DE2635456A1 - Vorrichtung zum aufrechterhalten des elektrischen potentials eines punktes eines elektronischen schaltkreises in einem bestimmten zustand - Google Patents

Vorrichtung zum aufrechterhalten des elektrischen potentials eines punktes eines elektronischen schaltkreises in einem bestimmten zustand

Info

Publication number
DE2635456A1
DE2635456A1 DE19762635456 DE2635456A DE2635456A1 DE 2635456 A1 DE2635456 A1 DE 2635456A1 DE 19762635456 DE19762635456 DE 19762635456 DE 2635456 A DE2635456 A DE 2635456A DE 2635456 A1 DE2635456 A1 DE 2635456A1
Authority
DE
Germany
Prior art keywords
transistor
control electrode
capacitor
igfet
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19762635456
Other languages
German (de)
English (en)
Inventor
Andreas Rusznyak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebauches SA
Original Assignee
Ebauches SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebauches SA filed Critical Ebauches SA
Publication of DE2635456A1 publication Critical patent/DE2635456A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G04—HOROLOGY
    • G04G—ELECTRONIC TIME-PIECES
    • G04G99/00—Subject matter not provided for in other groups of this subclass
    • G—PHYSICS
    • G04—HOROLOGY
    • G04G—ELECTRONIC TIME-PIECES
    • G04G19/00—Electric power supply circuits specially adapted for use in electronic time-pieces
    • G—PHYSICS
    • G04—HOROLOGY
    • G04G—ELECTRONIC TIME-PIECES
    • G04G99/00—Subject matter not provided for in other groups of this subclass
    • G04G99/003—Pulse shaping; Amplification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/096—Synchronous circuits, i.e. using clock signals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/02—Shaping pulses by amplifying
    • H03K5/023—Shaping pulses by amplifying using field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)
  • Manipulation Of Pulses (AREA)
  • Test And Diagnosis Of Digital Computers (AREA)
  • Protection Of Static Devices (AREA)
  • Elimination Of Static Electricity (AREA)
  • Amplifiers (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Read Only Memory (AREA)
DE19762635456 1975-08-08 1976-08-04 Vorrichtung zum aufrechterhalten des elektrischen potentials eines punktes eines elektronischen schaltkreises in einem bestimmten zustand Withdrawn DE2635456A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH1036375A CH609200B (fr) 1975-08-08 1975-08-08 Dispositif pour maintenir dans un etat determine le potentiel electrique d'un point d'un circuit electronique.
US71187976A 1976-08-05 1976-08-05

Publications (1)

Publication Number Publication Date
DE2635456A1 true DE2635456A1 (de) 1977-02-17

Family

ID=25706518

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19762635456 Withdrawn DE2635456A1 (de) 1975-08-08 1976-08-04 Vorrichtung zum aufrechterhalten des elektrischen potentials eines punktes eines elektronischen schaltkreises in einem bestimmten zustand

Country Status (7)

Country Link
US (1) US4110637A (enExample)
JP (1) JPS5237777A (enExample)
CH (1) CH609200B (enExample)
DE (1) DE2635456A1 (enExample)
FR (1) FR2320598A1 (enExample)
GB (1) GB1546682A (enExample)
NL (1) NL7608695A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4656367A (en) * 1985-10-18 1987-04-07 International Business Machines Corporation Speed up of up-going transition of TTL or DTL circuits under high _capacitive load
US5216290A (en) * 1988-10-19 1993-06-01 Texas Instruments, Incorporated Process of conserving charge and a boosting circuit in a high efficiency output buffer with NMOS output devices
IT1227561B (it) * 1988-11-07 1991-04-16 Sgs Thomson Microelectronics Dispositivo circuitale, a ridotto numero di componenti, per l'accensione simultanea di una pluralita' di transistori di potenza

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3576571A (en) * 1969-01-07 1971-04-27 North American Rockwell Memory circuit using storage capacitance and field effect devices
US3702926A (en) * 1970-09-30 1972-11-14 Ibm Fet decode circuit
US3699544A (en) * 1971-05-26 1972-10-17 Gen Electric Three transistor memory cell
US3744037A (en) * 1971-10-04 1973-07-03 North American Rockwell Two-clock memory cell
US3855581A (en) * 1971-12-30 1974-12-17 Mos Technology Inc Semiconductor device and circuits
US3798616A (en) * 1972-04-14 1974-03-19 North American Rockwell Strobe driver including a memory circuit
US3903431A (en) * 1973-12-28 1975-09-02 Teletype Corp Clocked dynamic inverter
SU488258A1 (ru) * 1974-02-07 1975-10-15 Предприятие П/Я Х-5885 Динамическа чейка пам ти
US3924247A (en) * 1974-08-21 1975-12-02 Rockwell International Corp Driver cell with memory and shift capability
US3943496A (en) * 1974-09-09 1976-03-09 Rockwell International Corporation Memory clocking system
US3922650A (en) * 1974-11-11 1975-11-25 Ncr Co Switched capacitor non-volatile mnos random access memory cell
US3988617A (en) * 1974-12-23 1976-10-26 International Business Machines Corporation Field effect transistor bias circuit

Also Published As

Publication number Publication date
CH609200B (fr)
FR2320598B1 (enExample) 1980-05-30
FR2320598A1 (fr) 1977-03-04
JPS5237777A (en) 1977-03-23
GB1546682A (en) 1979-05-31
CH609200GA3 (enExample) 1979-02-28
US4110637A (en) 1978-08-29
NL7608695A (nl) 1977-02-10

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Legal Events

Date Code Title Description
8139 Disposal/non-payment of the annual fee