IT1058674B - Metodo di fabbricazione di un dispositivo semiconduttore - Google Patents
Metodo di fabbricazione di un dispositivo semiconduttoreInfo
- Publication number
- IT1058674B IT1058674B IT21490/76A IT2149076A IT1058674B IT 1058674 B IT1058674 B IT 1058674B IT 21490/76 A IT21490/76 A IT 21490/76A IT 2149076 A IT2149076 A IT 2149076A IT 1058674 B IT1058674 B IT 1058674B
- Authority
- IT
- Italy
- Prior art keywords
- manufacture
- semiconductive device
- semiconductive
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/033—Diffusion of aluminum
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/92—Controlling diffusion profile by oxidation
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB12649/75A GB1536545A (en) | 1975-03-26 | 1975-03-26 | Semiconductor device manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1058674B true IT1058674B (it) | 1982-05-10 |
Family
ID=10008581
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT21490/76A IT1058674B (it) | 1975-03-26 | 1976-03-23 | Metodo di fabbricazione di un dispositivo semiconduttore |
Country Status (12)
Country | Link |
---|---|
US (1) | US4040878A (it) |
JP (1) | JPS51120184A (it) |
AU (1) | AU497599B2 (it) |
BE (1) | BE839972A (it) |
CA (1) | CA1048161A (it) |
CH (1) | CH607327A5 (it) |
DE (1) | DE2611363C2 (it) |
FR (1) | FR2305852A1 (it) |
GB (1) | GB1536545A (it) |
IT (1) | IT1058674B (it) |
NL (1) | NL7602960A (it) |
SE (1) | SE404568B (it) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS522165A (en) * | 1975-06-23 | 1977-01-08 | Mitsubishi Electric Corp | Method of thermally diffusing selectively aluminum of semiconductor su bstrate |
US4063272A (en) * | 1975-11-26 | 1977-12-13 | General Electric Company | Semiconductor device and method of manufacture thereof |
US4099997A (en) * | 1976-06-21 | 1978-07-11 | Rca Corporation | Method of fabricating a semiconductor device |
JPS5816333B2 (ja) * | 1976-12-10 | 1983-03-30 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JPS53118367A (en) * | 1977-03-25 | 1978-10-16 | Hitachi Ltd | Manufacture of semiconductor |
JPS5833693B2 (ja) * | 1977-08-12 | 1983-07-21 | 株式会社日立製作所 | 半導体装置の製造方法 |
CH632356A5 (de) * | 1977-12-15 | 1982-09-30 | Bbc Brown Boveri & Cie | Verfahren zur herstellung von metallmustern auf siliziumscheiben fuer die thermomigration. |
JPS5494869A (en) * | 1978-01-11 | 1979-07-26 | Hitachi Ltd | Production of semiconductor device |
JPS553618A (en) * | 1978-06-21 | 1980-01-11 | Hitachi Ltd | Manufacturing method for semiconductor device |
JPS5536913A (en) * | 1978-09-04 | 1980-03-14 | Hitachi Ltd | Semiconductor device |
US4188245A (en) * | 1978-09-18 | 1980-02-12 | General Electric Company | Selective open tube aluminum diffusion |
US4199386A (en) * | 1978-11-28 | 1980-04-22 | Rca Corporation | Method of diffusing aluminum into monocrystalline silicon |
US4239560A (en) * | 1979-05-21 | 1980-12-16 | General Electric Company | Open tube aluminum oxide disc diffusion |
US4677456A (en) * | 1979-05-25 | 1987-06-30 | Raytheon Company | Semiconductor structure and manufacturing method |
JPS5824007B2 (ja) * | 1979-07-16 | 1983-05-18 | 株式会社日立製作所 | 半導体装置の製造方法 |
JPS5824006B2 (ja) * | 1980-01-30 | 1983-05-18 | 株式会社日立製作所 | 不純物拡散法 |
NL8006668A (nl) * | 1980-12-09 | 1982-07-01 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
JPS58122724A (ja) * | 1982-01-18 | 1983-07-21 | Toshiba Corp | 半導体素子の製造方法 |
JP2886183B2 (ja) * | 1988-06-28 | 1999-04-26 | 三菱電機株式会社 | フィールド分離絶縁膜の製造方法 |
US5036377A (en) * | 1988-08-03 | 1991-07-30 | Texas Instruments Incorporated | Triac array |
GB2237929A (en) * | 1989-10-23 | 1991-05-15 | Philips Electronic Associated | A method of manufacturing a semiconductor device |
US20040061170A1 (en) * | 1995-07-31 | 2004-04-01 | Ixys Corporation | Reverse blocking IGBT |
US5698454A (en) * | 1995-07-31 | 1997-12-16 | Ixys Corporation | Method of making a reverse blocking IGBT |
US6727527B1 (en) | 1995-07-31 | 2004-04-27 | Ixys Corporation | Reverse blocking IGBT |
EP0893821A1 (en) * | 1997-07-21 | 1999-01-27 | STMicroelectronics S.r.l. | Process for the manufacturing of a DMOS-technology transistor providing for a single thermal process for the formation of source and body regions |
GB9919764D0 (en) | 1999-08-21 | 1999-10-27 | Koninkl Philips Electronics Nv | Thyristors and their manufacture |
DE10159498A1 (de) * | 2001-12-04 | 2003-06-12 | Bosch Gmbh Robert | Halbleiteranordnung mit einem pn-Übergang und Verfahren zur Herstellung einer Halbleiteranordnung |
JP4222092B2 (ja) * | 2003-05-07 | 2009-02-12 | 富士電機デバイステクノロジー株式会社 | 半導体ウェハ、半導体装置および半導体装置の製造方法 |
US7326596B2 (en) | 2004-04-26 | 2008-02-05 | Ixys Corporation | High voltage power device with low diffusion pipe resistance |
DE102006041424A1 (de) * | 2006-09-04 | 2008-03-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur simultanen Dotierung und Oxidation von Halbleitersubstraten und dessen Verwendung |
US9590033B1 (en) | 2015-11-20 | 2017-03-07 | Ixys Corporation | Trench separation diffusion for high voltage device |
US9704832B1 (en) | 2016-02-29 | 2017-07-11 | Ixys Corporation | Die stack assembly using an edge separation structure for connectivity through a die of the stack |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1414898A1 (de) * | 1960-11-09 | 1969-01-09 | Lucas Industries Ltd | Verfahren zur Herstellung von Halbleitern |
GB1031451A (en) * | 1961-08-03 | 1966-06-02 | Lucas Industries Ltd | Controlled rectifiers |
US3574009A (en) * | 1968-03-06 | 1971-04-06 | Unitrode Corp | Controlled doping of semiconductors |
US3628106A (en) * | 1969-05-05 | 1971-12-14 | Gen Electric | Passivated semiconductor device with protective peripheral junction portion |
US3628107A (en) * | 1969-05-05 | 1971-12-14 | Gen Electric | Passivated semiconductor device with peripheral protective junction |
US3664894A (en) * | 1970-02-24 | 1972-05-23 | Rca Corp | Method of manufacturing semiconductor devices having high planar junction breakdown voltage |
US3979230A (en) * | 1973-10-30 | 1976-09-07 | General Electric Company | Method of making isolation grids in bodies of semiconductor material |
US3904442A (en) * | 1973-10-30 | 1975-09-09 | Gen Electric | Method of making isolation grids in bodies of semiconductor material |
US3933541A (en) * | 1974-01-22 | 1976-01-20 | Mitsubishi Denki Kabushiki Kaisha | Process of producing semiconductor planar device |
US3914138A (en) * | 1974-08-16 | 1975-10-21 | Westinghouse Electric Corp | Method of making semiconductor devices by single step diffusion |
DE2506436C3 (de) * | 1975-02-15 | 1980-05-14 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Diffusionsverfahren zum Herstellen aluminiumdotierter Isolationszonen für Halbleiterbauelemente |
-
1975
- 1975-03-26 GB GB12649/75A patent/GB1536545A/en not_active Expired
-
1976
- 1976-03-16 CA CA248,047A patent/CA1048161A/en not_active Expired
- 1976-03-18 DE DE2611363A patent/DE2611363C2/de not_active Expired
- 1976-03-22 US US05/668,946 patent/US4040878A/en not_active Expired - Lifetime
- 1976-03-22 NL NL7602960A patent/NL7602960A/xx not_active Application Discontinuation
- 1976-03-23 JP JP51030909A patent/JPS51120184A/ja active Granted
- 1976-03-23 SE SE7603557A patent/SE404568B/xx not_active IP Right Cessation
- 1976-03-23 IT IT21490/76A patent/IT1058674B/it active
- 1976-03-23 CH CH363376A patent/CH607327A5/xx not_active IP Right Cessation
- 1976-03-24 BE BE165513A patent/BE839972A/xx unknown
- 1976-03-24 AU AU12282/76A patent/AU497599B2/en not_active Expired
- 1976-03-26 FR FR7608865A patent/FR2305852A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
GB1536545A (en) | 1978-12-20 |
US4040878A (en) | 1977-08-09 |
FR2305852B1 (it) | 1982-10-01 |
FR2305852A1 (fr) | 1976-10-22 |
JPS51120184A (en) | 1976-10-21 |
SE404568B (sv) | 1978-10-09 |
BE839972A (fr) | 1976-09-24 |
AU1228276A (en) | 1977-09-29 |
JPS54371B2 (it) | 1979-01-10 |
AU497599B2 (en) | 1978-12-21 |
CA1048161A (en) | 1979-02-06 |
DE2611363C2 (de) | 1983-03-31 |
SE7603557L (sv) | 1976-09-27 |
CH607327A5 (it) | 1978-12-15 |
DE2611363A1 (de) | 1976-10-07 |
NL7602960A (nl) | 1976-09-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19940331 |