IT1073874B - Dispositivo a semiconduttore rivelatore di sollecitazioni e procedimento di produzione - Google Patents

Dispositivo a semiconduttore rivelatore di sollecitazioni e procedimento di produzione

Info

Publication number
IT1073874B
IT1073874B IT5161176A IT5161176A IT1073874B IT 1073874 B IT1073874 B IT 1073874B IT 5161176 A IT5161176 A IT 5161176A IT 5161176 A IT5161176 A IT 5161176A IT 1073874 B IT1073874 B IT 1073874B
Authority
IT
Italy
Prior art keywords
stresses
semiconductor device
production process
device detector
detector
Prior art date
Application number
IT5161176A
Other languages
English (en)
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Application granted granted Critical
Publication of IT1073874B publication Critical patent/IT1073874B/it

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R23/00Transducers other than those covered by groups H04R9/00 - H04R21/00
    • H04R23/006Transducers other than those covered by groups H04R9/00 - H04R21/00 using solid state devices
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/20Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2287Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
    • G01L1/2293Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Signal Processing (AREA)
  • Ceramic Engineering (AREA)
  • Acoustics & Sound (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
IT5161176A 1975-10-06 1976-10-06 Dispositivo a semiconduttore rivelatore di sollecitazioni e procedimento di produzione IT1073874B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US61986675A 1975-10-06 1975-10-06

Publications (1)

Publication Number Publication Date
IT1073874B true IT1073874B (it) 1985-04-17

Family

ID=24483643

Family Applications (1)

Application Number Title Priority Date Filing Date
IT5161176A IT1073874B (it) 1975-10-06 1976-10-06 Dispositivo a semiconduttore rivelatore di sollecitazioni e procedimento di produzione

Country Status (7)

Country Link
JP (1) JPS6032993B2 (it)
CA (1) CA1088664A (it)
DE (1) DE2644638A1 (it)
FR (1) FR2327528A1 (it)
GB (1) GB1558815A (it)
IT (1) IT1073874B (it)
SE (1) SE414096B (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2844459A1 (de) * 1978-10-12 1980-04-24 Wacker Chemie Gmbh Verfahren zum erhoehen des schuettgewichts von siliciumdioxyd und eine verwendung des erfindungsgemaess behandelten siliciumdioxyds
JPS55102277A (en) * 1979-01-29 1980-08-05 Toshiba Corp Semiconductor pressure converter
JPS55112864U (it) * 1979-02-02 1980-08-08
JPS59117271A (ja) * 1982-12-24 1984-07-06 Hitachi Ltd 圧力感知素子を有する半導体装置とその製造法
JPS59136977A (ja) * 1983-01-26 1984-08-06 Hitachi Ltd 圧力感知半導体装置とその製造法
JP3344138B2 (ja) 1995-01-30 2002-11-11 株式会社日立製作所 半導体複合センサ
US6056888A (en) * 1999-04-19 2000-05-02 Motorola, Inc. Electronic component and method of manufacture
DE102011006332A1 (de) * 2011-03-29 2012-10-04 Robert Bosch Gmbh Verfahren zum Erzeugen von monokristallinen Piezowiderständen

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3819431A (en) * 1971-10-05 1974-06-25 Kulite Semiconductor Products Method of making transducers employing integral protective coatings and supports
GB1399988A (en) * 1972-10-02 1975-07-02 Motorola Inc Silicon pressure sensor
GB1362616A (en) * 1973-03-21 1974-08-07 Welwyn Electric Ltd Semiconductor strain measuring device
US3902926A (en) * 1974-02-21 1975-09-02 Signetics Corp Method of making an ion implanted resistor

Also Published As

Publication number Publication date
JPS6032993B2 (ja) 1985-07-31
FR2327528A1 (fr) 1977-05-06
SE7611020L (sv) 1977-04-07
FR2327528B1 (it) 1982-05-21
JPS5245986A (en) 1977-04-12
SE414096B (sv) 1980-07-07
DE2644638C2 (it) 1988-01-21
CA1088664A (en) 1980-10-28
GB1558815A (en) 1980-01-09
DE2644638A1 (de) 1977-04-07

Similar Documents

Publication Publication Date Title
GB1543235A (en) Methods of manufacturing semiconductor devices
GB1550645A (en) Methods of manufacturing semiconductor devices
JPS51135385A (en) Method of producing semiconductor device
JPS5264279A (en) Method of manufacturing semiconductor element
FR2309036A1 (fr) Dispositif semiconducteur et son procede de fabrication
IT1058674B (it) Metodo di fabbricazione di un dispositivo semiconduttore
JPS526088A (en) Method of producing semiconductor device
SE407719B (sv) Metod for framstellning av en halvledaranordning
NO140182C (no) Fremgangsmaate og anordning for fremstilling av glass
JPS5279668A (en) Method of producing semiconductor device
JPS5260579A (en) Method of producing semiconductor device
SE420354B (sv) Forfarande for teknisk framstellning av forbeskiktade objektplattor
SE429038B (sv) Anordning for stegvis tillverkning av somlosa burkar
JPS5239377A (en) Method of manufacturing semiconductor device
JPS5259583A (en) Method of manufacturing semiconductor element
JPS5234682A (en) Semiconductor device and method of producing same
IT1061277B (it) Procedimento ed impianto per la produzione di organosilossani
IT1073874B (it) Dispositivo a semiconduttore rivelatore di sollecitazioni e procedimento di produzione
GB1552021A (en) Method of producing semiconductor device
JPS5226190A (en) Semiconductor device and method of producing same
GB1543737A (en) Method of manufacturing a semiconductor device
JPS5228266A (en) Semiconductor element and method of manufacture thereof
IT1058452B (it) Calzatura nonche procedimento e dispositivo per la produzione della medesima
SE7613232L (sv) Forfarande for tillverkning av halvledaranordningar
JPS51121274A (en) Semiconductor device and method of producing same

Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19951026