FR2327528A1 - Detecteur de contrainte et procede pour sa fabrication - Google Patents

Detecteur de contrainte et procede pour sa fabrication

Info

Publication number
FR2327528A1
FR2327528A1 FR7629945A FR7629945A FR2327528A1 FR 2327528 A1 FR2327528 A1 FR 2327528A1 FR 7629945 A FR7629945 A FR 7629945A FR 7629945 A FR7629945 A FR 7629945A FR 2327528 A1 FR2327528 A1 FR 2327528A1
Authority
FR
France
Prior art keywords
manufacturing
stress detector
stress
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7629945A
Other languages
English (en)
Other versions
FR2327528B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Publication of FR2327528A1 publication Critical patent/FR2327528A1/fr
Application granted granted Critical
Publication of FR2327528B1 publication Critical patent/FR2327528B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R23/00—Transducers other than those covered by groups H04R9/00 - H04R21/00
    • H04R23/006—Transducers other than those covered by groups H04R9/00 - H04R21/00 using solid state devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
    • G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
FR7629945A 1975-10-06 1976-10-05 Detecteur de contrainte et procede pour sa fabrication Granted FR2327528A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US61986675A 1975-10-06 1975-10-06

Publications (2)

Publication Number Publication Date
FR2327528A1 true FR2327528A1 (fr) 1977-05-06
FR2327528B1 FR2327528B1 (fr) 1982-05-21

Family

ID=24483643

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7629945A Granted FR2327528A1 (fr) 1975-10-06 1976-10-05 Detecteur de contrainte et procede pour sa fabrication

Country Status (7)

Country Link
JP (1) JPS6032993B2 (fr)
CA (1) CA1088664A (fr)
DE (1) DE2644638A1 (fr)
FR (1) FR2327528A1 (fr)
GB (1) GB1558815A (fr)
IT (1) IT1073874B (fr)
SE (1) SE414096B (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2844459A1 (de) * 1978-10-12 1980-04-24 Wacker Chemie Gmbh Verfahren zum erhoehen des schuettgewichts von siliciumdioxyd und eine verwendung des erfindungsgemaess behandelten siliciumdioxyds
JPS55102277A (en) * 1979-01-29 1980-08-05 Toshiba Corp Semiconductor pressure converter
JPS55112864U (fr) * 1979-02-02 1980-08-08
JPS59117271A (ja) * 1982-12-24 1984-07-06 Hitachi Ltd 圧力感知素子を有する半導体装置とその製造法
JPS59136977A (ja) * 1983-01-26 1984-08-06 Hitachi Ltd 圧力感知半導体装置とその製造法
JP3344138B2 (ja) * 1995-01-30 2002-11-11 株式会社日立製作所 半導体複合センサ
US6056888A (en) * 1999-04-19 2000-05-02 Motorola, Inc. Electronic component and method of manufacture
DE102011006332A1 (de) 2011-03-29 2012-10-04 Robert Bosch Gmbh Verfahren zum Erzeugen von monokristallinen Piezowiderständen

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2201464A1 (fr) * 1972-10-02 1974-04-26 Motorola Inc
US3819431A (en) * 1971-10-05 1974-06-25 Kulite Semiconductor Products Method of making transducers employing integral protective coatings and supports
GB1362616A (en) * 1973-03-21 1974-08-07 Welwyn Electric Ltd Semiconductor strain measuring device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3902926A (en) * 1974-02-21 1975-09-02 Signetics Corp Method of making an ion implanted resistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3819431A (en) * 1971-10-05 1974-06-25 Kulite Semiconductor Products Method of making transducers employing integral protective coatings and supports
FR2201464A1 (fr) * 1972-10-02 1974-04-26 Motorola Inc
GB1362616A (en) * 1973-03-21 1974-08-07 Welwyn Electric Ltd Semiconductor strain measuring device

Also Published As

Publication number Publication date
IT1073874B (it) 1985-04-17
FR2327528B1 (fr) 1982-05-21
SE414096B (sv) 1980-07-07
JPS6032993B2 (ja) 1985-07-31
DE2644638C2 (fr) 1988-01-21
JPS5245986A (en) 1977-04-12
SE7611020L (sv) 1977-04-07
DE2644638A1 (de) 1977-04-07
GB1558815A (en) 1980-01-09
CA1088664A (fr) 1980-10-28

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