DE2657439A1 - Verfahren zum analysieren einer materialprobe aus einem isoliermaterial durch photoelektronische spektrometrie und probenhalter zur durchfuehrung des verfahrens - Google Patents
Verfahren zum analysieren einer materialprobe aus einem isoliermaterial durch photoelektronische spektrometrie und probenhalter zur durchfuehrung des verfahrensInfo
- Publication number
- DE2657439A1 DE2657439A1 DE19762657439 DE2657439A DE2657439A1 DE 2657439 A1 DE2657439 A1 DE 2657439A1 DE 19762657439 DE19762657439 DE 19762657439 DE 2657439 A DE2657439 A DE 2657439A DE 2657439 A1 DE2657439 A1 DE 2657439A1
- Authority
- DE
- Germany
- Prior art keywords
- sample
- sample holder
- recess
- material sample
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims description 25
- 239000011810 insulating material Substances 0.000 title claims description 10
- 238000004611 spectroscopical analysis Methods 0.000 title claims description 7
- 239000000523 sample Substances 0.000 title 2
- 239000000463 material Substances 0.000 claims description 52
- 230000005855 radiation Effects 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 230000005684 electric field Effects 0.000 claims description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 230000000694 effects Effects 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000004458 analytical method Methods 0.000 description 7
- 239000000843 powder Substances 0.000 description 7
- 238000005259 measurement Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 5
- 229910000423 chromium oxide Inorganic materials 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 238000006386 neutralization reaction Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/227—Measuring photoelectric effect, e.g. photoelectron emission microscopy [PEEM]
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7539096A FR2335839A1 (fr) | 1975-12-19 | 1975-12-19 | Procede d'analyse d'echantillons en matiere isolante par spectrometrie photo-electronique et porte-echantillon pour la mise en oeuvre dudit procede |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2657439A1 true DE2657439A1 (de) | 1977-07-07 |
Family
ID=9163968
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19762657439 Withdrawn DE2657439A1 (de) | 1975-12-19 | 1976-12-17 | Verfahren zum analysieren einer materialprobe aus einem isoliermaterial durch photoelektronische spektrometrie und probenhalter zur durchfuehrung des verfahrens |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4097738A (cg-RX-API-DMAC7.html) |
| JP (1) | JPS5277792A (cg-RX-API-DMAC7.html) |
| BE (1) | BE849129A (cg-RX-API-DMAC7.html) |
| DE (1) | DE2657439A1 (cg-RX-API-DMAC7.html) |
| ES (1) | ES454412A1 (cg-RX-API-DMAC7.html) |
| FR (1) | FR2335839A1 (cg-RX-API-DMAC7.html) |
| GB (1) | GB1556075A (cg-RX-API-DMAC7.html) |
| SE (1) | SE409906B (cg-RX-API-DMAC7.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0163291A3 (en) * | 1984-05-30 | 1987-03-25 | Photo Acoustic Technology, Inc. | Apparatus and technique for monitoring photoelectron emission from surfaces |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3128814A1 (de) * | 1981-07-21 | 1983-02-10 | Siemens AG, 1000 Berlin und 8000 München | Elektrisch leitende probenhalterung fuer die analysentechnik der sekundaerionen-massenspektrometrie |
| JPH0711495B2 (ja) * | 1982-05-07 | 1995-02-08 | 株式会社日立製作所 | 光電子測定方法 |
| JPS60121652A (ja) * | 1983-12-02 | 1985-06-29 | Hitachi Ltd | 質量分析用試料ホルダ− |
| JPS60135846A (ja) * | 1983-12-26 | 1985-07-19 | Anelva Corp | 二次イオン質量分析方法 |
| EP0178431B1 (de) * | 1984-09-18 | 1990-02-28 | ICT Integrated Circuit Testing Gesellschaft für HalbleiterprÀ¼ftechnik mbH | Gegenfeld-Spektrometer für die Elektronenstrahl-Messtechnik |
| US6146135A (en) * | 1991-08-19 | 2000-11-14 | Tadahiro Ohmi | Oxide film forming method |
| EP0661385A1 (en) * | 1991-08-19 | 1995-07-05 | OHMI, Tadahiro | Method for forming oxide film |
| US8307665B2 (en) * | 2006-04-06 | 2012-11-13 | National Institute Of Advanced Industrial Science And Technology | Sample cooling apparatus |
| CN114047215B (zh) * | 2021-10-20 | 2023-08-15 | 北京科技大学顺德研究生院 | 一种用于消除被测样品表面不均匀荷电的装置及方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1282498A (en) * | 1969-11-17 | 1972-07-19 | Ass Elect Ind | Improvements in or relating to apparatus for use in electron spectroscopy |
| US3749926A (en) * | 1971-08-03 | 1973-07-31 | Du Pont | Charged particle energy analysis |
| US3822383A (en) * | 1973-04-13 | 1974-07-02 | Weston Instruments Inc | Profile gauging system |
-
1975
- 1975-12-19 FR FR7539096A patent/FR2335839A1/fr active Granted
-
1976
- 1976-12-07 BE BE173020A patent/BE849129A/xx unknown
- 1976-12-15 GB GB52346/76A patent/GB1556075A/en not_active Expired
- 1976-12-16 SE SE7614161A patent/SE409906B/xx unknown
- 1976-12-17 US US05/751,374 patent/US4097738A/en not_active Expired - Lifetime
- 1976-12-17 DE DE19762657439 patent/DE2657439A1/de not_active Withdrawn
- 1976-12-18 ES ES454412A patent/ES454412A1/es not_active Expired
- 1976-12-20 JP JP51153289A patent/JPS5277792A/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0163291A3 (en) * | 1984-05-30 | 1987-03-25 | Photo Acoustic Technology, Inc. | Apparatus and technique for monitoring photoelectron emission from surfaces |
Also Published As
| Publication number | Publication date |
|---|---|
| BE849129A (fr) | 1977-04-01 |
| US4097738A (en) | 1978-06-27 |
| SE7614161L (sv) | 1977-06-20 |
| GB1556075A (en) | 1979-11-21 |
| JPS5277792A (en) | 1977-06-30 |
| FR2335839B1 (cg-RX-API-DMAC7.html) | 1980-01-25 |
| ES454412A1 (es) | 1977-12-01 |
| SE409906B (sv) | 1979-09-10 |
| FR2335839A1 (fr) | 1977-07-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OF | Willingness to grant licences before publication of examined application | ||
| 8139 | Disposal/non-payment of the annual fee |