DE2657415C2 - Verfahren zum Eindiffundieren von Fremdstoffen in ein Halbleitersubstrat - Google Patents

Verfahren zum Eindiffundieren von Fremdstoffen in ein Halbleitersubstrat

Info

Publication number
DE2657415C2
DE2657415C2 DE2657415A DE2657415A DE2657415C2 DE 2657415 C2 DE2657415 C2 DE 2657415C2 DE 2657415 A DE2657415 A DE 2657415A DE 2657415 A DE2657415 A DE 2657415A DE 2657415 C2 DE2657415 C2 DE 2657415C2
Authority
DE
Germany
Prior art keywords
diffusion
ammonia
silicon dioxide
foreign matter
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2657415A
Other languages
German (de)
English (en)
Other versions
DE2657415A1 (de
Inventor
Ginjiro Ashiya Kanbara
Susumu Ibaraki Koike
Toshio Ohtsu Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP50152662A external-priority patent/JPS5275267A/ja
Priority claimed from JP50152664A external-priority patent/JPS5814741B2/ja
Priority claimed from JP50152659A external-priority patent/JPS5814740B2/ja
Priority claimed from JP15266875A external-priority patent/JPS5275270A/ja
Priority claimed from JP15266175A external-priority patent/JPS5275266A/ja
Priority claimed from JP15266075A external-priority patent/JPS5275273A/ja
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of DE2657415A1 publication Critical patent/DE2657415A1/de
Application granted granted Critical
Publication of DE2657415C2 publication Critical patent/DE2657415C2/de
Expired legal-status Critical Current

Links

Classifications

    • H10P32/141—
    • H10P32/171—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/003—Anneal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/02—Contacts, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/033—Diffusion of aluminum
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/112—Nitridation, direct, of silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/114—Nitrides of silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/141—Self-alignment coat gate

Landscapes

  • Formation Of Insulating Films (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
DE2657415A 1975-12-19 1976-12-17 Verfahren zum Eindiffundieren von Fremdstoffen in ein Halbleitersubstrat Expired DE2657415C2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP50152662A JPS5275267A (en) 1975-12-19 1975-12-19 Production of semiconductor device
JP50152664A JPS5814741B2 (ja) 1975-12-19 1975-12-19 ハンドウタイチユウヘノフジユンブツカクサンホウホウ
JP50152659A JPS5814740B2 (ja) 1975-12-19 1975-12-19 ハンドウタイチユウヘノフジユンブツカクサンホウホウ
JP15266875A JPS5275270A (en) 1975-12-19 1975-12-19 Method of diffusing impurity in semiconductor
JP15266175A JPS5275266A (en) 1975-12-19 1975-12-19 Production of semiconductor device
JP15266075A JPS5275273A (en) 1975-12-19 1975-12-19 Method of forming boron nitride-boron oxidesilicon oxide mixed film

Publications (2)

Publication Number Publication Date
DE2657415A1 DE2657415A1 (de) 1977-07-07
DE2657415C2 true DE2657415C2 (de) 1983-03-31

Family

ID=27553110

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2657415A Expired DE2657415C2 (de) 1975-12-19 1976-12-17 Verfahren zum Eindiffundieren von Fremdstoffen in ein Halbleitersubstrat

Country Status (4)

Country Link
US (1) US4102715A (enExample)
DE (1) DE2657415C2 (enExample)
FR (1) FR2335950A1 (enExample)
GB (1) GB1581726A (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5795625A (en) 1980-12-04 1982-06-14 Toshiba Corp Manufacture of semiconductor device
US4782036A (en) * 1986-08-29 1988-11-01 Siemens Aktiengesellschaft Process for producing a predetermined doping in side walls and bases of trenches etched into semiconductor substrates
JP3131436B2 (ja) * 1990-02-26 2001-01-31 株式会社東芝 半導体装置の製造方法
KR19990064285A (ko) * 1995-10-04 1999-07-26 피터 엔. 데트킨 도핑된 글라스로부터의 소스/드레인의 형성
US6333245B1 (en) 1999-12-21 2001-12-25 International Business Machines Corporation Method for introducing dopants into semiconductor devices using a germanium oxide sacrificial layer
US7851339B2 (en) * 2008-05-29 2010-12-14 Promos Technologies Pte. Ltd. Method of repairing deep subsurface defects in a silicon substrate that includes diffusing negatively charged ions into the substrate from a sacrificial oxide layer
TWI501292B (zh) * 2012-09-26 2015-09-21 財團法人工業技術研究院 形成圖案化摻雜區的方法
US20140361407A1 (en) * 2013-06-05 2014-12-11 SCHMID Group Silicon material substrate doping method, structure and applications
JP6810578B2 (ja) * 2016-11-18 2021-01-06 株式会社Ｓｃｒｅｅｎホールディングス ドーパント導入方法および熱処理方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3437533A (en) * 1966-12-13 1969-04-08 Rca Corp Method of fabricating semiconductor devices
DE2109300A1 (en) * 1971-02-26 1972-09-21 Siemens Ag Formation of masking, passivating or doping coatings - or contacts - on surfaces of semiconductors
GB1363121A (en) * 1972-04-25 1974-08-14 Ferranti Ltd Manufacture of semiconductor devices
US3808060A (en) * 1972-07-05 1974-04-30 Motorola Inc Method of doping semiconductor substrates
US3865655A (en) * 1973-09-24 1975-02-11 Rca Corp Method for diffusing impurities into nitride semiconductor crystals
US3869322A (en) * 1973-10-15 1975-03-04 Ibm Automatic P-N junction formation during growth of a heterojunction
US4006046A (en) * 1975-04-21 1977-02-01 Trw Inc. Method for compensating for emitter-push effect in the fabrication of transistors

Also Published As

Publication number Publication date
GB1581726A (en) 1980-12-17
FR2335950A1 (fr) 1977-07-15
US4102715A (en) 1978-07-25
DE2657415A1 (de) 1977-07-07
FR2335950B1 (enExample) 1981-06-12

Similar Documents

Publication Publication Date Title
DE2623009C2 (de) Verfahren zum Herstellen einer Halbleiteranordnung
DE2618733C2 (de) Halbleiterbauelement
DE2605830C3 (de) Verfahren zur Herstellung eines Halbleiterbauelements
DE1589810B2 (de) Passiviertes halbleiterbauelement und verfahren zu seiner herstellung
DE3030385C2 (de) Verfahren zur Herstellung einer MOS-Halbleitervorrichtung
DE1086512B (de) Verfahren zum Herstellen eines gleichrichtenden UEberganges in einem Siliziumkoerper
DE3446961A1 (de) Verfahren zur herstellung einer sic-halbleitervorrichtung
DE2547304C2 (enExample)
DE2812658B2 (de) Verfahren zum selektiven Diffundieren von Aluminium in ein Einkristall-Siliciumhalbleitersubstrat
DE2657415C2 (de) Verfahren zum Eindiffundieren von Fremdstoffen in ein Halbleitersubstrat
DE2005271C3 (de) Epitaxialverfahren zum Aufwachsen von Halbleitermaterial auf einem dotierten Halbleitersubstrat
DE1913718C2 (de) Verfahren zur Herstellung eines Halbleiterbauelements
DE2225374B2 (de) Verfahren zum herstellen eines mos-feldeffekttransistors
DE1961634A1 (de) Verfahren zur Herstellung eines Misfet
DE1803024A1 (de) Integriertes Halbleiterbauelement und Verfahren zu seiner Herstellung
DE2031235C3 (de) Verfahren zum Herstellen eines Halbleiterbauelementes
DE1964837A1 (de) Verfahren zur Herstellung einer Halbleitervorrichtung und insbesondere lichtemittierender Halbleiterdioden
DE2316095A1 (de) Verfahren zur herstellung integrierter schaltungen mit komplementaer-kanal-feldeffekttransistoren
DE68918818T2 (de) Verfahren zur Herstellung von Halbleiterbauelementen durch selektives, U.V.-unterstütztes Aetzen von Mehrschichten.
DE1789204C2 (de) Verfahren zur Herstellung eines Halbleiterbauelements
DE1564086B2 (de) Verfahren zum herstellen eines halbleitersystems
DE2060161A1 (de) Verfahren zur Herstellung von selbstjustierten Feldeffekttransistoren hoher Stabilitaet
DE2658304A1 (de) Halbleitervorrichtung
DE2219696A1 (de) Verfahren zur Isolationsbereichsbildung
DE2654689C2 (de) Verfahren zur Herstellung einer Halbleitervorrichtung mit einem bipolaren Transistor

Legal Events

Date Code Title Description
D2 Grant after examination
8364 No opposition during term of opposition