DE2707693C3 - Verfahren zum Herstellen von dotierten Zonen einer bestimmten Leitungsart in einem Halbleitersubstrat mittels Ionenimplantation - Google Patents
Verfahren zum Herstellen von dotierten Zonen einer bestimmten Leitungsart in einem Halbleitersubstrat mittels IonenimplantationInfo
- Publication number
- DE2707693C3 DE2707693C3 DE2707693A DE2707693A DE2707693C3 DE 2707693 C3 DE2707693 C3 DE 2707693C3 DE 2707693 A DE2707693 A DE 2707693A DE 2707693 A DE2707693 A DE 2707693A DE 2707693 C3 DE2707693 C3 DE 2707693C3
- Authority
- DE
- Germany
- Prior art keywords
- layer
- ion implantation
- dopant
- openings
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005468 ion implantation Methods 0.000 title claims description 33
- 239000000758 substrate Substances 0.000 title claims description 26
- 239000004065 semiconductor Substances 0.000 title claims description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 36
- 239000002019 doping agent Substances 0.000 claims description 27
- 239000000377 silicon dioxide Substances 0.000 claims description 24
- 235000012239 silicon dioxide Nutrition 0.000 claims description 23
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 17
- 238000009792 diffusion process Methods 0.000 claims description 13
- 238000002161 passivation Methods 0.000 claims description 12
- 150000002500 ions Chemical class 0.000 claims description 9
- 239000012298 atmosphere Substances 0.000 claims description 5
- 238000006073 displacement reaction Methods 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 description 6
- 229910052906 cristobalite Inorganic materials 0.000 description 6
- 229910052682 stishovite Inorganic materials 0.000 description 6
- 229910052905 tridymite Inorganic materials 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- -1 silicon ions Chemical class 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910005091 Si3N Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000003017 phosphorus Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/131—Reactive ion etching rie
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/143—Shadow masking
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/965—Shaped junction formation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Bipolar Transistors (AREA)
- Weting (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/673,314 US4060427A (en) | 1976-04-05 | 1976-04-05 | Method of forming an integrated circuit region through the combination of ion implantation and diffusion steps |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2707693A1 DE2707693A1 (de) | 1977-10-06 |
| DE2707693B2 DE2707693B2 (de) | 1978-12-07 |
| DE2707693C3 true DE2707693C3 (de) | 1979-08-16 |
Family
ID=24702144
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2707693A Expired DE2707693C3 (de) | 1976-04-05 | 1977-02-23 | Verfahren zum Herstellen von dotierten Zonen einer bestimmten Leitungsart in einem Halbleitersubstrat mittels Ionenimplantation |
Country Status (12)
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4131497A (en) * | 1977-07-12 | 1978-12-26 | International Business Machines Corporation | Method of manufacturing self-aligned semiconductor devices |
| US4119446A (en) * | 1977-08-11 | 1978-10-10 | Motorola Inc. | Method for forming a guarded Schottky barrier diode by ion-implantation |
| US4149904A (en) * | 1977-10-21 | 1979-04-17 | Ncr Corporation | Method for forming ion-implanted self-aligned gate structure by controlled ion scattering |
| FR2417909A1 (fr) * | 1978-02-17 | 1979-09-14 | Thaille Jean Louis | Regulateur de pression (ou charge) acoustique |
| US4176029A (en) * | 1978-03-02 | 1979-11-27 | Sperry Rand Corporation | Subminiature bore and conductor formation |
| US4263603A (en) * | 1978-03-02 | 1981-04-21 | Sperry Corporation | Subminiature bore and conductor formation |
| US4157269A (en) * | 1978-06-06 | 1979-06-05 | International Business Machines Corporation | Utilizing polysilicon diffusion sources and special masking techniques |
| US4262399A (en) * | 1978-11-08 | 1981-04-21 | General Electric Co. | Ultrasonic transducer fabricated as an integral park of a monolithic integrated circuit |
| US4199380A (en) * | 1978-11-13 | 1980-04-22 | Motorola, Inc. | Integrated circuit method |
| US4198250A (en) * | 1979-02-05 | 1980-04-15 | Intel Corporation | Shadow masking process for forming source and drain regions for field-effect transistors and like regions |
| DE2917455A1 (de) * | 1979-04-30 | 1980-11-13 | Ibm Deutschland | Verfahren zur vollstaendigen ausheilung von gitterdefekten in durch ionenimplantation von phosphor erzeugten n-leitenden zonen einer siliciumhalbleitervorrichtung und zugehoerige siliciumhalbleitervorrichtung |
| US4371423A (en) * | 1979-09-04 | 1983-02-01 | Vlsi Technology Research Association | Method of manufacturing semiconductor device utilizing a lift-off technique |
| US4309812A (en) * | 1980-03-03 | 1982-01-12 | International Business Machines Corporation | Process for fabricating improved bipolar transistor utilizing selective etching |
| US4318751A (en) * | 1980-03-13 | 1982-03-09 | International Business Machines Corporation | Self-aligned process for providing an improved high performance bipolar transistor |
| US4334348A (en) * | 1980-07-21 | 1982-06-15 | Data General Corporation | Retro-etch process for forming gate electrodes of MOS integrated circuits |
| JPS5870570A (ja) * | 1981-09-28 | 1983-04-27 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH0654778B2 (ja) * | 1985-04-23 | 1994-07-20 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JPS6393153A (ja) * | 1986-10-07 | 1988-04-23 | Toshiba Corp | 半導体装置の製造方法 |
| US5098851A (en) * | 1989-02-10 | 1992-03-24 | Hitachi, Ltd. | Fabricating a semiconductor photodetector by annealing to smooth the PN junction |
| US5244821A (en) * | 1991-06-07 | 1993-09-14 | At&T Bell Laboratories | Bipolar fabrication method |
| US5766695A (en) * | 1996-11-27 | 1998-06-16 | Hughes Electronics Corporation | Method for reducing surface layer defects in semiconductor materials having a volatile species |
| US6331468B1 (en) * | 1998-05-11 | 2001-12-18 | Lsi Logic Corporation | Formation of integrated circuit structure using one or more silicon layers for implantation and out-diffusion in formation of defect-free source/drain regions and also for subsequent formation of silicon nitride spacers |
| JP2000040691A (ja) * | 1998-07-21 | 2000-02-08 | Oki Electric Ind Co Ltd | 半導体装置製造方法 |
| US8791546B2 (en) * | 2010-10-21 | 2014-07-29 | Freescale Semiconductor, Inc. | Bipolar transistors having emitter-base junctions of varying depths and/or doping concentrations |
| CN112053952B (zh) * | 2019-06-05 | 2022-02-11 | 上海先进半导体制造有限公司 | 高耐压大电流增益的衬底pnp晶体管及其制造方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE756040A (fr) * | 1969-09-15 | 1971-02-15 | Western Electric Co | Procede pour former, par implantation d'ions, une zone localisee dans un corps de semi-conducteur |
| DE1952632A1 (de) * | 1969-10-18 | 1971-04-22 | Licentia Gmbh | Verfahren zum Herstellen einer Diffusionszone |
| US3717790A (en) * | 1971-06-24 | 1973-02-20 | Bell Telephone Labor Inc | Ion implanted silicon diode array targets for electron beam camera tubes |
| US3764423A (en) * | 1972-03-15 | 1973-10-09 | Bell Telephone Labor Inc | Removal of dielectric ledges on semiconductors |
| JPS5242842B2 (US20100268047A1-20101021-C00003.png) * | 1972-09-05 | 1977-10-27 | ||
| US3947866A (en) * | 1973-06-25 | 1976-03-30 | Signetics Corporation | Ion implanted resistor having controlled temperature coefficient and method |
| DE2341154C2 (de) * | 1973-08-14 | 1975-06-26 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung einer Zweiphasen-Ladungsverschiebeanordnung |
| JPS50120257A (US20100268047A1-20101021-C00003.png) * | 1974-03-05 | 1975-09-20 |
-
1976
- 1976-04-05 US US05/673,314 patent/US4060427A/en not_active Expired - Lifetime
-
1977
- 1977-02-18 FR FR7705178A patent/FR2347778A1/fr active Granted
- 1977-02-23 DE DE2707693A patent/DE2707693C3/de not_active Expired
- 1977-02-25 IT IT20665/77A patent/IT1118012B/it active
- 1977-02-28 BE BE175352A patent/BE851929A/xx not_active IP Right Cessation
- 1977-03-04 SE SE7702443A patent/SE7702443L/xx not_active Application Discontinuation
- 1977-03-08 CA CA273,411A patent/CA1082373A/en not_active Expired
- 1977-03-09 JP JP52024960A patent/JPS6025894B2/ja not_active Expired
- 1977-03-25 GB GB12734/77A patent/GB1516292A/en not_active Expired
- 1977-03-25 AU AU23652/77A patent/AU504131B2/en not_active Expired
- 1977-03-28 ZA ZA00771835A patent/ZA771835B/xx unknown
- 1977-04-04 NL NL7703632A patent/NL7703632A/xx not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6025894B2 (ja) | 1985-06-20 |
| GB1516292A (en) | 1978-07-05 |
| AU504131B2 (en) | 1979-10-04 |
| ZA771835B (en) | 1978-11-29 |
| SE7702443L (sv) | 1977-10-06 |
| IT1118012B (it) | 1986-02-24 |
| US4060427A (en) | 1977-11-29 |
| DE2707693A1 (de) | 1977-10-06 |
| NL7703632A (nl) | 1977-10-07 |
| DE2707693B2 (de) | 1978-12-07 |
| JPS52122470A (en) | 1977-10-14 |
| AU2365277A (en) | 1978-09-28 |
| FR2347778A1 (fr) | 1977-11-04 |
| BE851929A (fr) | 1977-06-16 |
| CA1082373A (en) | 1980-07-22 |
| FR2347778B1 (US20100268047A1-20101021-C00003.png) | 1978-10-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |