FR2335950B1 - - Google Patents

Info

Publication number
FR2335950B1
FR2335950B1 FR7638415A FR7638415A FR2335950B1 FR 2335950 B1 FR2335950 B1 FR 2335950B1 FR 7638415 A FR7638415 A FR 7638415A FR 7638415 A FR7638415 A FR 7638415A FR 2335950 B1 FR2335950 B1 FR 2335950B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7638415A
Other languages
French (fr)
Other versions
FR2335950A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP50152662A external-priority patent/JPS5275267A/ja
Priority claimed from JP50152664A external-priority patent/JPS5814741B2/ja
Priority claimed from JP50152659A external-priority patent/JPS5814740B2/ja
Priority claimed from JP15266875A external-priority patent/JPS5275270A/ja
Priority claimed from JP15266175A external-priority patent/JPS5275266A/ja
Priority claimed from JP15266075A external-priority patent/JPS5275273A/ja
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of FR2335950A1 publication Critical patent/FR2335950A1/fr
Application granted granted Critical
Publication of FR2335950B1 publication Critical patent/FR2335950B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H10P32/141—
    • H10P32/171—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/003—Anneal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/02—Contacts, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/033—Diffusion of aluminum
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/112—Nitridation, direct, of silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/114—Nitrides of silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/141—Self-alignment coat gate
FR7638415A 1975-12-19 1976-12-20 Procede pour realiser la diffusion d'une impurete dans un corps semi-conducteur Granted FR2335950A1 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP50152662A JPS5275267A (en) 1975-12-19 1975-12-19 Production of semiconductor device
JP50152664A JPS5814741B2 (ja) 1975-12-19 1975-12-19 ハンドウタイチユウヘノフジユンブツカクサンホウホウ
JP50152659A JPS5814740B2 (ja) 1975-12-19 1975-12-19 ハンドウタイチユウヘノフジユンブツカクサンホウホウ
JP15266875A JPS5275270A (en) 1975-12-19 1975-12-19 Method of diffusing impurity in semiconductor
JP15266175A JPS5275266A (en) 1975-12-19 1975-12-19 Production of semiconductor device
JP15266075A JPS5275273A (en) 1975-12-19 1975-12-19 Method of forming boron nitride-boron oxidesilicon oxide mixed film

Publications (2)

Publication Number Publication Date
FR2335950A1 FR2335950A1 (fr) 1977-07-15
FR2335950B1 true FR2335950B1 (enExample) 1981-06-12

Family

ID=27553110

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7638415A Granted FR2335950A1 (fr) 1975-12-19 1976-12-20 Procede pour realiser la diffusion d'une impurete dans un corps semi-conducteur

Country Status (4)

Country Link
US (1) US4102715A (enExample)
DE (1) DE2657415C2 (enExample)
FR (1) FR2335950A1 (enExample)
GB (1) GB1581726A (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5795625A (en) 1980-12-04 1982-06-14 Toshiba Corp Manufacture of semiconductor device
US4782036A (en) * 1986-08-29 1988-11-01 Siemens Aktiengesellschaft Process for producing a predetermined doping in side walls and bases of trenches etched into semiconductor substrates
JP3131436B2 (ja) * 1990-02-26 2001-01-31 株式会社東芝 半導体装置の製造方法
KR19990064285A (ko) * 1995-10-04 1999-07-26 피터 엔. 데트킨 도핑된 글라스로부터의 소스/드레인의 형성
US6333245B1 (en) 1999-12-21 2001-12-25 International Business Machines Corporation Method for introducing dopants into semiconductor devices using a germanium oxide sacrificial layer
US7851339B2 (en) * 2008-05-29 2010-12-14 Promos Technologies Pte. Ltd. Method of repairing deep subsurface defects in a silicon substrate that includes diffusing negatively charged ions into the substrate from a sacrificial oxide layer
TWI501292B (zh) * 2012-09-26 2015-09-21 財團法人工業技術研究院 形成圖案化摻雜區的方法
US20140361407A1 (en) * 2013-06-05 2014-12-11 SCHMID Group Silicon material substrate doping method, structure and applications
JP6810578B2 (ja) * 2016-11-18 2021-01-06 株式会社Ｓｃｒｅｅｎホールディングス ドーパント導入方法および熱処理方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3437533A (en) * 1966-12-13 1969-04-08 Rca Corp Method of fabricating semiconductor devices
DE2109300A1 (en) * 1971-02-26 1972-09-21 Siemens Ag Formation of masking, passivating or doping coatings - or contacts - on surfaces of semiconductors
GB1363121A (en) * 1972-04-25 1974-08-14 Ferranti Ltd Manufacture of semiconductor devices
US3808060A (en) * 1972-07-05 1974-04-30 Motorola Inc Method of doping semiconductor substrates
US3865655A (en) * 1973-09-24 1975-02-11 Rca Corp Method for diffusing impurities into nitride semiconductor crystals
US3869322A (en) * 1973-10-15 1975-03-04 Ibm Automatic P-N junction formation during growth of a heterojunction
US4006046A (en) * 1975-04-21 1977-02-01 Trw Inc. Method for compensating for emitter-push effect in the fabrication of transistors

Also Published As

Publication number Publication date
DE2657415C2 (de) 1983-03-31
GB1581726A (en) 1980-12-17
FR2335950A1 (fr) 1977-07-15
US4102715A (en) 1978-07-25
DE2657415A1 (de) 1977-07-07

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Legal Events

Date Code Title Description
ST Notification of lapse