IT1042598B - Metodo di fabbricazione di un dispositivo presentante un disegno di conduttori - Google Patents

Metodo di fabbricazione di un dispositivo presentante un disegno di conduttori

Info

Publication number
IT1042598B
IT1042598B IT27292/75A IT2729275A IT1042598B IT 1042598 B IT1042598 B IT 1042598B IT 27292/75 A IT27292/75 A IT 27292/75A IT 2729275 A IT2729275 A IT 2729275A IT 1042598 B IT1042598 B IT 1042598B
Authority
IT
Italy
Prior art keywords
conductors
manufacture
device presenting
presenting
Prior art date
Application number
IT27292/75A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of IT1042598B publication Critical patent/IT1042598B/it

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
    • H05K3/046—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
    • H05K3/048—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer using a lift-off resist pattern or a release layer pattern
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/907—Continuous processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/944—Shadow
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/951—Lift-off

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Weting (AREA)
IT27292/75A 1974-09-19 1975-09-16 Metodo di fabbricazione di un dispositivo presentante un disegno di conduttori IT1042598B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7412383A NL7412383A (nl) 1974-09-19 1974-09-19 Werkwijze voor het vervaardigen van een in- richting met een geleiderpatroon.

Publications (1)

Publication Number Publication Date
IT1042598B true IT1042598B (it) 1980-01-30

Family

ID=19822130

Family Applications (1)

Application Number Title Priority Date Filing Date
IT27292/75A IT1042598B (it) 1974-09-19 1975-09-16 Metodo di fabbricazione di un dispositivo presentante un disegno di conduttori

Country Status (10)

Country Link
US (1) US4353935A (it)
JP (1) JPS5157167A (it)
AU (1) AU505495B2 (it)
CA (1) CA1035469A (it)
CH (1) CH591800A5 (it)
DE (1) DE2540300C3 (it)
FR (1) FR2285785A1 (it)
GB (1) GB1514562A (it)
IT (1) IT1042598B (it)
NL (1) NL7412383A (it)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3029382A1 (de) * 1980-08-01 1982-03-04 Siemens AG, 1000 Berlin und 8000 München Aufbau von metallschichten und verfahren zur herstellung dieses aufbaus
US4407859A (en) * 1980-10-17 1983-10-04 Rockwell International Corporation Planar bubble memory circuit fabrication
DE3109801A1 (de) * 1981-03-13 1982-09-30 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von halbleiterbauelementen
CA1200624A (en) * 1981-08-10 1986-02-11 Susumu Muramoto Method for the manufacture of semiconductor device using refractory metal in a lift-off step
US4418095A (en) * 1982-03-26 1983-11-29 Sperry Corporation Method of making planarized Josephson junction devices
US4405658A (en) * 1982-03-26 1983-09-20 Sperry Corporation Method of producing positive slope step changes on vacuum deposited layers
US4486464A (en) * 1982-09-27 1984-12-04 Sperry Corporation Method of making planarizing non-conductive layers employing conductive metals
JPS60138940A (ja) * 1983-12-27 1985-07-23 Toshiba Corp 半導体装置の製造方法
US5089293A (en) * 1984-07-31 1992-02-18 Rosemount Inc. Method for forming a platinum resistance thermometer
CA1250155A (en) * 1984-07-31 1989-02-21 James A. Ruf Platinum resistance thermometer
FR2583220B1 (fr) * 1985-06-11 1987-08-07 Thomson Csf Procede de realisation d'au moins deux metallisations d'un composant semi-conducteur, recouvertes d'une couche de dielectrique et composant obtenu par ce dielectrique
US4687552A (en) * 1985-12-02 1987-08-18 Tektronix, Inc. Rhodium capped gold IC metallization
US4818712A (en) * 1987-10-13 1989-04-04 Northrop Corporation Aluminum liftoff masking process and product
JPH01161773A (ja) * 1987-12-18 1989-06-26 Agency Of Ind Science & Technol 化合物半導体装置の製造方法
US5130172A (en) * 1988-10-21 1992-07-14 The Regents Of The University Of California Low temperature organometallic deposition of metals
US5118584A (en) * 1990-06-01 1992-06-02 Eastman Kodak Company Method of producing microbump circuits for flip chip mounting
US5536677A (en) * 1994-12-01 1996-07-16 Motorola, Inc. Method of forming conductive bumps on a semiconductor device using a double mask structure
KR100329605B1 (ko) * 1995-09-25 2002-11-04 주식회사 하이닉스반도체 반도체소자의금속배선제조방법
KR0179116B1 (ko) * 1995-12-30 1999-03-20 구자홍 자가정렬형 티형 게이트 제조방법
JP3470623B2 (ja) * 1998-11-26 2003-11-25 ソニー株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法、半導体装置の製造方法および半導体装置
DE10050076C2 (de) * 2000-10-10 2003-09-18 Infineon Technologies Ag Verfahren zur Herstellung einer ferromagnetischen Struktur und ferromagnetisches Bauelement
DE10249207B4 (de) * 2002-10-22 2006-04-06 Infineon Technologies Ag Verfahren zur Herstellung eines ringförmigen Mikrostrukturelementes
JP5135879B2 (ja) * 2007-05-21 2013-02-06 富士電機株式会社 炭化珪素半導体装置の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3442701A (en) * 1965-05-19 1969-05-06 Bell Telephone Labor Inc Method of fabricating semiconductor contacts
US3498833A (en) * 1966-07-08 1970-03-03 Fairchild Camera Instr Co Double masking technique for integrated circuit
CH476398A (de) * 1968-03-01 1969-07-31 Ibm Verfahren zur Herstellung feiner geätzter Muster
US3567508A (en) * 1968-10-31 1971-03-02 Gen Electric Low temperature-high vacuum contact formation process
NL163370C (nl) * 1972-04-28 1980-08-15 Philips Nv Werkwijze voor het vervaardigen van een halfgeleider- inrichting met een geleiderpatroon.
US3873361A (en) * 1973-11-29 1975-03-25 Ibm Method of depositing thin film utilizing a lift-off mask
DE2432719B2 (de) * 1974-07-08 1977-06-02 Siemens AG, 1000 Berlin und 8000 München Verfahren zum erzeugen von feinen strukturen aus aufdampfbaren materialien auf einer unterlage und anwendung des verfahrens
US4004044A (en) * 1975-05-09 1977-01-18 International Business Machines Corporation Method for forming patterned films utilizing a transparent lift-off mask

Also Published As

Publication number Publication date
NL7412383A (nl) 1976-03-23
CA1035469A (en) 1978-07-25
GB1514562A (en) 1978-06-14
FR2285785B1 (it) 1980-04-30
US4353935A (en) 1982-10-12
FR2285785A1 (fr) 1976-04-16
DE2540300B2 (de) 1980-08-14
JPS5157167A (it) 1976-05-19
CH591800A5 (it) 1977-09-30
DE2540300C3 (de) 1981-05-21
DE2540300A1 (de) 1976-04-08
AU8489175A (en) 1977-03-24
AU505495B2 (en) 1979-11-22

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