SE7613232L - Forfarande for tillverkning av halvledaranordningar - Google Patents

Forfarande for tillverkning av halvledaranordningar

Info

Publication number
SE7613232L
SE7613232L SE7613232A SE7613232A SE7613232L SE 7613232 L SE7613232 L SE 7613232L SE 7613232 A SE7613232 A SE 7613232A SE 7613232 A SE7613232 A SE 7613232A SE 7613232 L SE7613232 L SE 7613232L
Authority
SE
Sweden
Prior art keywords
procedure
manufacture
semiconductor devices
semiconductor
devices
Prior art date
Application number
SE7613232A
Other languages
English (en)
Inventor
M F Chang
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of SE7613232L publication Critical patent/SE7613232L/sv

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Element Separation (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SE7613232A 1975-11-26 1976-11-25 Forfarande for tillverkning av halvledaranordningar SE7613232L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/635,327 US4042448A (en) 1975-11-26 1975-11-26 Post TGZM surface etch

Publications (1)

Publication Number Publication Date
SE7613232L true SE7613232L (sv) 1977-05-27

Family

ID=24547343

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7613232A SE7613232L (sv) 1975-11-26 1976-11-25 Forfarande for tillverkning av halvledaranordningar

Country Status (6)

Country Link
US (1) US4042448A (sv)
JP (1) JPS5275173A (sv)
DE (1) DE2653287A1 (sv)
FR (1) FR2333347A1 (sv)
GB (1) GB1557300A (sv)
SE (1) SE7613232L (sv)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4076559A (en) * 1977-03-18 1978-02-28 General Electric Company Temperature gradient zone melting through an oxide layer
US20040061170A1 (en) * 1995-07-31 2004-04-01 Ixys Corporation Reverse blocking IGBT
US6727527B1 (en) 1995-07-31 2004-04-27 Ixys Corporation Reverse blocking IGBT
US5698454A (en) * 1995-07-31 1997-12-16 Ixys Corporation Method of making a reverse blocking IGBT
FR2815470A1 (fr) * 2000-10-12 2002-04-19 St Microelectronics Sa Procede de fabrication de composants de puissance verticaux
US6936908B2 (en) 2001-05-03 2005-08-30 Ixys Corporation Forward and reverse blocking devices
US20040188385A1 (en) * 2003-03-26 2004-09-30 Kenji Yamada Etching agent composition for thin films having high permittivity and process for etching
DE102004021228B4 (de) * 2004-04-30 2009-01-08 Infineon Technologies Ag Verfahren zum Einbringen eines Grabens in einen Halbleiterkörper eines Kompensationsbauelementes

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3272748A (en) * 1964-06-29 1966-09-13 Western Electric Co Etching of silicon and germanium
US3379584A (en) * 1964-09-04 1968-04-23 Texas Instruments Inc Semiconductor wafer with at least one epitaxial layer and methods of making same
US3608186A (en) * 1969-10-30 1971-09-28 Jearld L Hutson Semiconductor device manufacture with junction passivation
US3706129A (en) * 1970-07-27 1972-12-19 Gen Electric Integrated semiconductor rectifiers and processes for their fabrication
DE2450902A1 (de) * 1973-10-30 1975-05-07 Gen Electric Elektrische durchfuehrungsleiter in halbleitervorrichtungen
US3901736A (en) * 1973-10-30 1975-08-26 Gen Electric Method of making deep diode devices
US3920482A (en) * 1974-03-13 1975-11-18 Signetics Corp Method for forming a semiconductor structure having islands isolated by adjacent moats

Also Published As

Publication number Publication date
GB1557300A (en) 1979-12-05
US4042448A (en) 1977-08-16
JPS5275173A (en) 1977-06-23
DE2653287A1 (de) 1977-06-08
FR2333347A1 (fr) 1977-06-24

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