DE2633869C2 - Verfahren zum Verbinden von Kupfer mit einem Substrat aus Keramikmaterial - Google Patents

Verfahren zum Verbinden von Kupfer mit einem Substrat aus Keramikmaterial

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Publication number
DE2633869C2
DE2633869C2 DE2633869A DE2633869A DE2633869C2 DE 2633869 C2 DE2633869 C2 DE 2633869C2 DE 2633869 A DE2633869 A DE 2633869A DE 2633869 A DE2633869 A DE 2633869A DE 2633869 C2 DE2633869 C2 DE 2633869C2
Authority
DE
Germany
Prior art keywords
copper
substrate
layer
eutectic
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2633869A
Other languages
German (de)
English (en)
Other versions
DE2633869A1 (de
Inventor
Dominic Anthony Schenectady N.Y. Cusano
James Anthony Scotia N.Y. Loughran
Yen-Sheng Edmund Auburn N.Y. Sun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/600,300 external-priority patent/US3994430A/en
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE2633869A1 publication Critical patent/DE2633869A1/de
Application granted granted Critical
Publication of DE2633869C2 publication Critical patent/DE2633869C2/de
Expired legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/14—Soldering, e.g. brazing, or unsoldering specially adapted for soldering seams
    • B23K1/18—Soldering, e.g. brazing, or unsoldering specially adapted for soldering seams circumferential seams, e.g. of shells
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/19—Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K31/00—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups
    • B23K31/02—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups relating to soldering or welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/001—Interlayers, transition pieces for metallurgical bonding of workpieces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
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    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
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    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0335—Layered conductors or foils
    • H05K2201/0355—Metal foils
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
    • H05K3/202—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern using self-supporting metal foil pattern

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Products (AREA)
  • Laminated Bodies (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Die Bonding (AREA)
DE2633869A 1975-07-30 1976-07-28 Verfahren zum Verbinden von Kupfer mit einem Substrat aus Keramikmaterial Expired DE2633869C2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/600,300 US3994430A (en) 1975-07-30 1975-07-30 Direct bonding of metals to ceramics and metals
US05/696,899 US4129243A (en) 1975-07-30 1976-06-17 Double side cooled, pressure mounted semiconductor package and process for the manufacture thereof

Publications (2)

Publication Number Publication Date
DE2633869A1 DE2633869A1 (de) 1977-02-17
DE2633869C2 true DE2633869C2 (de) 1985-09-05

Family

ID=27083564

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2633869A Expired DE2633869C2 (de) 1975-07-30 1976-07-28 Verfahren zum Verbinden von Kupfer mit einem Substrat aus Keramikmaterial

Country Status (8)

Country Link
US (1) US4129243A (enExample)
JP (2) JPS604154B2 (enExample)
DE (1) DE2633869C2 (enExample)
FR (1) FR2319600A1 (enExample)
GB (1) GB1559590A (enExample)
MX (1) MX3498E (enExample)
NL (1) NL179645C (enExample)
SE (1) SE426580B (enExample)

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DE3626232A1 (de) * 1986-08-02 1988-03-10 Akyuerek Susanne Verfahren zur herstellung einer leiterplatte
DE3701108A1 (de) * 1987-01-16 1988-07-28 Akyuerek Altan Verfahren zum verbinden zweier metallteile

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FR2493043B1 (fr) * 1980-10-23 1987-01-16 Silicium Semiconducteur Ssc Montage sans alliage d'un composant semi-conducteur de puissance en boitier presse
JPS5792585A (en) * 1980-11-27 1982-06-09 Ngk Spark Plug Co Method of bonding ceramics and metal plate
JPS57100737A (en) * 1980-12-16 1982-06-23 Toshiba Corp Semiconductor device
US4408218A (en) * 1981-03-27 1983-10-04 Amp Incorporated Ceramic chip carrier with lead frame having removable rim
US4362902A (en) * 1981-03-27 1982-12-07 Amp Incorporated Ceramic chip carrier
DE3127458A1 (de) * 1981-07-11 1983-02-03 Brown, Boveri & Cie Ag, 6800 Mannheim Elektrische verbindungslasche fuer halbleiterbauelemente
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DE3147790A1 (de) * 1981-12-03 1983-06-09 Brown, Boveri & Cie Ag, 6800 Mannheim Leistungsmodul und verfahren zu seiner herstellung
DE3147789A1 (de) * 1981-12-03 1983-06-09 Brown, Boveri & Cie Ag, 6800 Mannheim Leistungsmodul und verfahren zu seiner herstellung
DE3204167A1 (de) * 1982-02-06 1983-08-11 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren zum direkten verbinden von metallstuecken mit oxidkeramiksubstraten
JPS58137285A (ja) * 1982-02-10 1983-08-15 株式会社日立製作所 金属板付セラミック基板の製造法
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JPS593077A (ja) * 1982-06-29 1984-01-09 株式会社東芝 セラミツク部材と金属との接合方法
DE3376829D1 (en) * 1982-06-29 1988-07-07 Toshiba Kk Method for directly bonding ceramic and metal members and laminated body of the same
JPS59190279A (ja) * 1983-04-13 1984-10-29 株式会社東芝 セラミツクス構造体及びその製造方法
DE3324661A1 (de) * 1983-07-08 1985-01-17 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren zum direkten verbinden von metall mit keramik
US4769744A (en) * 1983-08-04 1988-09-06 General Electric Company Semiconductor chip packages having solder layers of enhanced durability
FR2556132B1 (fr) * 1983-12-01 1987-05-07 Ceraver Procede d'assemblage d'un boitier d'un composant semi-conducteur
JPS60131873A (ja) * 1983-12-15 1985-07-13 株式会社東芝 セラミツクス−金属直接接合体およびその製造方法
JPH0785495B2 (ja) * 1985-03-18 1995-09-13 ティーディーケイ株式会社 酸化物セラミツク上の銅電極形成法
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JPH062386B2 (ja) * 1985-03-29 1994-01-12 株式会社東芝 セラミックス回路基板の製造方法
JPS61227035A (ja) * 1985-03-30 1986-10-09 株式会社東芝 セラミツクス回路基板
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DE3724995A1 (de) * 1987-02-26 1988-09-08 Radex Heraklith Verfahren zur herstellung eines verbundkoerpers und verbundkoerper selbst
JP2566142B2 (ja) * 1987-04-14 1996-12-25 昭和電工株式会社 回路形成方法
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US5032691A (en) * 1988-04-12 1991-07-16 Kaufman Lance R Electric circuit assembly with voltage isolation
US4902854A (en) * 1988-04-12 1990-02-20 Kaufman Lance R Hermetic direct bond circuit assembly
US4831723A (en) * 1988-04-12 1989-05-23 Kaufman Lance R Direct bond circuit assembly with crimped lead frame
US5070602A (en) * 1988-04-12 1991-12-10 Lance R. Kaufman Method of making a circuit assembly
US4879633A (en) * 1988-04-12 1989-11-07 Kaufman Lance R Direct bond circuit assembly with ground plane
US4924292A (en) * 1988-04-12 1990-05-08 Kaufman Lance R Direct bond circuit assembly with crimped lead frame
US4860164A (en) * 1988-09-01 1989-08-22 Kaufman Lance R Heat sink apparatus with electrically insulative intermediate conduit portion for coolant flow
JPH0272695A (ja) * 1988-09-07 1990-03-12 Toshiba Lighting & Technol Corp 混成集積回路
GB2225484A (en) * 1988-11-25 1990-05-30 Westinghouse Brake & Signal Semiconductor device assembly
DE3844264A1 (de) * 1988-12-30 1990-07-05 Akyuerek Altan Traegerkoerper fuer elektronische schaltungsstrukturen und verfahren zur herstellung eines solchen traegerkoerpers
US5100740A (en) * 1989-09-25 1992-03-31 General Electric Company Direct bonded symmetric-metallic-laminate/substrate structures
US5653379A (en) * 1989-12-18 1997-08-05 Texas Instruments Incorporated Clad metal substrate
US5241216A (en) * 1989-12-21 1993-08-31 General Electric Company Ceramic-to-conducting-lead hermetic seal
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US4996116A (en) * 1989-12-21 1991-02-26 General Electric Company Enhanced direct bond structure
US5164359A (en) * 1990-04-20 1992-11-17 Eaton Corporation Monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate
JP3011433B2 (ja) * 1990-05-25 2000-02-21 株式会社東芝 セラミックス回路基板の製造方法
US5139972A (en) * 1991-02-28 1992-08-18 General Electric Company Batch assembly of high density hermetic packages for power semiconductor chips
US5573692A (en) * 1991-03-11 1996-11-12 Philip Morris Incorporated Platinum heater for electrical smoking article having ohmic contact
CA2146123C (en) * 1992-10-20 2005-01-11 Janusz Kuzma Package and method of construction
US5402006A (en) * 1992-11-10 1995-03-28 Texas Instruments Incorporated Semiconductor device with enhanced adhesion between heat spreader and leads and plastic mold compound
DE4319848C2 (de) * 1993-06-03 1995-12-21 Schulz Harder Juergen Verfahren zum Herstellen eines Metall-Keramik-Substrates
EP0650193A3 (en) * 1993-10-25 1996-07-31 Toshiba Kk Semiconductor device and method for its production.
CA2140311A1 (en) * 1994-01-14 1995-07-15 Joseph P. Mennucci Multilayer laminate product and process
US5777259A (en) * 1994-01-14 1998-07-07 Brush Wellman Inc. Heat exchanger assembly and method for making the same
JP2918191B2 (ja) 1994-04-11 1999-07-12 同和鉱業株式会社 金属−セラミックス複合部材の製造方法
US5965193A (en) 1994-04-11 1999-10-12 Dowa Mining Co., Ltd. Process for preparing a ceramic electronic circuit board and process for preparing aluminum or aluminum alloy bonded ceramic material
US6022426A (en) * 1995-05-31 2000-02-08 Brush Wellman Inc. Multilayer laminate process
JP3849381B2 (ja) * 1999-12-20 2006-11-22 株式会社日立製作所 絶縁回路基板の製造方法
DE10148550B4 (de) * 2001-10-01 2007-03-29 Electrovac Ag Verfahren zum Herstellen von Metall-Keramik-Verbundmaterialien, insbesondere Metall-Keramik-Substraten
US7159757B2 (en) * 2002-09-26 2007-01-09 Dowa Mining Co., Ltd. Metal/ceramic bonding article and method for producing same
JP3935037B2 (ja) 2002-09-30 2007-06-20 Ｄｏｗａホールディングス株式会社 アルミニウム−セラミックス接合基板の製造方法
JP4500065B2 (ja) * 2004-02-19 2010-07-14 Ｄｏｗａホールディングス株式会社 アルミナ部材と銅電極との接合方法およびアルミナ部材と銅電極との接合体
US20070231590A1 (en) * 2006-03-31 2007-10-04 Stellar Industries Corp. Method of Bonding Metals to Ceramics
US20100132932A1 (en) * 2007-04-24 2010-06-03 Ceramtec Ag Method for producing a metalized component, corresponding component, and a substrate for supporting the component during metalization
DE102010007919B4 (de) 2010-02-12 2022-03-03 Rogers Germany Gmbh Verfahren zum Herstellen von Metall-Keramik-Substraten sowie nach diesem Verfahren hergestelltes Metall-Keramik-Substrat
DE102014104510B4 (de) * 2014-03-31 2019-02-07 Gottfried Wilhelm Leibniz Universität Hannover Verfahren zum Fügen und Einrichtung zum Fügen einer Anordnung unter Verwendung des Verfahrens
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JP6645281B2 (ja) * 2016-03-14 2020-02-14 三菱マテリアル株式会社 セラミックス／アルミニウム接合体の製造方法、及び、パワーモジュール用基板の製造方法
CN107819066B (zh) * 2017-10-26 2018-10-16 成都万士达瓷业有限公司 一种低氧铜烧结dbc半导体热电基片的生产方法
DE102018101198A1 (de) * 2018-01-19 2019-07-25 Osram Opto Semiconductors Gmbh Verfahren zum herstellen eines gehäusedeckels für ein laserbauelement und gehäusedeckel für ein laserbauelement sowie laserbauelement
JP7543635B2 (ja) * 2018-04-11 2024-09-03 Ａｇｃ株式会社 配線膜および配線膜の形成方法
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CN117457504B (zh) * 2023-12-22 2024-03-08 成都万士达瓷业有限公司 一种陶瓷封装表面覆铜的生产方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3626232A1 (de) * 1986-08-02 1988-03-10 Akyuerek Susanne Verfahren zur herstellung einer leiterplatte
DE3701108A1 (de) * 1987-01-16 1988-07-28 Akyuerek Altan Verfahren zum verbinden zweier metallteile

Also Published As

Publication number Publication date
NL179645B (nl) 1986-05-16
FR2319600A1 (fr) 1977-02-25
FR2319600B1 (enExample) 1982-08-20
JPH0427195B2 (enExample) 1992-05-11
JPH01308885A (ja) 1989-12-13
GB1559590A (en) 1980-01-23
NL7608549A (nl) 1977-02-01
SE426580B (sv) 1983-01-31
DE2633869A1 (de) 1977-02-17
NL179645C (nl) 1986-10-16
JPS5237914A (en) 1977-03-24
JPS604154B2 (ja) 1985-02-01
SE7608523L (sv) 1977-01-31
US4129243A (en) 1978-12-12
MX3498E (es) 1981-01-05

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