DE2655803C2 - Verfahren zum Behandeln eines ausgewählten Oberflächenbereiches eines Halbleiterelementes - Google Patents

Verfahren zum Behandeln eines ausgewählten Oberflächenbereiches eines Halbleiterelementes

Info

Publication number
DE2655803C2
DE2655803C2 DE2655803A DE2655803A DE2655803C2 DE 2655803 C2 DE2655803 C2 DE 2655803C2 DE 2655803 A DE2655803 A DE 2655803A DE 2655803 A DE2655803 A DE 2655803A DE 2655803 C2 DE2655803 C2 DE 2655803C2
Authority
DE
Germany
Prior art keywords
surface area
film
semiconductor
polymeric material
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2655803A
Other languages
German (de)
English (en)
Other versions
DE2655803A1 (de
Inventor
Alexander John Scotia N.Y. Yerman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE2655803A1 publication Critical patent/DE2655803A1/de
Application granted granted Critical
Publication of DE2655803C2 publication Critical patent/DE2655803C2/de
Expired legal-status Critical Current

Links

Classifications

    • H10P50/00—
    • H10W74/01—
    • H10W74/137—

Landscapes

  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)
DE2655803A 1975-12-11 1976-12-09 Verfahren zum Behandeln eines ausgewählten Oberflächenbereiches eines Halbleiterelementes Expired DE2655803C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US63986875A 1975-12-11 1975-12-11

Publications (2)

Publication Number Publication Date
DE2655803A1 DE2655803A1 (de) 1977-06-16
DE2655803C2 true DE2655803C2 (de) 1986-04-17

Family

ID=24565898

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2655803A Expired DE2655803C2 (de) 1975-12-11 1976-12-09 Verfahren zum Behandeln eines ausgewählten Oberflächenbereiches eines Halbleiterelementes

Country Status (5)

Country Link
JP (1) JPS597213B2 (enExample)
DE (1) DE2655803C2 (enExample)
FR (1) FR2335042A1 (enExample)
GB (1) GB1571999A (enExample)
SE (1) SE418432B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2655725A1 (de) * 1975-12-11 1977-06-16 Gen Electrit Co Halbleiterelement mit einem schutzueberzug
DE2702921A1 (de) * 1976-01-26 1977-09-01 Gen Electric Halbleiterelement mit schutzschicht sowie loesung zur herstellung der schutzschicht

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH661932A5 (en) * 1978-09-18 1987-08-31 Gen Electric Process for the preparation of a coating composition for semiconductor components, this composition, and the use thereof
CH661933A5 (en) * 1978-09-18 1987-08-31 Gen Electric Process for the preparation of a coating composition for the surface of a semiconductor component, this composition, and the use thereof for preventing surface breakdown
JPH0395021U (enExample) * 1990-01-16 1991-09-27
DE19500235A1 (de) * 1995-01-05 1996-07-11 Roth Technik Gmbh Abdeckschicht für elektrische Leiter oder Halbleiter
JP6833864B2 (ja) * 2015-11-05 2021-02-24 アーベーベー・シュバイツ・アーゲーＡＢＢ Ｓｃｈｗｅｉｚ ＡＧ パワー半導体装置およびパワー半導体装置を作製するための方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1464602B2 (de) * 1962-11-30 1970-11-26 Fuji Denki Seizo K.K., Tokio Verfahren zur Oberflächenbehandlung ..on Halbleiteranordnungen
US3615913A (en) * 1968-11-08 1971-10-26 Westinghouse Electric Corp Polyimide and polyamide-polyimide as a semiconductor surface passivator and protectant coating
US3553282A (en) * 1969-09-08 1971-01-05 Gen Electric Siloxane containing polyamide acid blends
US3598784A (en) * 1970-03-11 1971-08-10 Gen Electric Polysiloxane amides
US3740305A (en) * 1971-10-01 1973-06-19 Gen Electric Composite materials bonded with siloxane containing polyimides
JPS5421073B2 (enExample) * 1974-04-15 1979-07-27

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2655725A1 (de) * 1975-12-11 1977-06-16 Gen Electrit Co Halbleiterelement mit einem schutzueberzug
DE2702921A1 (de) * 1976-01-26 1977-09-01 Gen Electric Halbleiterelement mit schutzschicht sowie loesung zur herstellung der schutzschicht

Also Published As

Publication number Publication date
DE2655803A1 (de) 1977-06-16
GB1571999A (en) 1980-07-23
SE418432B (sv) 1981-05-25
JPS597213B2 (ja) 1984-02-17
FR2335042A1 (fr) 1977-07-08
SE7613875L (sv) 1977-06-12
JPS5272578A (en) 1977-06-17
FR2335042B1 (enExample) 1982-10-29

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Legal Events

Date Code Title Description
8120 Willingness to grant licences paragraph 23
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee