en) * 1995-04-18 1996-10-24 Hora Heinrich Industrial scale appts. implants tin ions into steel to reduce friction of alloy

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH427744A (en) * 1965-11-26 1967-01-15 Balzers Patent Beteilig Ag Process for the thermal evaporation of mixtures of substances in a vacuum
GB1138556A (en) * 1966-07-22 1969-01-01 Standard Telephones Cables Ltd Method of vapour depositing a material in the form of a pattern
GB1134965A (en) * 1966-08-30 1968-11-27 Gen Electric Improvements in "rapid vapor deposition"
GB1155124A (en) * 1967-04-15 1969-06-18 Barr & Stroud Ltd Method Of and Apparatus for Coating An Article With A MAterial by Evaporation In A Vacuum
US3710279A (en) * 1969-12-15 1973-01-09 Bell Telephone Labor Inc Apparatuses for trapping and accelerating neutral particles
US3908183A (en) * 1973-03-14 1975-09-23 California Linear Circuits Inc Combined ion implantation and kinetic transport deposition process
GB1483966A (en) * 1974-10-23 1977-08-24 Sharp Kk Vapourized-metal cluster ion source and ionized-cluster beam deposition
DE2644208C3 (en) * 1976-09-30 1981-04-30 Siemens AG, 1000 Berlin und 8000 München Process for the production of a monocrystalline layer on a substrate
US4281030A (en) * 1980-05-12 1981-07-28 Bell Telephone Laboratories, Incorporated Implantation of vaporized material on melted substrates
GB2107744B (en) * 1981-10-06 1985-07-24 Itt Ind Ltd Making al/si films by ion implantation; integrated circuits
FR2550008B1 (en) * 1983-07-27 1987-04-24 American Telephone & Telegraph EPITAXIAL GROWTH METHOD WITH SPATIAL SELECTIVITY USING ION BEAMS

Also Published As

Publication number Publication date
GB8504480D0 (en) 1985-03-27
GB2155042A (en) 1985-09-18

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19930221