DE2657822C2 - - Google Patents

Info

Publication number
DE2657822C2
DE2657822C2 DE2657822A DE2657822A DE2657822C2 DE 2657822 C2 DE2657822 C2 DE 2657822C2 DE 2657822 A DE2657822 A DE 2657822A DE 2657822 A DE2657822 A DE 2657822A DE 2657822 C2 DE2657822 C2 DE 2657822C2
Authority
DE
Germany
Prior art keywords
zone
transistor
base
collector
local
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2657822A
Other languages
German (de)
English (en)
Other versions
DE2657822A1 (de
Inventor
Wolfgang Franz Joseph Son Nl Edlinger
Michel De Caen Fr Brebisson
Jean-Pierre Henri Bieville-Beuville Fr Biet
Jean-Michel Argences Fr Decrouen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE2657822A1 publication Critical patent/DE2657822A1/de
Application granted granted Critical
Publication of DE2657822C2 publication Critical patent/DE2657822C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/643—Combinations of non-inverted vertical BJTs and inverted vertical BJTs
    • H10P32/1414—
    • H10P32/171—
    • H10W10/011—
    • H10W10/10—
    • H10W72/00—

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE19762657822 1975-12-29 1976-12-21 Integrierte schaltung mit komplementaeren bipolaren transistoren Granted DE2657822A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7539963A FR2337432A1 (fr) 1975-12-29 1975-12-29 Perfectionnement a la structure des circuits integres a transistors bipolaires complementaires et procede d'obtention

Publications (2)

Publication Number Publication Date
DE2657822A1 DE2657822A1 (de) 1977-07-07
DE2657822C2 true DE2657822C2 (cg-RX-API-DMAC10.html) 1989-10-05

Family

ID=9164256

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19762657822 Granted DE2657822A1 (de) 1975-12-29 1976-12-21 Integrierte schaltung mit komplementaeren bipolaren transistoren

Country Status (8)

Country Link
JP (1) JPS5283080A (cg-RX-API-DMAC10.html)
AU (1) AU506891B2 (cg-RX-API-DMAC10.html)
CH (1) CH609489A5 (cg-RX-API-DMAC10.html)
DE (1) DE2657822A1 (cg-RX-API-DMAC10.html)
FR (1) FR2337432A1 (cg-RX-API-DMAC10.html)
GB (1) GB1571621A (cg-RX-API-DMAC10.html)
NL (1) NL7614383A (cg-RX-API-DMAC10.html)
SE (1) SE7614560L (cg-RX-API-DMAC10.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5470781A (en) * 1977-11-16 1979-06-06 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacture
US4338622A (en) * 1979-06-29 1982-07-06 International Business Machines Corporation Self-aligned semiconductor circuits and process therefor
US4539742A (en) * 1981-06-22 1985-09-10 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device and method for manufacturing the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3624467A (en) * 1969-02-17 1971-11-30 Texas Instruments Inc Monolithic integrated-circuit structure and method of fabrication
NL7107040A (cg-RX-API-DMAC10.html) * 1971-05-22 1972-11-24
DE2212168C2 (de) * 1972-03-14 1982-10-21 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte Halbleiteranordnung
US3904450A (en) * 1974-04-26 1975-09-09 Bell Telephone Labor Inc Method of fabricating injection logic integrated circuits using oxide isolation

Also Published As

Publication number Publication date
JPS5283080A (en) 1977-07-11
AU2090976A (en) 1978-06-29
NL7614383A (nl) 1977-07-01
AU506891B2 (en) 1980-01-24
CH609489A5 (en) 1979-02-28
DE2657822A1 (de) 1977-07-07
FR2337432B1 (cg-RX-API-DMAC10.html) 1979-06-22
FR2337432A1 (fr) 1977-07-29
SE7614560L (sv) 1977-06-30
JPS5514539B2 (cg-RX-API-DMAC10.html) 1980-04-17
GB1571621A (en) 1980-07-16

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Legal Events

Date Code Title Description
OD Request for examination
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee