GB1572018A - Method of vapour phase epitaxial growth - Google Patents
Method of vapour phase epitaxial growth Download PDFInfo
- Publication number
- GB1572018A GB1572018A GB9459/77A GB945977A GB1572018A GB 1572018 A GB1572018 A GB 1572018A GB 9459/77 A GB9459/77 A GB 9459/77A GB 945977 A GB945977 A GB 945977A GB 1572018 A GB1572018 A GB 1572018A
- Authority
- GB
- United Kingdom
- Prior art keywords
- vapour phase
- temperature
- compound
- hydrogen
- ill
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 30
- 238000000927 vapour-phase epitaxy Methods 0.000 title claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 18
- 239000001257 hydrogen Substances 0.000 claims description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 9
- 230000007935 neutral effect Effects 0.000 claims description 6
- 229910021478 group 5 element Inorganic materials 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 150000004820 halides Chemical class 0.000 claims description 3
- 150000002431 hydrogen Chemical class 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 2
- 238000006243 chemical reaction Methods 0.000 description 13
- 230000008021 deposition Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 241000206607 Porphyra umbilicalis Species 0.000 description 1
- OEYOHULQRFXULB-UHFFFAOYSA-N arsenic trichloride Chemical compound Cl[As](Cl)Cl OEYOHULQRFXULB-UHFFFAOYSA-N 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7606832A FR2344123A1 (fr) | 1976-03-10 | 1976-03-10 | Procede de croissance epitaxiale a temperature homogene et basse |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1572018A true GB1572018A (en) | 1980-07-23 |
Family
ID=9170220
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9459/77A Expired GB1572018A (en) | 1976-03-10 | 1977-03-07 | Method of vapour phase epitaxial growth |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4086109A (enExample) |
| JP (1) | JPS52123388A (enExample) |
| CA (1) | CA1086611A (enExample) |
| DE (1) | DE2709447A1 (enExample) |
| FR (1) | FR2344123A1 (enExample) |
| GB (1) | GB1572018A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5250148A (en) * | 1985-05-15 | 1993-10-05 | Research Development Corporation | Process for growing GaAs monocrystal film |
| US4783320A (en) * | 1985-11-25 | 1988-11-08 | The United States Of America As Represented By The Secretary Of The Air Force | Rapid synthesis of indium phosphide |
| US4689094A (en) * | 1985-12-24 | 1987-08-25 | Raytheon Company | Compensation doping of group III-V materials |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3145125A (en) * | 1961-07-10 | 1964-08-18 | Ibm | Method of synthesizing iii-v compound semiconductor epitaxial layers having a specified conductivity type without impurity additions |
| US3975218A (en) * | 1972-04-28 | 1976-08-17 | Semimetals, Inc. | Process for production of III-V compound epitaxial crystals |
| US3762945A (en) * | 1972-05-01 | 1973-10-02 | Bell Telephone Labor Inc | Technique for the fabrication of a millimeter wave beam lead schottkybarrier device |
| JPS5127525B2 (enExample) * | 1972-07-07 | 1976-08-13 | ||
| JPS5333390B2 (enExample) * | 1974-02-18 | 1978-09-13 |
-
1976
- 1976-03-10 FR FR7606832A patent/FR2344123A1/fr active Granted
-
1977
- 1977-03-04 US US05/774,524 patent/US4086109A/en not_active Expired - Lifetime
- 1977-03-04 DE DE19772709447 patent/DE2709447A1/de not_active Ceased
- 1977-03-07 GB GB9459/77A patent/GB1572018A/en not_active Expired
- 1977-03-08 JP JP2452177A patent/JPS52123388A/ja active Granted
- 1977-03-09 CA CA273,546A patent/CA1086611A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US4086109A (en) | 1978-04-25 |
| DE2709447A1 (de) | 1977-09-22 |
| FR2344123A1 (fr) | 1977-10-07 |
| FR2344123B1 (enExample) | 1978-08-25 |
| JPS52123388A (en) | 1977-10-17 |
| JPS548627B2 (enExample) | 1979-04-17 |
| CA1086611A (en) | 1980-09-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |