JPS52123388A - Epitaxial growth at homogeneous low temperature - Google Patents

Epitaxial growth at homogeneous low temperature

Info

Publication number
JPS52123388A
JPS52123388A JP2452177A JP2452177A JPS52123388A JP S52123388 A JPS52123388 A JP S52123388A JP 2452177 A JP2452177 A JP 2452177A JP 2452177 A JP2452177 A JP 2452177A JP S52123388 A JPS52123388 A JP S52123388A
Authority
JP
Japan
Prior art keywords
low temperature
epitaxial growth
homogeneous low
homogeneous
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2452177A
Other languages
English (en)
Japanese (ja)
Other versions
JPS548627B2 (enExample
Inventor
Fuiritsupu Aaree Jiyan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS52123388A publication Critical patent/JPS52123388A/ja
Publication of JPS548627B2 publication Critical patent/JPS548627B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2452177A 1976-03-10 1977-03-08 Epitaxial growth at homogeneous low temperature Granted JPS52123388A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7606832A FR2344123A1 (fr) 1976-03-10 1976-03-10 Procede de croissance epitaxiale a temperature homogene et basse

Publications (2)

Publication Number Publication Date
JPS52123388A true JPS52123388A (en) 1977-10-17
JPS548627B2 JPS548627B2 (enExample) 1979-04-17

Family

ID=9170220

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2452177A Granted JPS52123388A (en) 1976-03-10 1977-03-08 Epitaxial growth at homogeneous low temperature

Country Status (6)

Country Link
US (1) US4086109A (enExample)
JP (1) JPS52123388A (enExample)
CA (1) CA1086611A (enExample)
DE (1) DE2709447A1 (enExample)
FR (1) FR2344123A1 (enExample)
GB (1) GB1572018A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5250148A (en) * 1985-05-15 1993-10-05 Research Development Corporation Process for growing GaAs monocrystal film
US4783320A (en) * 1985-11-25 1988-11-08 The United States Of America As Represented By The Secretary Of The Air Force Rapid synthesis of indium phosphide
US4689094A (en) * 1985-12-24 1987-08-25 Raytheon Company Compensation doping of group III-V materials

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4929101A (enExample) * 1972-07-07 1974-03-15
JPS50114974A (enExample) * 1974-02-18 1975-09-09

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3145125A (en) * 1961-07-10 1964-08-18 Ibm Method of synthesizing iii-v compound semiconductor epitaxial layers having a specified conductivity type without impurity additions
US3975218A (en) * 1972-04-28 1976-08-17 Semimetals, Inc. Process for production of III-V compound epitaxial crystals
US3762945A (en) * 1972-05-01 1973-10-02 Bell Telephone Labor Inc Technique for the fabrication of a millimeter wave beam lead schottkybarrier device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4929101A (enExample) * 1972-07-07 1974-03-15
JPS50114974A (enExample) * 1974-02-18 1975-09-09

Also Published As

Publication number Publication date
US4086109A (en) 1978-04-25
DE2709447A1 (de) 1977-09-22
GB1572018A (en) 1980-07-23
FR2344123A1 (fr) 1977-10-07
FR2344123B1 (enExample) 1978-08-25
JPS548627B2 (enExample) 1979-04-17
CA1086611A (en) 1980-09-30

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