DE2644638C2 - - Google Patents

Info

Publication number
DE2644638C2
DE2644638C2 DE2644638A DE2644638A DE2644638C2 DE 2644638 C2 DE2644638 C2 DE 2644638C2 DE 2644638 A DE2644638 A DE 2644638A DE 2644638 A DE2644638 A DE 2644638A DE 2644638 C2 DE2644638 C2 DE 2644638C2
Authority
DE
Germany
Prior art keywords
region
layer
semiconductor
pressure sensor
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2644638A
Other languages
German (de)
English (en)
Other versions
DE2644638A1 (de
Inventor
James F. St. Paul Minn. Us Marshall
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Publication of DE2644638A1 publication Critical patent/DE2644638A1/de
Application granted granted Critical
Publication of DE2644638C2 publication Critical patent/DE2644638C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R23/00—Transducers other than those covered by groups H04R9/00 - H04R21/00
    • H04R23/006—Transducers other than those covered by groups H04R9/00 - H04R21/00 using solid state devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
    • G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
DE19762644638 1975-10-06 1976-10-02 Verfahren zur herstellung eines halbleiter-druckfuehlers sowie nach diesem verfahren hergestellter druckfuehler Granted DE2644638A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US61986675A 1975-10-06 1975-10-06

Publications (2)

Publication Number Publication Date
DE2644638A1 DE2644638A1 (de) 1977-04-07
DE2644638C2 true DE2644638C2 (https=) 1988-01-21

Family

ID=24483643

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19762644638 Granted DE2644638A1 (de) 1975-10-06 1976-10-02 Verfahren zur herstellung eines halbleiter-druckfuehlers sowie nach diesem verfahren hergestellter druckfuehler

Country Status (7)

Country Link
JP (1) JPS6032993B2 (https=)
CA (1) CA1088664A (https=)
DE (1) DE2644638A1 (https=)
FR (1) FR2327528A1 (https=)
GB (1) GB1558815A (https=)
IT (1) IT1073874B (https=)
SE (1) SE414096B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19602442A1 (de) * 1995-01-30 1996-08-01 Hitachi Ltd Halbleiter-Verbundsensor

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2844459A1 (de) * 1978-10-12 1980-04-24 Wacker Chemie Gmbh Verfahren zum erhoehen des schuettgewichts von siliciumdioxyd und eine verwendung des erfindungsgemaess behandelten siliciumdioxyds
JPS55102277A (en) * 1979-01-29 1980-08-05 Toshiba Corp Semiconductor pressure converter
JPS55112864U (https=) 1979-02-02 1980-08-08
JPS59117271A (ja) * 1982-12-24 1984-07-06 Hitachi Ltd 圧力感知素子を有する半導体装置とその製造法
JPS59136977A (ja) * 1983-01-26 1984-08-06 Hitachi Ltd 圧力感知半導体装置とその製造法
US6056888A (en) * 1999-04-19 2000-05-02 Motorola, Inc. Electronic component and method of manufacture
DE102011006332A1 (de) * 2011-03-29 2012-10-04 Robert Bosch Gmbh Verfahren zum Erzeugen von monokristallinen Piezowiderständen

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3819431A (en) * 1971-10-05 1974-06-25 Kulite Semiconductor Products Method of making transducers employing integral protective coatings and supports
GB1399988A (en) * 1972-10-02 1975-07-02 Motorola Inc Silicon pressure sensor
GB1362616A (en) * 1973-03-21 1974-08-07 Welwyn Electric Ltd Semiconductor strain measuring device
US3902926A (en) * 1974-02-21 1975-09-02 Signetics Corp Method of making an ion implanted resistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19602442A1 (de) * 1995-01-30 1996-08-01 Hitachi Ltd Halbleiter-Verbundsensor
DE19602442C2 (de) * 1995-01-30 2002-06-06 Hitachi Ltd Halbleiter-Verbundsensor

Also Published As

Publication number Publication date
SE7611020L (sv) 1977-04-07
JPS5245986A (en) 1977-04-12
JPS6032993B2 (ja) 1985-07-31
GB1558815A (en) 1980-01-09
FR2327528B1 (https=) 1982-05-21
DE2644638A1 (de) 1977-04-07
CA1088664A (en) 1980-10-28
FR2327528A1 (fr) 1977-05-06
IT1073874B (it) 1985-04-17
SE414096B (sv) 1980-07-07

Similar Documents

Publication Publication Date Title
DE2921971C2 (de) Verfahren zur Herstellung einer Schottky-Diode
DE2812740A1 (de) Verfahren zum herstellen einer vertikalen, bipolaren integrierten schaltung
DE2160427C3 (https=)
DE2707693C3 (de) Verfahren zum Herstellen von dotierten Zonen einer bestimmten Leitungsart in einem Halbleitersubstrat mittels Ionenimplantation
DE4019821A1 (de) Halbleiterbeschleunigungsmesser und verfahren zu dessen herstellung
DE3345988A1 (de) Halbleitervorrichtung mit einem druckfuehler sowie verfahren zu ihrer herstellung
DE2641752B2 (de) Verfahren zur Herstellung eines Feldeffekttransistors
DE1246890B (de) Diffusionsverfahren zum Herstellen eines Halbleiterbauelements
DE19605633A1 (de) Verfahren zur Herstellung von Dioden mit verbesserter Durchbruchspannungscharakteristik
DE3402629A1 (de) Verfahren zur herstellung einer halbleitereinrichtung
DE2916426A1 (de) Halbleiteranordnung
DE1024640B (de) Verfahren zur Herstellung von Kristalloden
DE69734456T2 (de) Ein stabilisierter polysiliziumwiderstand und seine herstellungsmethode
DE2642770A1 (de) Herstellung von halbleiteranordnungen
DE2644638C2 (https=)
DE3131991C2 (de) Verfahren zum Herstellen einer Zenerdiode
DE4244115C2 (de) Halbleitervorrichtung und Verfahren zum Herstellen der Halbleitervorrichtung
EP0062725B1 (de) Verfahren zum Herstellen eines integrierten Planartransistors
DE2702451B2 (de) Halbleiteranordnung
DE102008007222A1 (de) Halbleitervorrichtung mit Störstellen dotiertem Widerstandselement
DE2658304C2 (de) Halbleitervorrichtung
EP0226739B1 (de) Strukturierte Halbleiterkörper
DE69309274T2 (de) Verfahren zur herstellung eines eine integrierte halbleiterschaltung und eine selbsttragende mikrostruktur enthaltenden monolithischen chip
EP1050076A1 (de) Verfahren zur herstellung von dioden
DE10259292B4 (de) Verfahren zum Herstellen eines gleichmäßigen Kontaktes und damit hergestellter gleichmäßiger Kontakt

Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition