GB1571999A - Semiconductors - Google Patents
Semiconductors Download PDFInfo
- Publication number
- GB1571999A GB1571999A GB51668/76A GB5166876A GB1571999A GB 1571999 A GB1571999 A GB 1571999A GB 51668/76 A GB51668/76 A GB 51668/76A GB 5166876 A GB5166876 A GB 5166876A GB 1571999 A GB1571999 A GB 1571999A
- Authority
- GB
- United Kingdom
- Prior art keywords
- surface area
- layer
- semiconductor element
- polymeric material
- bis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P50/00—
-
- H10W74/01—
-
- H10W74/137—
Landscapes
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US63986875A | 1975-12-11 | 1975-12-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1571999A true GB1571999A (en) | 1980-07-23 |
Family
ID=24565898
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB51668/76A Expired GB1571999A (en) | 1975-12-11 | 1976-12-10 | Semiconductors |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS597213B2 (enExample) |
| DE (1) | DE2655803C2 (enExample) |
| FR (1) | FR2335042A1 (enExample) |
| GB (1) | GB1571999A (enExample) |
| SE (1) | SE418432B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2558147B (en) * | 2015-11-05 | 2020-11-11 | Abb Schweiz Ag | Power semiconductor device and method for producing a power semiconductor device |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE418433B (sv) * | 1975-12-11 | 1981-05-25 | Gen Electric | Halvledarelement med ett skikt av ett polymert siloxan-innehallande membranmaterial med variabel permeabilitet anbringat pa utvalda ytomraden av elementet |
| GB1585477A (en) * | 1976-01-26 | 1981-03-04 | Gen Electric | Semiconductors |
| CH661932A5 (en) * | 1978-09-18 | 1987-08-31 | Gen Electric | Process for the preparation of a coating composition for semiconductor components, this composition, and the use thereof |
| CH661933A5 (en) * | 1978-09-18 | 1987-08-31 | Gen Electric | Process for the preparation of a coating composition for the surface of a semiconductor component, this composition, and the use thereof for preventing surface breakdown |
| JPH0395021U (enExample) * | 1990-01-16 | 1991-09-27 | ||
| DE19500235A1 (de) * | 1995-01-05 | 1996-07-11 | Roth Technik Gmbh | Abdeckschicht für elektrische Leiter oder Halbleiter |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1464602B2 (de) * | 1962-11-30 | 1970-11-26 | Fuji Denki Seizo K.K., Tokio | Verfahren zur Oberflächenbehandlung ..on Halbleiteranordnungen |
| US3615913A (en) * | 1968-11-08 | 1971-10-26 | Westinghouse Electric Corp | Polyimide and polyamide-polyimide as a semiconductor surface passivator and protectant coating |
| US3553282A (en) * | 1969-09-08 | 1971-01-05 | Gen Electric | Siloxane containing polyamide acid blends |
| US3598784A (en) * | 1970-03-11 | 1971-08-10 | Gen Electric | Polysiloxane amides |
| US3740305A (en) * | 1971-10-01 | 1973-06-19 | Gen Electric | Composite materials bonded with siloxane containing polyimides |
| JPS5421073B2 (enExample) * | 1974-04-15 | 1979-07-27 |
-
1976
- 1976-12-09 DE DE2655803A patent/DE2655803C2/de not_active Expired
- 1976-12-09 SE SE7613875A patent/SE418432B/xx not_active IP Right Cessation
- 1976-12-10 JP JP51149313A patent/JPS597213B2/ja not_active Expired
- 1976-12-10 GB GB51668/76A patent/GB1571999A/en not_active Expired
- 1976-12-10 FR FR7637216A patent/FR2335042A1/fr active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2558147B (en) * | 2015-11-05 | 2020-11-11 | Abb Schweiz Ag | Power semiconductor device and method for producing a power semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2655803C2 (de) | 1986-04-17 |
| DE2655803A1 (de) | 1977-06-16 |
| SE418432B (sv) | 1981-05-25 |
| JPS597213B2 (ja) | 1984-02-17 |
| FR2335042A1 (fr) | 1977-07-08 |
| SE7613875L (sv) | 1977-06-12 |
| JPS5272578A (en) | 1977-06-17 |
| FR2335042B1 (enExample) | 1982-10-29 |
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| GB1571999A (en) | Semiconductors | |
| US4331970A (en) | Use of dispersed solids as fillers in polymeric materials to provide material for semiconductor junction passivation | |
| US4652598A (en) | Siloxane-containing polymers | |
| KR840000527B1 (ko) | 실리콘 공중합물의 전구(前驅)용액 및 이의 처리방법 | |
| JPS584816B2 (ja) | 半導体素子とその製法 | |
| JPS5813088B2 (ja) | シロキサン変性ポリイミド前駆体の製造法 | |
| JPS6046542B2 (ja) | 半導体素子 | |
| JPH0259622B2 (enExample) | ||
| JPS5921165B2 (ja) | 半導体素子 | |
| GB1585477A (en) | Semiconductors | |
| CA1265279A (en) | Heat curable silicone polyimide compositions | |
| EP0202259B1 (en) | Siloxane-containing polymers | |
| JPS5835368B2 (ja) | 半導体装置及びその表面被覆組成物 | |
| JPS6058582B2 (ja) | 半導体素子のパツシベ−シヨン方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| 746 | Register noted 'licences of right' (sect. 46/1977) | ||
| PCNP | Patent ceased through non-payment of renewal fee |