FR2344123A1 - Procede de croissance epitaxiale a temperature homogene et basse - Google Patents

Procede de croissance epitaxiale a temperature homogene et basse

Info

Publication number
FR2344123A1
FR2344123A1 FR7606832A FR7606832A FR2344123A1 FR 2344123 A1 FR2344123 A1 FR 2344123A1 FR 7606832 A FR7606832 A FR 7606832A FR 7606832 A FR7606832 A FR 7606832A FR 2344123 A1 FR2344123 A1 FR 2344123A1
Authority
FR
France
Prior art keywords
homogeneous
low temperature
epitaxial growth
growth process
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7606832A
Other languages
English (en)
French (fr)
Other versions
FR2344123B1 (enExample
Inventor
Jean Hallais
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Laboratoires dElectronique Philips SAS
Original Assignee
Laboratoires dElectronique et de Physique Appliquee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laboratoires dElectronique et de Physique Appliquee filed Critical Laboratoires dElectronique et de Physique Appliquee
Priority to FR7606832A priority Critical patent/FR2344123A1/fr
Priority to US05/774,524 priority patent/US4086109A/en
Priority to DE19772709447 priority patent/DE2709447A1/de
Priority to GB9459/77A priority patent/GB1572018A/en
Priority to JP2452177A priority patent/JPS52123388A/ja
Priority to CA273,546A priority patent/CA1086611A/en
Publication of FR2344123A1 publication Critical patent/FR2344123A1/fr
Application granted granted Critical
Publication of FR2344123B1 publication Critical patent/FR2344123B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR7606832A 1976-03-10 1976-03-10 Procede de croissance epitaxiale a temperature homogene et basse Granted FR2344123A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7606832A FR2344123A1 (fr) 1976-03-10 1976-03-10 Procede de croissance epitaxiale a temperature homogene et basse
US05/774,524 US4086109A (en) 1976-03-10 1977-03-04 Method for the epitaxial growth of III-V compounds at homogeneous low temperature utilizing a single flat temperature zone
DE19772709447 DE2709447A1 (de) 1976-03-10 1977-03-04 Verfahren zur epitaktischen zuechtung bei homogener niedriger temperatur
GB9459/77A GB1572018A (en) 1976-03-10 1977-03-07 Method of vapour phase epitaxial growth
JP2452177A JPS52123388A (en) 1976-03-10 1977-03-08 Epitaxial growth at homogeneous low temperature
CA273,546A CA1086611A (en) 1976-03-10 1977-03-09 Epitaxial growth of iiia-vb compounds at low temperatures

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7606832A FR2344123A1 (fr) 1976-03-10 1976-03-10 Procede de croissance epitaxiale a temperature homogene et basse

Publications (2)

Publication Number Publication Date
FR2344123A1 true FR2344123A1 (fr) 1977-10-07
FR2344123B1 FR2344123B1 (enExample) 1978-08-25

Family

ID=9170220

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7606832A Granted FR2344123A1 (fr) 1976-03-10 1976-03-10 Procede de croissance epitaxiale a temperature homogene et basse

Country Status (6)

Country Link
US (1) US4086109A (enExample)
JP (1) JPS52123388A (enExample)
CA (1) CA1086611A (enExample)
DE (1) DE2709447A1 (enExample)
FR (1) FR2344123A1 (enExample)
GB (1) GB1572018A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5250148A (en) * 1985-05-15 1993-10-05 Research Development Corporation Process for growing GaAs monocrystal film
US4783320A (en) * 1985-11-25 1988-11-08 The United States Of America As Represented By The Secretary Of The Air Force Rapid synthesis of indium phosphide
US4689094A (en) * 1985-12-24 1987-08-25 Raytheon Company Compensation doping of group III-V materials

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3145125A (en) * 1961-07-10 1964-08-18 Ibm Method of synthesizing iii-v compound semiconductor epitaxial layers having a specified conductivity type without impurity additions
US3975218A (en) * 1972-04-28 1976-08-17 Semimetals, Inc. Process for production of III-V compound epitaxial crystals
US3762945A (en) * 1972-05-01 1973-10-02 Bell Telephone Labor Inc Technique for the fabrication of a millimeter wave beam lead schottkybarrier device
JPS5127525B2 (enExample) * 1972-07-07 1976-08-13
JPS5333390B2 (enExample) * 1974-02-18 1978-09-13

Also Published As

Publication number Publication date
US4086109A (en) 1978-04-25
DE2709447A1 (de) 1977-09-22
GB1572018A (en) 1980-07-23
FR2344123B1 (enExample) 1978-08-25
JPS52123388A (en) 1977-10-17
JPS548627B2 (enExample) 1979-04-17
CA1086611A (en) 1980-09-30

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Legal Events

Date Code Title Description
CD Change of name or company name
ST Notification of lapse