DE2709447A1 - Verfahren zur epitaktischen zuechtung bei homogener niedriger temperatur - Google Patents

Verfahren zur epitaktischen zuechtung bei homogener niedriger temperatur

Info

Publication number
DE2709447A1
DE2709447A1 DE19772709447 DE2709447A DE2709447A1 DE 2709447 A1 DE2709447 A1 DE 2709447A1 DE 19772709447 DE19772709447 DE 19772709447 DE 2709447 A DE2709447 A DE 2709447A DE 2709447 A1 DE2709447 A1 DE 2709447A1
Authority
DE
Germany
Prior art keywords
gas
temperature
gas phase
phase
iii
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19772709447
Other languages
German (de)
English (en)
Inventor
Jean-Philippe Hallais
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE2709447A1 publication Critical patent/DE2709447A1/de
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE19772709447 1976-03-10 1977-03-04 Verfahren zur epitaktischen zuechtung bei homogener niedriger temperatur Ceased DE2709447A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7606832A FR2344123A1 (fr) 1976-03-10 1976-03-10 Procede de croissance epitaxiale a temperature homogene et basse

Publications (1)

Publication Number Publication Date
DE2709447A1 true DE2709447A1 (de) 1977-09-22

Family

ID=9170220

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19772709447 Ceased DE2709447A1 (de) 1976-03-10 1977-03-04 Verfahren zur epitaktischen zuechtung bei homogener niedriger temperatur

Country Status (6)

Country Link
US (1) US4086109A (enExample)
JP (1) JPS52123388A (enExample)
CA (1) CA1086611A (enExample)
DE (1) DE2709447A1 (enExample)
FR (1) FR2344123A1 (enExample)
GB (1) GB1572018A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5250148A (en) * 1985-05-15 1993-10-05 Research Development Corporation Process for growing GaAs monocrystal film
US4783320A (en) * 1985-11-25 1988-11-08 The United States Of America As Represented By The Secretary Of The Air Force Rapid synthesis of indium phosphide
US4689094A (en) * 1985-12-24 1987-08-25 Raytheon Company Compensation doping of group III-V materials

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3145125A (en) * 1961-07-10 1964-08-18 Ibm Method of synthesizing iii-v compound semiconductor epitaxial layers having a specified conductivity type without impurity additions
US3975218A (en) * 1972-04-28 1976-08-17 Semimetals, Inc. Process for production of III-V compound epitaxial crystals
US3762945A (en) * 1972-05-01 1973-10-02 Bell Telephone Labor Inc Technique for the fabrication of a millimeter wave beam lead schottkybarrier device
JPS5127525B2 (enExample) * 1972-07-07 1976-08-13
JPS5333390B2 (enExample) * 1974-02-18 1978-09-13

Also Published As

Publication number Publication date
US4086109A (en) 1978-04-25
GB1572018A (en) 1980-07-23
FR2344123A1 (fr) 1977-10-07
FR2344123B1 (enExample) 1978-08-25
JPS52123388A (en) 1977-10-17
JPS548627B2 (enExample) 1979-04-17
CA1086611A (en) 1980-09-30

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Legal Events

Date Code Title Description
OD Request for examination
8131 Rejection