DE2708126A1 - Speicherschaltung mit dynamischen speicherzellen - Google Patents
Speicherschaltung mit dynamischen speicherzellenInfo
- Publication number
- DE2708126A1 DE2708126A1 DE19772708126 DE2708126A DE2708126A1 DE 2708126 A1 DE2708126 A1 DE 2708126A1 DE 19772708126 DE19772708126 DE 19772708126 DE 2708126 A DE2708126 A DE 2708126A DE 2708126 A1 DE2708126 A1 DE 2708126A1
- Authority
- DE
- Germany
- Prior art keywords
- memory
- memory according
- bipolar transistor
- base
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 230000015654 memory Effects 0.000 title claims description 110
- 230000005669 field effect Effects 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 14
- 238000003860 storage Methods 0.000 claims description 14
- 238000001465 metallisation Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- 238000002955 isolation Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- 230000007704 transition Effects 0.000 claims description 2
- 210000004027 cell Anatomy 0.000 description 54
- 238000000034 method Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 230000014759 maintenance of location Effects 0.000 description 5
- 238000012856 packing Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000001419 dependent effect Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 101100136648 Mus musculus Pign gene Proteins 0.000 description 1
- 206010067482 No adverse event Diseases 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010327 methods by industry Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 210000000352 storage cell Anatomy 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/10—DRAM devices comprising bipolar components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
- H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/662,492 US4090254A (en) | 1976-03-01 | 1976-03-01 | Charge injector transistor memory |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2708126A1 true DE2708126A1 (de) | 1977-09-15 |
Family
ID=24657943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19772708126 Ceased DE2708126A1 (de) | 1976-03-01 | 1977-02-25 | Speicherschaltung mit dynamischen speicherzellen |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4090254A (enExample) |
| JP (1) | JPS52106280A (enExample) |
| CA (1) | CA1097813A (enExample) |
| DE (1) | DE2708126A1 (enExample) |
| FR (1) | FR2343312A1 (enExample) |
| GB (1) | GB1571424A (enExample) |
| IT (1) | IT1079558B (enExample) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4247861A (en) * | 1979-03-09 | 1981-01-27 | Rca Corporation | High performance electrically alterable read-only memory (EAROM) |
| US4276616A (en) * | 1979-04-23 | 1981-06-30 | Fairchild Camera & Instrument Corp. | Merged bipolar/field-effect bistable memory cell |
| JPS56163585A (en) * | 1980-05-17 | 1981-12-16 | Semiconductor Res Found | Semiconductor memory |
| US4395723A (en) * | 1980-05-27 | 1983-07-26 | Eliyahou Harari | Floating substrate dynamic RAM cell with lower punch-through means |
| DE3330013A1 (de) * | 1983-08-19 | 1985-02-28 | Siemens AG, 1000 Berlin und 8000 München | Statische speicherzelle |
| JPS60136084A (ja) * | 1983-12-26 | 1985-07-19 | Hitachi Ltd | 半導体集積回路装置 |
| US4598390A (en) * | 1984-06-25 | 1986-07-01 | International Business Machines Corporation | Random access memory RAM employing complementary transistor switch (CTS) memory cells |
| US4578779A (en) * | 1984-06-25 | 1986-03-25 | International Business Machines Corporation | Voltage mode operation scheme for bipolar arrays |
| US4596002A (en) * | 1984-06-25 | 1986-06-17 | International Business Machines Corporation | Random access memory RAM employing complementary transistor switch (CTS) memory cells |
| US4791611A (en) * | 1985-09-11 | 1988-12-13 | University Of Waterloo | VLSI dynamic memory |
| US5060194A (en) * | 1989-03-31 | 1991-10-22 | Kabushiki Kaisha Toshiba | Semiconductor memory device having a bicmos memory cell |
| TW260816B (enExample) * | 1991-12-16 | 1995-10-21 | Philips Nv | |
| TW289168B (enExample) * | 1991-12-16 | 1996-10-21 | Philips Nv | |
| US5448513A (en) * | 1993-12-02 | 1995-09-05 | Regents Of The University Of California | Capacitorless DRAM device on silicon-on-insulator substrate |
| US5835436A (en) | 1995-07-03 | 1998-11-10 | Mitsubishi Denki Kabushiki Kaisha | Dynamic type semiconductor memory device capable of transferring data between array blocks at high speed |
| US5909400A (en) * | 1997-08-22 | 1999-06-01 | International Business Machines Corporation | Three device BICMOS gain cell |
| US6229161B1 (en) | 1998-06-05 | 2001-05-08 | Stanford University | Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches |
| US6690038B1 (en) | 1999-06-05 | 2004-02-10 | T-Ram, Inc. | Thyristor-based device over substrate surface |
| US6621725B2 (en) * | 2000-08-17 | 2003-09-16 | Kabushiki Kaisha Toshiba | Semiconductor memory device with floating storage bulk region and method of manufacturing the same |
| US6727528B1 (en) | 2001-03-22 | 2004-04-27 | T-Ram, Inc. | Thyristor-based device including trench dielectric isolation for thyristor-body regions |
| US7456439B1 (en) | 2001-03-22 | 2008-11-25 | T-Ram Semiconductor, Inc. | Vertical thyristor-based memory with trench isolation and its method of fabrication |
| US6804162B1 (en) | 2001-04-05 | 2004-10-12 | T-Ram, Inc. | Read-modify-write memory using read-or-write banks |
| US6583452B1 (en) | 2001-12-17 | 2003-06-24 | T-Ram, Inc. | Thyristor-based device having extended capacitive coupling |
| US6832300B2 (en) | 2002-03-20 | 2004-12-14 | Hewlett-Packard Development Company, L.P. | Methods and apparatus for control of asynchronous cache |
| KR100620658B1 (ko) * | 2004-05-17 | 2006-09-14 | 주식회사 하이닉스반도체 | 나노 튜브 셀 및 그 나노 튜브 셀과 이중 비트라인 센싱구조를 갖는 셀 어레이 회로 |
| US7638385B2 (en) * | 2005-05-02 | 2009-12-29 | Semiconductor Components Industries, Llc | Method of forming a semiconductor device and structure therefor |
| US8014199B2 (en) * | 2006-05-22 | 2011-09-06 | Spansion Llc | Memory system with switch element |
| US7781797B2 (en) * | 2006-06-29 | 2010-08-24 | International Business Machines Corporation | One-transistor static random access memory with integrated vertical PNPN device |
| US8035126B2 (en) * | 2007-10-29 | 2011-10-11 | International Business Machines Corporation | One-transistor static random access memory with integrated vertical PNPN device |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3390273A (en) * | 1966-08-08 | 1968-06-25 | Fairchild Camera Instr Co | Electronic shutter with gating and storage features |
| US3697962A (en) * | 1970-11-27 | 1972-10-10 | Ibm | Two device monolithic bipolar memory array |
| US3699540A (en) * | 1970-12-31 | 1972-10-17 | Bell Telephone Labor Inc | Two-terminal transistor memory utilizing collector-base avalanche breakdown |
| BE792293A (fr) * | 1971-12-09 | 1973-03-30 | Western Electric Co | Dispositif de memoire a semi-conducteur |
| US3827034A (en) * | 1972-09-14 | 1974-07-30 | Ferranti Ltd | Semiconductor information storage devices |
| US3949243A (en) * | 1973-10-18 | 1976-04-06 | Fairchild Camera And Instrument Corporation | Bipolar memory circuit |
-
1976
- 1976-03-01 US US05/662,492 patent/US4090254A/en not_active Expired - Lifetime
-
1977
- 1977-01-18 FR FR7702065A patent/FR2343312A1/fr active Granted
- 1977-02-04 IT IT19958/77A patent/IT1079558B/it active
- 1977-02-10 JP JP1315477A patent/JPS52106280A/ja active Pending
- 1977-02-15 GB GB6324/77A patent/GB1571424A/en not_active Expired
- 1977-02-21 CA CA272,249A patent/CA1097813A/en not_active Expired
- 1977-02-25 DE DE19772708126 patent/DE2708126A1/de not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| GB1571424A (en) | 1980-07-16 |
| JPS52106280A (en) | 1977-09-06 |
| FR2343312A1 (fr) | 1977-09-30 |
| US4090254A (en) | 1978-05-16 |
| CA1097813A (en) | 1981-03-17 |
| IT1079558B (it) | 1985-05-13 |
| FR2343312B1 (enExample) | 1979-03-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8125 | Change of the main classification | ||
| 8131 | Rejection |